Solution-based electrical doping of semiconducting polymer films over a limited depth
Abstract
Solution-based electrical doping protocols may allow more versatility in the design of organic electronic devices; yet, controlling the diffusion of dopants in organic semiconductors and their stability has proven challenging. Here we present a solution-based approach for electrical p-doping of films of donor conjugated organic semiconductors and their blends with acceptors over a limited depth with a decay constant of 10–20 nm by post-process immersion into a polyoxometalate solution (phosphomolybdic acid, PMA) in nitromethane. PMA-doped films show increased electrical conductivity and work function, reduced solubility in the processing solvent, and improved photo-oxidative stability in air. Here, this approach is applicable to a variety of organic semiconductors used in photovoltaics and field-effect transistors. PMA doping over a limited depth of bulk heterojunction polymeric films, in which amine-containing polymers were mixed in the solution used for film formation, enables single-layer organic photovoltaic devices, processed at room temperature, with power conversion efficiencies up to 5.9 ± 0.2% and stable performance on shelf-lifetime studies at 60 °C for at least 280 h.
- Authors:
-
[2];
- Georgia Inst. of Technology, Atlanta, GA (United States)
- Kyushu Univ., Fukuoka (Japan)
- Univ. of California, Santa Barbara, CA (United States)
- Eindhoven Univ. of Technology, Eindhoven (Netherlands)
- Publication Date:
- Research Org.:
- Stanford Univ., CA (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1579840
- Grant/Contract Number:
- EE0004946; N00014-14-1-0580; N00014-16-1-2520; N00014-04-1-0313
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Materials
- Additional Journal Information:
- Journal Volume: 16; Journal Issue: 4; Journal ID: ISSN 1476-1122
- Publisher:
- Springer Nature - Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Kolesov, Vladimir A., Fuentes-Hernandez, Canek, Chou, Wen -Fang, Aizawa, Naoya, Larrain, Felipe A., Wang, Ming, Perrotta, Alberto, Choi, Sangmoo, Graham, Samuel, Bazan, Guillermo C., Nguyen, Thuc -Quyen, Marder, Seth R., and Kippelen, Bernard. Solution-based electrical doping of semiconducting polymer films over a limited depth. United States: N. p., 2016.
Web. doi:10.1038/NMAT4818.
Kolesov, Vladimir A., Fuentes-Hernandez, Canek, Chou, Wen -Fang, Aizawa, Naoya, Larrain, Felipe A., Wang, Ming, Perrotta, Alberto, Choi, Sangmoo, Graham, Samuel, Bazan, Guillermo C., Nguyen, Thuc -Quyen, Marder, Seth R., & Kippelen, Bernard. Solution-based electrical doping of semiconducting polymer films over a limited depth. United States. https://doi.org/10.1038/NMAT4818
Kolesov, Vladimir A., Fuentes-Hernandez, Canek, Chou, Wen -Fang, Aizawa, Naoya, Larrain, Felipe A., Wang, Ming, Perrotta, Alberto, Choi, Sangmoo, Graham, Samuel, Bazan, Guillermo C., Nguyen, Thuc -Quyen, Marder, Seth R., and Kippelen, Bernard. Mon .
"Solution-based electrical doping of semiconducting polymer films over a limited depth". United States. https://doi.org/10.1038/NMAT4818. https://www.osti.gov/servlets/purl/1579840.
@article{osti_1579840,
title = {Solution-based electrical doping of semiconducting polymer films over a limited depth},
author = {Kolesov, Vladimir A. and Fuentes-Hernandez, Canek and Chou, Wen -Fang and Aizawa, Naoya and Larrain, Felipe A. and Wang, Ming and Perrotta, Alberto and Choi, Sangmoo and Graham, Samuel and Bazan, Guillermo C. and Nguyen, Thuc -Quyen and Marder, Seth R. and Kippelen, Bernard},
abstractNote = {Solution-based electrical doping protocols may allow more versatility in the design of organic electronic devices; yet, controlling the diffusion of dopants in organic semiconductors and their stability has proven challenging. Here we present a solution-based approach for electrical p-doping of films of donor conjugated organic semiconductors and their blends with acceptors over a limited depth with a decay constant of 10–20 nm by post-process immersion into a polyoxometalate solution (phosphomolybdic acid, PMA) in nitromethane. PMA-doped films show increased electrical conductivity and work function, reduced solubility in the processing solvent, and improved photo-oxidative stability in air. Here, this approach is applicable to a variety of organic semiconductors used in photovoltaics and field-effect transistors. PMA doping over a limited depth of bulk heterojunction polymeric films, in which amine-containing polymers were mixed in the solution used for film formation, enables single-layer organic photovoltaic devices, processed at room temperature, with power conversion efficiencies up to 5.9 ± 0.2% and stable performance on shelf-lifetime studies at 60 °C for at least 280 h.},
doi = {10.1038/NMAT4818},
journal = {Nature Materials},
number = 4,
volume = 16,
place = {United States},
year = {Mon Dec 05 00:00:00 EST 2016},
month = {Mon Dec 05 00:00:00 EST 2016}
}
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