Raman spectroscopy of neutron irradiated silicon carbide: Correlation among Raman spectra, swelling, and irradiation temperature
Abstract
Abstract The effects of neutron irradiation on microstructural evolution and the resultant changes in physical and mechanical properties are of critical importance for the development of silicon carbide (SiC) materials for nuclear applications. This study neutron‐irradiated β‐SiC under a wide range of conditions at temperatures between 235 and 750°C and neutron doses of 0.01–11.8 displacements per atom, and then evaluated the effects on the SiC structure using Raman spectroscopy. The SiC optical phonon lines were shifted to lower wavenumbers by irradiation. Correlations were found among the wavenumber of the longitudinal optical phonon line, irradiation‐induced swelling, and irradiation temperature. The peak shift also correlated indirectly with decreasing thermal conductivity of irradiated SiC. The irradiation‐induced peak shift is explained by combinations of lattice strain, reduction of the elastic modulus, and other factors including decreasing coherent domain size. These findings bridge irradiation‐induced microstructural changes and property changes and illustrate how Raman spectroscopy is a useful tool for nondestructively assessing irradiated SiC materials for nuclear applications.
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Nuclear Energy (NE)
- OSTI Identifier:
- 1459305
- Alternate Identifier(s):
- OSTI ID: 1458577
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Raman Spectroscopy
- Additional Journal Information:
- Journal Volume: 49; Journal Issue: 10; Journal ID: ISSN 0377-0486
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; irradiation effects; neutron irradiation; nuclear; silicon carbide; swelling
Citation Formats
Koyanagi, Takaaki, Katoh, Yutai, and Lance, Michael J. Raman spectroscopy of neutron irradiated silicon carbide: Correlation among Raman spectra, swelling, and irradiation temperature. United States: N. p., 2018.
Web. doi:10.1002/jrs.5425.
Koyanagi, Takaaki, Katoh, Yutai, & Lance, Michael J. Raman spectroscopy of neutron irradiated silicon carbide: Correlation among Raman spectra, swelling, and irradiation temperature. United States. https://doi.org/10.1002/jrs.5425
Koyanagi, Takaaki, Katoh, Yutai, and Lance, Michael J. Sun .
"Raman spectroscopy of neutron irradiated silicon carbide: Correlation among Raman spectra, swelling, and irradiation temperature". United States. https://doi.org/10.1002/jrs.5425. https://www.osti.gov/servlets/purl/1459305.
@article{osti_1459305,
title = {Raman spectroscopy of neutron irradiated silicon carbide: Correlation among Raman spectra, swelling, and irradiation temperature},
author = {Koyanagi, Takaaki and Katoh, Yutai and Lance, Michael J.},
abstractNote = {Abstract The effects of neutron irradiation on microstructural evolution and the resultant changes in physical and mechanical properties are of critical importance for the development of silicon carbide (SiC) materials for nuclear applications. This study neutron‐irradiated β‐SiC under a wide range of conditions at temperatures between 235 and 750°C and neutron doses of 0.01–11.8 displacements per atom, and then evaluated the effects on the SiC structure using Raman spectroscopy. The SiC optical phonon lines were shifted to lower wavenumbers by irradiation. Correlations were found among the wavenumber of the longitudinal optical phonon line, irradiation‐induced swelling, and irradiation temperature. The peak shift also correlated indirectly with decreasing thermal conductivity of irradiated SiC. The irradiation‐induced peak shift is explained by combinations of lattice strain, reduction of the elastic modulus, and other factors including decreasing coherent domain size. These findings bridge irradiation‐induced microstructural changes and property changes and illustrate how Raman spectroscopy is a useful tool for nondestructively assessing irradiated SiC materials for nuclear applications.},
doi = {10.1002/jrs.5425},
journal = {Journal of Raman Spectroscopy},
number = 10,
volume = 49,
place = {United States},
year = {Sun Jul 01 00:00:00 EDT 2018},
month = {Sun Jul 01 00:00:00 EDT 2018}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Cited by: 13 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
X-ray diffractometry and high-resolution electron microscopy of neutron-irradiated SiC to a fluence of 1.9×1027 n/m2
journal, March 1998
- Yano, T.; Miyazaki, H.; Akiyoshi, M.
- Journal of Nuclear Materials, Vol. 253, Issue 1-3
Skin/bulk nanostructure and corrosion of SiC-based fibres: a surface Rayleigh and Raman study
journal, January 2003
- Havel, M.; Colomban, Ph.
- Journal of Raman Spectroscopy, Vol. 34, Issue 10
Linear response calculation of first-order Raman spectra of point defects in silicon carbide: Raman spectra of point defects in SiC
journal, July 2016
- Roma, Guido
- physica status solidi (a), Vol. 213, Issue 11
Stress analysis and probabilistic assessment of multi-layer SiC-based accident tolerant nuclear fuel cladding
journal, November 2015
- Stone, J. G.; Schleicher, R.; Deck, C. P.
- Journal of Nuclear Materials, Vol. 466
Handbook of SiC properties for fuel performance modeling
journal, September 2007
- Snead, Lance L.; Nozawa, Takashi; Katoh, Yutai
- Journal of Nuclear Materials, Vol. 371, Issue 1-3
Raman Investigation of SiC Polytypes
journal, July 1997
- Nakashima, S.; Harima, H.
- physica status solidi (a), Vol. 162, Issue 1
Non-destructive mechanical characterization of SiC fibers by Raman spectroscopy
journal, September 2001
- Gouadec, Gwénaël; Colomban, Philippe
- Journal of the European Ceramic Society, Vol. 21, Issue 9
Microstructural evolution of neutron irradiated 3C-SiC
journal, August 2017
- Sprouster, D. J.; Koyanagi, T.; Dooryhee, E.
- Scripta Materialia, Vol. 137
Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature
journal, March 2016
- Campbell, Anne A.; Porter, Wallace D.; Katoh, Yutai
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 370
Raman scattering in polycrystalline Influence of stacking faults
journal, October 1998
- Rohmfeld, Stefan; Hundhausen, Martin; Ley, Lothar
- Physical Review B, Vol. 58, Issue 15
Fabrication and characterization of fully ceramic microencapsulated fuels
journal, July 2012
- Terrani, K. A.; Kiggans, J. O.; Katoh, Y.
- Journal of Nuclear Materials, Vol. 426, Issue 1-3
Amorphization and dynamic annealing of hexagonal SiC upon heavy-ion irradiation: Effects on swelling and mechanical properties
journal, April 2009
- Kerbiriou, Xavier; Costantini, Jean-Marc; Sauzay, Maxime
- Journal of Applied Physics, Vol. 105, Issue 7
Influence of Stacking Disorder on the Raman Spectrum of 3C-SiC
journal, September 1999
- Rohmfeld, S.; Hundhausen, M.; Ley, L.
- physica status solidi (b), Vol. 215, Issue 1
Displacement damage in silicon carbide irradiated in fission reactors
journal, May 2004
- Heinisch, H. L.; Greenwood, L. R.; Weber, W. J.
- Journal of Nuclear Materials, Vol. 327, Issue 2-3
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
journal, October 1996
- Casady, J. B.; Johnson, R. W.
- Solid-State Electronics, Vol. 39, Issue 10
Raman study of SiC fibres made from polycarbosilane
journal, February 1987
- Sasaki, Y.; Nishina, Y.; Sato, M.
- Journal of Materials Science, Vol. 22, Issue 2
Optical-phonon states of SiC small particles studied by Raman scattering and infrared absorption
journal, July 1989
- Sasaki, Y.; Nishina, Y.; Sato, M.
- Physical Review B, Vol. 40, Issue 3
‘Smart’ Raman/Rayleigh imaging of nanosized SiC materials using the spatial correlation model
journal, October 2004
- Havel, M.; Baron, D.; Colomban, Ph.
- Journal of Materials Science, Vol. 39, Issue 20
Raman scattering of neutron irradiated 6H-SiC
journal, May 2012
- Wang, P. F.; Huang, L.; Zhu, W.
- Solid State Communications, Vol. 152, Issue 10
Observation and possible mechanism of irradiation induced creep in ceramics
journal, March 2013
- Katoh, Yutai; Snead, Lance L.; Parish, Chad M.
- Journal of Nuclear Materials, Vol. 434, Issue 1-3
Raman Study of Hi-Nicalon-Fiber-Reinforced Celsian Composites: II, Residual Stress in Fibers
journal, May 2001
- Gouadec, Gwénaël; Colomban, Philippe; Bansal, Narottam P.
- Journal of the American Ceramic Society, Vol. 84, Issue 5
Damage production in semiconductor materials by a focused Ga+ ion beam
journal, November 2000
- Menzel, R.; Gärtner, K.; Wesch, W.
- Journal of Applied Physics, Vol. 88, Issue 10
Thermo-mechanical analysis of LWR SiC/SiC composite cladding
journal, April 2014
- Ben-Belgacem, M.; Richet, V.; Terrani, K. A.
- Journal of Nuclear Materials, Vol. 447, Issue 1-3
Pressure dependence of Raman phonons of Ge and -SiC
journal, January 1982
- Olego, Diego; Cardona, Manuel
- Physical Review B, Vol. 25, Issue 2
Raman spectroscopy of optical phonon confinement in nanostructured materials
journal, January 2007
- Arora, Akhilesh K.; Rajalakshmi, M.; Ravindran, T. R.
- Journal of Raman Spectroscopy, Vol. 38, Issue 6
Current status and recent research achievements in SiC/SiC composites
journal, December 2014
- Katoh, Y.; Snead, L. L.; Henager, C. H.
- Journal of Nuclear Materials, Vol. 455, Issue 1-3
Determination of carrier concentration by Fano interference of Raman scattering in heavily doped n-type 4H-SiC
journal, August 2012
- Mitani, Takeshi; Nakashima, Shin-ichi; Kojima, Kazutoshi
- Journal of Applied Physics, Vol. 112, Issue 4
Evaluation of neutron irradiated silicon carbide and silicon carbide composites
journal, September 2007
- Newsome, George; Snead, Lance L.; Hinoki, Tatsuya
- Journal of Nuclear Materials, Vol. 371, Issue 1-3
Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy
journal, December 2016
- Koyanagi, T.; Lance, M. J.; Katoh, Y.
- Scripta Materialia, Vol. 125
Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering
journal, January 1987
- Yugami, H.; Nakashima, S.; Mitsuishi, A.
- Journal of Applied Physics, Vol. 61, Issue 1
Raman spectroscopy study of heavy-ion-irradiated α-SiC
journal, May 2006
- Sorieul, S.; Costantini, J-M; Gosmain, L.
- Journal of Physics: Condensed Matter, Vol. 18, Issue 22
Temperature dependence of the optical phonons and transverse effective charge in -SiC
journal, March 1982
- Olego, Diego; Cardona, Manuel
- Physical Review B, Vol. 25, Issue 6
Microstructural development in cubic silicon carbide during irradiation at elevated temperatures
journal, June 2006
- Katoh, Y.; Hashimoto, N.; Kondo, S.
- Journal of Nuclear Materials, Vol. 351, Issue 1-3, p. 228-240