Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions
Abstract
Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed through use of a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related transport mechanisms. Herein, the fundamental role of the microstructure of HZO films determining the balance between those contributions is demonstrated. The HZO film presents coherent or incoherent grain boundaries, associated to the coexistance of monoclinic and orthorhombic phases, which are dictated by the mismatch with the substrates for epitaxial growth. These grain boundaries are the toggle that allows to obtain either large (up to ≈450%) and fully reversible genuine polarization controlled electroresistance when only the orthorhombic phase is present or an irreversible and extremely large (≈103–105%) electroresistance when both phases coexist.
- Authors:
-
[2];
[1];
[1];
- Univ. Autònoma de Barcelona (Spain). Inst. de Ciència de Materials de Barcelona (ICMAB-CSIC)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- Spanish Ministry of Economy, Competitiveness and Universities; Generalitat de Catalunya; “la Caixa Foundation”; Ramón y Cajal; China Scholarship Council (CSC); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1606631
- Grant/Contract Number:
- AC05-00OR22725; RYC-2017-22531; RYC- 2012-11709; SEV-2015-0496-16-3); 2017 SGR 1377; 100010434; LCF/BQ/IN17/11620051; SEV‐2015‐0496; MAT2017‐85232‐R; RYC‐2017‐22531; RYC‐2012‐11709; SEV‐2015‐0496‐16‐3; MAT2015‐73839‐JIN; 201506080019; 201806100207
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Electronic Materials
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2199-160X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ferroelectric tunnel junctions; hafnium oxides; Hf0.5Zr0.5O2; resistive switching; tunnel electroresistance
Citation Formats
Sulzbach, Milena Cervo, Estandía, Saúl, Long, Xiao, Lyu, Jike, Dix, Nico, Gàzquez, Jaume, Chisholm, Matthew F., Sánchez, Florencio, Fina, Ignasi, and Fontcuberta, Josep. Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions. United States: N. p., 2019.
Web. doi:10.1002/aelm.201900852.
Sulzbach, Milena Cervo, Estandía, Saúl, Long, Xiao, Lyu, Jike, Dix, Nico, Gàzquez, Jaume, Chisholm, Matthew F., Sánchez, Florencio, Fina, Ignasi, & Fontcuberta, Josep. Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions. United States. https://doi.org/10.1002/aelm.201900852
Sulzbach, Milena Cervo, Estandía, Saúl, Long, Xiao, Lyu, Jike, Dix, Nico, Gàzquez, Jaume, Chisholm, Matthew F., Sánchez, Florencio, Fina, Ignasi, and Fontcuberta, Josep. Thu .
"Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions". United States. https://doi.org/10.1002/aelm.201900852. https://www.osti.gov/servlets/purl/1606631.
@article{osti_1606631,
title = {Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions},
author = {Sulzbach, Milena Cervo and Estandía, Saúl and Long, Xiao and Lyu, Jike and Dix, Nico and Gàzquez, Jaume and Chisholm, Matthew F. and Sánchez, Florencio and Fina, Ignasi and Fontcuberta, Josep},
abstractNote = {Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed through use of a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related transport mechanisms. Herein, the fundamental role of the microstructure of HZO films determining the balance between those contributions is demonstrated. The HZO film presents coherent or incoherent grain boundaries, associated to the coexistance of monoclinic and orthorhombic phases, which are dictated by the mismatch with the substrates for epitaxial growth. These grain boundaries are the toggle that allows to obtain either large (up to ≈450%) and fully reversible genuine polarization controlled electroresistance when only the orthorhombic phase is present or an irreversible and extremely large (≈103–105%) electroresistance when both phases coexist.},
doi = {10.1002/aelm.201900852},
journal = {Advanced Electronic Materials},
number = 1,
volume = 6,
place = {United States},
year = {Thu Nov 14 00:00:00 EST 2019},
month = {Thu Nov 14 00:00:00 EST 2019}
}
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