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Title: Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy

Raman spectra from polycrystalline beta-silicon carbide (SiC) were collected following neutron irradiation at 380–1180 °C to 0.011–1.87 displacement per atom. The longitudinal optical (LO) peak shifted to a lower frequency and broadened as a result of the irradiation. The changes observed in the LO phonon line shape and position in neutron-irradiated SiC are explained by a combination of changes in the lattice constant and Young's modulus, and the phonon confinement effect. The phonon confinement model reasonably estimates the defect-defect distance in the irradiated SiC, which is consistent with results from previous experimental studies and simulations.
Authors:
 [1] ;  [1] ;  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Scripta Materialia
Additional Journal Information:
Journal Volume: 125; Journal Issue: C; Journal ID: ISSN 1359-6462
Publisher:
Elsevier
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). High Flux Isotope Reactor (HFIR); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). High Temperature Materials Lab. (HTML)
Sponsoring Org:
USDOE Office of Science (SC), Fusion Energy Sciences (FES) (SC-24); USDOE Office of Nuclear Energy (NE); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Silicon carbide; Irradiation defects; Raman spectroscopy
OSTI Identifier:
1295114
Alternate Identifier(s):
OSTI ID: 1359858

Koyanagi, T., Lance, M. J., and Katoh, Y.. Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy. United States: N. p., Web. doi:10.1016/j.scriptamat.2016.08.004.
Koyanagi, T., Lance, M. J., & Katoh, Y.. Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy. United States. doi:10.1016/j.scriptamat.2016.08.004.
Koyanagi, T., Lance, M. J., and Katoh, Y.. 2016. "Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy". United States. doi:10.1016/j.scriptamat.2016.08.004. https://www.osti.gov/servlets/purl/1295114.
@article{osti_1295114,
title = {Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy},
author = {Koyanagi, T. and Lance, M. J. and Katoh, Y.},
abstractNote = {Raman spectra from polycrystalline beta-silicon carbide (SiC) were collected following neutron irradiation at 380–1180 °C to 0.011–1.87 displacement per atom. The longitudinal optical (LO) peak shifted to a lower frequency and broadened as a result of the irradiation. The changes observed in the LO phonon line shape and position in neutron-irradiated SiC are explained by a combination of changes in the lattice constant and Young's modulus, and the phonon confinement effect. The phonon confinement model reasonably estimates the defect-defect distance in the irradiated SiC, which is consistent with results from previous experimental studies and simulations.},
doi = {10.1016/j.scriptamat.2016.08.004},
journal = {Scripta Materialia},
number = C,
volume = 125,
place = {United States},
year = {2016},
month = {8}
}