Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N
Abstract
The exciton bound to a pair of nitrogen atoms situated at nearby lattice sites in dilute GaAs:N provides an energetically uniform electronic system, spectrally distinct from pairs with larger or smaller separations, and can even be grown with a uniform pair orientation in the crystal. We use photoluminescence excitation spectroscopy on an ensemble of N pairs to study the narrow continuous energy distribution within two of the individual exchange- and symmetry-split exciton states. Inhomogeneous linewidths of 50-60 ueV vary across the crystal on a mesoscopic scale and can be 30 ueV at microscopic locations indicating that the homogeneous linewidth inferred from previous time-domain measurements is still considerably broadened. While excitation and emission linewidths are similar, results show a small energy shift between them indicative of exciton transfer via phonon-assisted tunneling between spatially separated N pairs. We numerically simulate the tunneling in a spatial network of randomly distributed pairs having a normal distribution of bound exciton energies. Comparing the ensemble excitation-emission energy shift with the measured results shows that the transfer probability is higher than expected from the dilute pair concentration and what is known of the exciton wavefunction spatial extent. Both the broadening and the exciton transfer have implications formore »
- Authors:
-
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Phillips-Univ., Renthof (Germany)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1508957
- Alternate Identifier(s):
- OSTI ID: 1505663
- Report Number(s):
- NREL/JA-5K00-73378
Journal ID: ISSN 0021-8979
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 125; Journal Issue: 14; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; atomic and molecular spectra; excitation energies; photoluminescence excitation spectroscopy; semiconductors; excitons; phonons; photoluminescence spectroscopy; quantum computing
Citation Formats
Fluegel, B., Beaton, D. A., Alberi, K., Volz, K., and Stolz, W. Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N. United States: N. p., 2019.
Web. doi:10.1063/1.5086181.
Fluegel, B., Beaton, D. A., Alberi, K., Volz, K., & Stolz, W. Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N. United States. https://doi.org/10.1063/1.5086181
Fluegel, B., Beaton, D. A., Alberi, K., Volz, K., and Stolz, W. Mon .
"Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N". United States. https://doi.org/10.1063/1.5086181. https://www.osti.gov/servlets/purl/1508957.
@article{osti_1508957,
title = {Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N},
author = {Fluegel, B. and Beaton, D. A. and Alberi, K. and Volz, K. and Stolz, W.},
abstractNote = {The exciton bound to a pair of nitrogen atoms situated at nearby lattice sites in dilute GaAs:N provides an energetically uniform electronic system, spectrally distinct from pairs with larger or smaller separations, and can even be grown with a uniform pair orientation in the crystal. We use photoluminescence excitation spectroscopy on an ensemble of N pairs to study the narrow continuous energy distribution within two of the individual exchange- and symmetry-split exciton states. Inhomogeneous linewidths of 50-60 ueV vary across the crystal on a mesoscopic scale and can be 30 ueV at microscopic locations indicating that the homogeneous linewidth inferred from previous time-domain measurements is still considerably broadened. While excitation and emission linewidths are similar, results show a small energy shift between them indicative of exciton transfer via phonon-assisted tunneling between spatially separated N pairs. We numerically simulate the tunneling in a spatial network of randomly distributed pairs having a normal distribution of bound exciton energies. Comparing the ensemble excitation-emission energy shift with the measured results shows that the transfer probability is higher than expected from the dilute pair concentration and what is known of the exciton wavefunction spatial extent. Both the broadening and the exciton transfer have implications for the goal of pair-bound excitons as a single- or multi-qubit system.},
doi = {10.1063/1.5086181},
journal = {Journal of Applied Physics},
number = 14,
volume = 125,
place = {United States},
year = {Mon Apr 08 00:00:00 EDT 2019},
month = {Mon Apr 08 00:00:00 EDT 2019}
}
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Works referenced in this record:
Extremely uniform bound exciton states in nitrogen δ -doped GaAs studied by photoluminescence spectroscopy in external magnetic fields
journal, October 2011
- Harada, Yukihiro; Kubo, Terutada; Inoue, Tomoya
- Journal of Applied Physics, Vol. 110, Issue 8
Exciton Energy Transfer in GaP: N
journal, November 1975
- Wiesner, P. J.; Street, R. A.; Wolf, H. D.
- Physical Review Letters, Vol. 35, Issue 20
Thermally activated exciton transfer in :N
journal, September 1985
- Kash, J. A.; Mariette, H.; Wolford, D. J.
- Physical Review B, Vol. 32, Issue 6
Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs N alloys: The appearance of a mobility edge
journal, July 2012
- Alberi, K.; Fluegel, B.; Beaton, D. A.
- Physical Review B, Vol. 86, Issue 4
Crystallographically aligned 1.508 eV nitrogen pairs in ultra-dilute GaAs:N
journal, July 2018
- Fluegel, Brian; Beaton, Dan; Hanna, Mark
- Japanese Journal of Applied Physics, Vol. 57, Issue 9
Epitaxial two-dimensional nitrogen atomic sheet in GaAs
journal, January 2014
- Harada, Yukihiro; Yamamoto, Masuki; Baba, Takeshi
- Applied Physics Letters, Vol. 104, Issue 4
Theory of time-resolved luminescence of bound excitons in semiconductor alloys
journal, March 1989
- Hjalmarson, Harold P.; Myles, Charles W.
- Physical Review B, Vol. 39, Issue 9
Resonant spin orientation at the exciton level anticrossing in InP quantum dots
journal, March 2008
- Masumoto, Yasuaki; Toshiyuki, Ken; Suzuki, Tsukasa
- Physical Review B, Vol. 77, Issue 11
Exciton transfer at low temperature in P:N and :N
journal, April 1985
- Mariette, H.; Kash, J. A.; Wolford, D. J.
- Physical Review B, Vol. 31, Issue 8
Excitons bound to nitrogen pairs in GaAs as seen by photoluminescence of high spectral and spatial resolution
journal, September 2007
- Karaiskaj, D.; Mascarenhas, A.; Klem, J. F.
- Physical Review B, Vol. 76, Issue 12
Photoluminescence in a disordered insulator: The trapped-exciton model
journal, October 1982
- Kivelson, S.; Gelatt, C. D.
- Physical Review B, Vol. 26, Issue 8
Dynamics of excitons bound to nitrogen isoelectronic centers in GaAs
journal, March 2015
- St-Jean, P.; Éthier-Majcher, G.; Francoeur, S.
- Physical Review B, Vol. 91, Issue 11
Impurity perturbation to the host band structure and recoil of the impurity state
journal, August 2003
- Zhang, Yong; Fluegel, B.; Hanna, M. C.
- Physical Review B, Vol. 68, Issue 7
Optical Spectroscopy of Single Impurity Centers in Semiconductors
journal, August 2004
- Francoeur, S.; Klem, J. F.; Mascarenhas, A.
- Physical Review Letters, Vol. 93, Issue 6
Exciton tunneling inhibited by disorder in
journal, June 1984
- Kash, J. A.
- Physical Review B, Vol. 29, Issue 12
Complete quantum control of exciton qubits bound to isoelectronic centres
journal, May 2014
- Éthier-Majcher, G.; St-Jean, P.; Boso, G.
- Nature Communications, Vol. 5, Issue 1
Dispersive hopping transport via sites having a Gaussian distribution of energies
journal, July 1981
- Schönherr, G.; Bässler, H.; Silver, M.
- Philosophical Magazine B, Vol. 44, Issue 1
Hopping Conductivity in Disordered Systems
journal, October 1971
- Ambegaokar, Vinay; Halperin, B. I.; Langer, J. S.
- Physical Review B, Vol. 4, Issue 8
Single nitrogen dyad magnetoluminescence in GaAs
journal, December 2009
- Marcet, S.; Ouellet-Plamondon, C.; Klem, J. F.
- Physical Review B, Vol. 80, Issue 24
Final-state readout of exciton qubits by observing resonantly excited photoluminescence in quantum dots
journal, January 2007
- Kuroda, K.; Kuroda, T.; Watanabe, K.
- Applied Physics Letters, Vol. 90, Issue 5
Final-state read-out of exciton qubits by observing resonantly excited photoluminescence in quantum dots
text, January 2006
- Kuroda, K.; Kuroda, T.; Watanabe, K.
- arXiv
Works referencing / citing this record:
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journal, January 2020
- Walukiewicz, Wladyslaw; Zide, Joshua M. O.
- Journal of Applied Physics, Vol. 127, Issue 1