High aspect ratio anisotropic silicon etching for x-ray phase contrast imaging grating fabrication
Abstract
Lab based x-ray phase contrast imaging (XPCI) systems have historically focused on medical applications, but there is growing interest in material science applications for non-destructive analysis of low density materials. Extending this imaging technique to higher density materials or larger samples requires higher aspect ratio gratings, to allow the use of a higher energy x-ray source. Here, we demonstrate the use of anisotropic silicon (Si) etching in potassium hydroxide (KOH), to achieve extremely high aspect ratio gratings. This method has been shown to be effective in fabricating deep, uniform gratings by taking advantage of the etch selectivity of differing crystalline planes of silicon. Our work has introduced a method for determining Si crystalline plane directions, specific to (110) Si wafers, enabling high alignment accuracy of the etch mask to these crystalline planes.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1524206
- Alternate Identifier(s):
- OSTI ID: 1780136
- Report Number(s):
- SAND-2018-7120J
Journal ID: ISSN 1369-8001; 665381
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Materials Science in Semiconductor Processing
- Additional Journal Information:
- Journal Volume: 92; Journal Issue: C; Journal ID: ISSN 1369-8001
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; XPCI; Anisotropic aqueous silicon etch; Potassium Hydroxide Etching; Deep Silicon Etching
Citation Formats
Finnegan, Patrick S., Hollowell, Andrew E., Arrington, Christian L., and Dagel, Amber L. High aspect ratio anisotropic silicon etching for x-ray phase contrast imaging grating fabrication. United States: N. p., 2018.
Web. doi:10.1016/j.mssp.2018.06.013.
Finnegan, Patrick S., Hollowell, Andrew E., Arrington, Christian L., & Dagel, Amber L. High aspect ratio anisotropic silicon etching for x-ray phase contrast imaging grating fabrication. United States. https://doi.org/10.1016/j.mssp.2018.06.013
Finnegan, Patrick S., Hollowell, Andrew E., Arrington, Christian L., and Dagel, Amber L. Wed .
"High aspect ratio anisotropic silicon etching for x-ray phase contrast imaging grating fabrication". United States. https://doi.org/10.1016/j.mssp.2018.06.013. https://www.osti.gov/servlets/purl/1524206.
@article{osti_1524206,
title = {High aspect ratio anisotropic silicon etching for x-ray phase contrast imaging grating fabrication},
author = {Finnegan, Patrick S. and Hollowell, Andrew E. and Arrington, Christian L. and Dagel, Amber L.},
abstractNote = {Lab based x-ray phase contrast imaging (XPCI) systems have historically focused on medical applications, but there is growing interest in material science applications for non-destructive analysis of low density materials. Extending this imaging technique to higher density materials or larger samples requires higher aspect ratio gratings, to allow the use of a higher energy x-ray source. Here, we demonstrate the use of anisotropic silicon (Si) etching in potassium hydroxide (KOH), to achieve extremely high aspect ratio gratings. This method has been shown to be effective in fabricating deep, uniform gratings by taking advantage of the etch selectivity of differing crystalline planes of silicon. Our work has introduced a method for determining Si crystalline plane directions, specific to (110) Si wafers, enabling high alignment accuracy of the etch mask to these crystalline planes.},
doi = {10.1016/j.mssp.2018.06.013},
journal = {Materials Science in Semiconductor Processing},
number = C,
volume = 92,
place = {United States},
year = {Wed Jun 27 00:00:00 EDT 2018},
month = {Wed Jun 27 00:00:00 EDT 2018}
}
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Cited by: 15 works
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Figures / Tables:
Figure 1: Alignment of an etch mask to differing Si crystalline planes on a (110) Si wafer results in different and predictable profiles. A) Trench profiles which are parallel to a {111} plane yield sidewalls 90° to the wafer surface and a minimal hard mask undercut resulting from KOH anisotropicmore »
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Works referencing / citing this record:
Tungsten nanoparticles-based x-ray absorption gratings for cascaded Talbot–Lau interferometers
journal, September 2019
- Lei, Yaohu; Li, Qiaofei; Wali, Faiz
- Journal of Micromechanics and Microengineering, Vol. 29, Issue 11
Figures / Tables found in this record:
Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.