Tunneling electroresistance effects in epitaxial complex oxides on silicon
Abstract
Complex oxide-based ferroelectric tunnel junctions (FTJs) show excellent nonvolatile memory characteristics promising for emerging technology. However, integration of these epitaxially grown FTJs electrically with a silicon substrate remains challenging due to their incompatible lattice structures and poor electronic interfaces resulting from the direct synthesis techniques. Here, we present an epitaxial SrRuO3/PbZr0.2Ti0.8O3/SrRuO3 FTJ integrated electrically with a doped silicon substrate after a layer transfer process. The tunnel currents of the FTJ on silicon show a large tunneling electroresistance (~1×105%) effect, which is explained by a numerical FTJ model incorporating pinned dipoles at the interfaces. This proof of concept of the integration of functional oxide heterostructures with silicon opens a pathway to beyond-CMOS computing devices using unconventional materials.
- Authors:
-
[1];
[3];
[4]
- Univ. at Buffalo, NY (United States)
- Univ. of California, Berkeley, CA (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- US Department of the Navy, Office of Naval Research (ONR); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1603317
- Alternate Identifier(s):
- OSTI ID: 1593182
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 116; Journal Issue: 3; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Tunnel junctions; Oxides; C-MOS; Chemical elements; Crystal structure; Tunneling electroresistance; Epitaxy; Nonvolatile memory; Ferroelectric materials; Heterostructures
Citation Formats
Abuwasib, Mohammad, Serrao, Claudy R., Stan, Liliana, Salahuddin, Sayeef, and Bakaul, Saidur Rahman. Tunneling electroresistance effects in epitaxial complex oxides on silicon. United States: N. p., 2020.
Web. doi:10.1063/1.5133081.
Abuwasib, Mohammad, Serrao, Claudy R., Stan, Liliana, Salahuddin, Sayeef, & Bakaul, Saidur Rahman. Tunneling electroresistance effects in epitaxial complex oxides on silicon. United States. https://doi.org/10.1063/1.5133081
Abuwasib, Mohammad, Serrao, Claudy R., Stan, Liliana, Salahuddin, Sayeef, and Bakaul, Saidur Rahman. Tue .
"Tunneling electroresistance effects in epitaxial complex oxides on silicon". United States. https://doi.org/10.1063/1.5133081. https://www.osti.gov/servlets/purl/1603317.
@article{osti_1603317,
title = {Tunneling electroresistance effects in epitaxial complex oxides on silicon},
author = {Abuwasib, Mohammad and Serrao, Claudy R. and Stan, Liliana and Salahuddin, Sayeef and Bakaul, Saidur Rahman},
abstractNote = {Complex oxide-based ferroelectric tunnel junctions (FTJs) show excellent nonvolatile memory characteristics promising for emerging technology. However, integration of these epitaxially grown FTJs electrically with a silicon substrate remains challenging due to their incompatible lattice structures and poor electronic interfaces resulting from the direct synthesis techniques. Here, we present an epitaxial SrRuO3/PbZr0.2Ti0.8O3/SrRuO3 FTJ integrated electrically with a doped silicon substrate after a layer transfer process. The tunnel currents of the FTJ on silicon show a large tunneling electroresistance (~1×105%) effect, which is explained by a numerical FTJ model incorporating pinned dipoles at the interfaces. This proof of concept of the integration of functional oxide heterostructures with silicon opens a pathway to beyond-CMOS computing devices using unconventional materials.},
doi = {10.1063/1.5133081},
journal = {Applied Physics Letters},
number = 3,
volume = 116,
place = {United States},
year = {Tue Jan 21 00:00:00 EST 2020},
month = {Tue Jan 21 00:00:00 EST 2020}
}
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