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Title: Nanocrystallization of amorphous M-Si thin film composites (M=Cr, Mn) and their thermoelectric properties

Abstract

We report on electrical resistivity and thermoelectric power of Cr-Si and Mn-Si composite films at temperatures from 300 K to 1000 K. The films were deposited on unheated Si/SiO{sub 2} substrates by magnetron sputtering from composite targets. The as-deposited films have amorphous structure. We use annealing with in-situ transport properties measurements to transform the films into nanocrystalline state with continuous monitoring their state. Nanocrystallization is considered as a promising way to improve thermoelectric efficiency, primarily due to reduction of lattice thermal conductivity {kappa}. Among variety of methods for fabrication of NC materials, crystallization from amorphous state has features which are crucially important with respect to their electronic transport properties: since the crystallites and their interfaces are formed in this method via solid state reaction, the NC samples are dense and the interfaces are clean. This removes additional factors affecting properties of a nanocrystalline composite, such as contamination of nanocrystal interfaces by elements from environment or nanocrystal lattice distortion during nanocrystallization. Depending on the initial film composition, the films are transformed during annealing into single phase or multi-phase nanocrystalline composites with average grain size of 10 nm to 20 nm. We study the crystallization kinetics, stability of amorphous and nanocrystalline statemore » and relation between electronic transport properties and structural state of the composites.« less

Authors:
; ;  [1];  [2]
  1. A.F. Ioffe Physical-Technical Institute, Sankt-Petersburg, 194021 (Russian Federation)
  2. (Germany)
Publication Date:
OSTI Identifier:
22068983
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1449; Journal Issue: 1; Conference: ECT2011: 9. European conference on thermoelectrics, Thessaloniki (Greece), 28-30 Sep 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; AMORPHOUS STATE; ANNEALING; CHROMIUM SILICIDES; COMPOSITE MATERIALS; CRYSTALLIZATION; CRYSTALS; DEPOSITION; ELECTRIC CONDUCTIVITY; FABRICATION; GRAIN SIZE; INTERFACES; MANGANESE SILICIDES; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES; THIN FILMS

Citation Formats

Burkov, A. T., Novikov, S. V., Schumann, J., and Leibniz Institute for Solid State and Materials Research, Dresden. Nanocrystallization of amorphous M-Si thin film composites (M=Cr, Mn) and their thermoelectric properties. United States: N. p., 2012. Web. doi:10.1063/1.4731536.
Burkov, A. T., Novikov, S. V., Schumann, J., & Leibniz Institute for Solid State and Materials Research, Dresden. Nanocrystallization of amorphous M-Si thin film composites (M=Cr, Mn) and their thermoelectric properties. United States. doi:10.1063/1.4731536.
Burkov, A. T., Novikov, S. V., Schumann, J., and Leibniz Institute for Solid State and Materials Research, Dresden. Tue . "Nanocrystallization of amorphous M-Si thin film composites (M=Cr, Mn) and their thermoelectric properties". United States. doi:10.1063/1.4731536.
@article{osti_22068983,
title = {Nanocrystallization of amorphous M-Si thin film composites (M=Cr, Mn) and their thermoelectric properties},
author = {Burkov, A. T. and Novikov, S. V. and Schumann, J. and Leibniz Institute for Solid State and Materials Research, Dresden},
abstractNote = {We report on electrical resistivity and thermoelectric power of Cr-Si and Mn-Si composite films at temperatures from 300 K to 1000 K. The films were deposited on unheated Si/SiO{sub 2} substrates by magnetron sputtering from composite targets. The as-deposited films have amorphous structure. We use annealing with in-situ transport properties measurements to transform the films into nanocrystalline state with continuous monitoring their state. Nanocrystallization is considered as a promising way to improve thermoelectric efficiency, primarily due to reduction of lattice thermal conductivity {kappa}. Among variety of methods for fabrication of NC materials, crystallization from amorphous state has features which are crucially important with respect to their electronic transport properties: since the crystallites and their interfaces are formed in this method via solid state reaction, the NC samples are dense and the interfaces are clean. This removes additional factors affecting properties of a nanocrystalline composite, such as contamination of nanocrystal interfaces by elements from environment or nanocrystal lattice distortion during nanocrystallization. Depending on the initial film composition, the films are transformed during annealing into single phase or multi-phase nanocrystalline composites with average grain size of 10 nm to 20 nm. We study the crystallization kinetics, stability of amorphous and nanocrystalline state and relation between electronic transport properties and structural state of the composites.},
doi = {10.1063/1.4731536},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1449,
place = {United States},
year = {2012},
month = {6}
}