Thermoelectric Properties of Nanocrystalline Silicon Films Prepared by Hot-Wire and Plasma-Enhanced Chemical-Vapor Depositions
Abstract
We report thermoelectric measurements over a temperature range of 80 K to 300 K of heavily boron-doped nanocrystalline silicon films prepared by hot-wire and plasma-enhanced chemical-vapor depositions. The nanocrystalline silicon films were doped by either gaseous deposition precursors or post-deposition ion implantation, resulting in boron concentrations ranging from 1-2 x 1020 cm-3 to 3 x 1021 cm-3. Reasonable values of the Seebeck coefficient and electrical conductivity were obtained at 300 K, comparable to many other research work. We also report thermal conductivity measurements on these films before doping, which we use to estimate their prospective thermoelectric efficiency. These measurements show values as low as 0.76 W/mK at 300 K which depend highly upon the grain sizes of the nc-Si films. We find that post-deposition doping by ion-implantation is more effective at enhancing the power factor than gaseous doping, and the power factor is only weakly dependent upon doping concentration for the films doped by ion implantation. We conclude that improvements of the thermoelectric efficiency of nc-Si films may depend more on a reduction of their thermal conductivity than doping optimization. The small grain sizes and the low thermal conductivity of the undoped nc-Si films accomplished in this work are thereforemore »
- Authors:
-
[1];
- KeyW Corporation, Hanover, MD (United States)
- Naval Research Lab. (NRL), Washington, DC (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1557401
- Report Number(s):
- NREL/JA-5900-74562
Journal ID: ISSN 0361-5235
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Electronic Materials
- Additional Journal Information:
- Journal Volume: 48; Journal Issue: 8; Journal ID: ISSN 0361-5235
- Publisher:
- Springer
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; thermoelectric; power factor; thermal conductivity; nanocrystalline silicon; chemical-vapor deposition; ion-implantation
Citation Formats
Jugdersuren, Battogtokh, Kearney, Brian T., Liu, Xiao, Stroud, Rhonda M., Culbertson, James C., Desario, Paul A., Nemeth, William M., and Wang, Qi. Thermoelectric Properties of Nanocrystalline Silicon Films Prepared by Hot-Wire and Plasma-Enhanced Chemical-Vapor Depositions. United States: N. p., 2019.
Web. doi:10.1007/s11664-019-07262-y.
Jugdersuren, Battogtokh, Kearney, Brian T., Liu, Xiao, Stroud, Rhonda M., Culbertson, James C., Desario, Paul A., Nemeth, William M., & Wang, Qi. Thermoelectric Properties of Nanocrystalline Silicon Films Prepared by Hot-Wire and Plasma-Enhanced Chemical-Vapor Depositions. United States. https://doi.org/10.1007/s11664-019-07262-y
Jugdersuren, Battogtokh, Kearney, Brian T., Liu, Xiao, Stroud, Rhonda M., Culbertson, James C., Desario, Paul A., Nemeth, William M., and Wang, Qi. Tue .
"Thermoelectric Properties of Nanocrystalline Silicon Films Prepared by Hot-Wire and Plasma-Enhanced Chemical-Vapor Depositions". United States. https://doi.org/10.1007/s11664-019-07262-y. https://www.osti.gov/servlets/purl/1557401.
@article{osti_1557401,
title = {Thermoelectric Properties of Nanocrystalline Silicon Films Prepared by Hot-Wire and Plasma-Enhanced Chemical-Vapor Depositions},
author = {Jugdersuren, Battogtokh and Kearney, Brian T. and Liu, Xiao and Stroud, Rhonda M. and Culbertson, James C. and Desario, Paul A. and Nemeth, William M. and Wang, Qi},
abstractNote = {We report thermoelectric measurements over a temperature range of 80 K to 300 K of heavily boron-doped nanocrystalline silicon films prepared by hot-wire and plasma-enhanced chemical-vapor depositions. The nanocrystalline silicon films were doped by either gaseous deposition precursors or post-deposition ion implantation, resulting in boron concentrations ranging from 1-2 x 1020 cm-3 to 3 x 1021 cm-3. Reasonable values of the Seebeck coefficient and electrical conductivity were obtained at 300 K, comparable to many other research work. We also report thermal conductivity measurements on these films before doping, which we use to estimate their prospective thermoelectric efficiency. These measurements show values as low as 0.76 W/mK at 300 K which depend highly upon the grain sizes of the nc-Si films. We find that post-deposition doping by ion-implantation is more effective at enhancing the power factor than gaseous doping, and the power factor is only weakly dependent upon doping concentration for the films doped by ion implantation. We conclude that improvements of the thermoelectric efficiency of nc-Si films may depend more on a reduction of their thermal conductivity than doping optimization. The small grain sizes and the low thermal conductivity of the undoped nc-Si films accomplished in this work are therefore encouraging developments.},
doi = {10.1007/s11664-019-07262-y},
journal = {Journal of Electronic Materials},
number = 8,
volume = 48,
place = {United States},
year = {Tue Jun 11 00:00:00 EDT 2019},
month = {Tue Jun 11 00:00:00 EDT 2019}
}
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Works referenced in this record:
Thermal conductivity of amorphous and nanocrystalline silicon films prepared by hot-wire chemical-vapor deposition
journal, July 2017
- Jugdersuren, B.; Kearney, B. T.; Queen, D. R.
- Physical Review B, Vol. 96, Issue 1
Absolute Seebeck coefficient of platinum from 80 to 340 K and the thermal and electrical conductivities of lead from 80 to 400 K
journal, March 1973
- Moore, J. P.; Graves, R. S.
- Journal of Applied Physics, Vol. 44, Issue 3
Significant enhancement of the thermoelectric figure of merit of polycrystalline Si films by reducing grain size
journal, July 2016
- Valalaki, K.; Vouroutzis, N.; Nassiopoulou, A. G.
- Journal of Physics D: Applied Physics, Vol. 49, Issue 31
Thermal conductivity of a -Si:H thin films
journal, September 1994
- Cahill, David G.; Katiyar, M.; Abelson, J. R.
- Physical Review B, Vol. 50, Issue 9
Thermoelectric Properties of Nanocrystalline Silicon from a Scaled-Up Synthesis Plant
journal, December 2012
- Kessler, Victor; Gautam, Devendraprakash; Hülser, Tim
- Advanced Engineering Materials, Vol. 15, Issue 5
Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics
journal, November 2017
- Acosta, E.; Wight, N. M.; Smirnov, V.
- Journal of Electronic Materials, Vol. 47, Issue 6
Hydrogenated nanocrystalline silicon thin films with promising thermoelectric properties
journal, July 2015
- Loureiro, Joana; Mateus, Tiago; Filonovich, Sergej
- Applied Physics A, Vol. 120, Issue 4
Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells
journal, March 2016
- Nemeth, Bill; Young, David L.; Page, Matthew R.
- Journal of Materials Research, Vol. 31, Issue 6, p. 671-681
Improved thermoelectric performance of hot pressed nanostructured n-type SiGe bulk alloys
journal, January 2014
- Basu, Ranita; Bhattacharya, Shovit; Bhatt, Ranu
- Journal of Materials Chemistry A, Vol. 2, Issue 19
Complex thermoelectric materials
journal, February 2008
- Snyder, G. Jeffrey; Toberer, Eric S.
- Nature Materials, Vol. 7, Issue 2, p. 105-114
Nanocrystalline silicon: lattice dynamics and enhanced thermoelectric properties
journal, January 2014
- Claudio, Tania; Stein, Niklas; Stroppa, Daniel G.
- Phys. Chem. Chem. Phys., Vol. 16, Issue 47
Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si
journal, April 2013
- Neophytou, Neophytos; Zianni, Xanthippi; Kosina, Hans
- Nanotechnology, Vol. 24, Issue 20
Low-temperature thermoelectrical power measurements using analogue subtraction
journal, February 2000
- Sumanasekera, G. U.; Grigorian, L.; Eklund, P. C.
- Measurement Science and Technology, Vol. 11, Issue 3
High-performance bulk thermoelectrics with all-scale hierarchical architectures
journal, September 2012
- Biswas, Kanishka; He, Jiaqing; Blum, Ivan D.
- Nature, Vol. 489, Issue 7416, p. 414-418
Raman spectroscopy of heavily doped polycrystalline silicon thin films
journal, June 2000
- Nickel, N. H.; Lengsfeld, P.; Sieber, I.
- Physical Review B, Vol. 61, Issue 23
Ion-beam-induced amorphization and recrystallization in silicon
journal, December 2004
- Pelaz, Lourdes; Marqués, Luis A.; Barbolla, Juan
- Journal of Applied Physics, Vol. 96, Issue 11
From amorphous to nanocrystalline: the effect of nanograins in an amorphous matrix on the thermal conductivity of hot-wire chemical-vapor deposited silicon films
journal, January 2018
- Kearney, B. T.; Jugdersuren, B.; Queen, D. R.
- Journal of Physics: Condensed Matter, Vol. 30, Issue 8
Mechanism of thermal conductivity suppression in doped silicon studied with nonequilibrium molecular dynamics
journal, August 2012
- Lee, Yongjin; Hwang, Gyeong S.
- Physical Review B, Vol. 86, Issue 7
Thermal conductivity of thin films: Measurements and understanding
journal, May 1989
- Cahill, David G.; Fischer, Henry E.; Klitsner, Tom
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, Issue 3
Thin-film thermoelectric devices with high room-temperature figures of merit
journal, October 2001
- Venkatasubramanian, Rama; Siivola, Edward; Colpitts, Thomas
- Nature, Vol. 413, Issue 6856, p. 597-602
Thermal Conductivity of Nanocrystalline Silicon: Importance of Grain Size and Frequency-Dependent Mean Free Paths
journal, June 2011
- Wang, Zhaojie; Alaniz, Joseph E.; Jang, Wanyoung
- Nano Letters, Vol. 11, Issue 6
Characterization of nanometer-thick polycrystalline silicon with phonon-boundary scattering enhanced thermoelectric properties and its application in infrared sensors
journal, January 2015
- Zhou, Huchuan; Kropelnicki, Piotr; Lee, Chengkuo
- Nanoscale, Vol. 7, Issue 2
Thermal conductivity of individual silicon nanowires
journal, October 2003
- Li, Deyu; Wu, Yiying; Kim, Philip
- Applied Physics Letters, Vol. 83, Issue 14, p. 2934-2936
(Invited) Silicon-Based Nanocomposites for Thermoelectric High Temperature Waste Heat Recovery
journal, September 2015
- Schierning, G.; Wiggers, H.; Schmechel, R.
- ECS Transactions, Vol. 69, Issue 9
Structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin film
journal, September 2006
- Takashiri, M.; Borca-Tasciuc, T.; Jacquot, A.
- Journal of Applied Physics, Vol. 100, Issue 5
Complex thermoelectric materials
book, October 2010
- Snyder, G. Jeffrey; Toberer, Eric S.
- Materials for Sustainable Energy
Thermoelectric Properties of Nanocrystalline Silicon from a Scaled-Up Synthesis Plant
journal, June 2013
- Kessler, Victor; Gautam, Devendraprakash; Hülser, Tim
- Advanced Engineering Materials, Vol. 15, Issue 11