Chemical-free n-type and p-type multilayer-graphene transistors
Abstract
Here, a single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.
- Authors:
-
- Voxtel Inc. and Univ. of Oregon, Eugene, OR (United States). Lokey Lab.
- Brookhaven National Lab. (BNL), Upton, NY (United States). Sustainable Energy Technologies Dept.; Stony Brook Univ., NY (United States). Dept. of Physics and Astronomy and Dept. of Electrical and Computer Engineering
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Biological and Environmental Research (BER); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Laboratory Directed Research and Development (LDRD) Program
- OSTI Identifier:
- 1459168
- Alternate Identifier(s):
- OSTI ID: 1283420
- Report Number(s):
- BNL-206802-2018-JAAM
Journal ID: ISSN 0003-6951; APPLAB
- Grant/Contract Number:
- SC0012704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 109; Journal Issue: 5; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 36 MATERIALS SCIENCE; doping; multilayers; amorphous metals; electron beam deposition; field effect transistors; graphene; sodium; electron doped superconductors; Dirac equation
Citation Formats
Dissanayake, D. M. N. M., and Eisaman, Matthew D. Chemical-free n-type and p-type multilayer-graphene transistors. United States: N. p., 2016.
Web. doi:10.1063/1.4960530.
Dissanayake, D. M. N. M., & Eisaman, Matthew D. Chemical-free n-type and p-type multilayer-graphene transistors. United States. https://doi.org/10.1063/1.4960530
Dissanayake, D. M. N. M., and Eisaman, Matthew D. Fri .
"Chemical-free n-type and p-type multilayer-graphene transistors". United States. https://doi.org/10.1063/1.4960530. https://www.osti.gov/servlets/purl/1459168.
@article{osti_1459168,
title = {Chemical-free n-type and p-type multilayer-graphene transistors},
author = {Dissanayake, D. M. N. M. and Eisaman, Matthew D.},
abstractNote = {Here, a single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.},
doi = {10.1063/1.4960530},
journal = {Applied Physics Letters},
number = 5,
volume = 109,
place = {United States},
year = {Fri Aug 05 00:00:00 EDT 2016},
month = {Fri Aug 05 00:00:00 EDT 2016}
}
Web of Science
Works referenced in this record:
A Graphene Field-Effect Device
journal, April 2007
- Lemme, Max C.; Echtermeyer, Tim J.; Baus, Matthias
- IEEE Electron Device Letters, Vol. 28, Issue 4
Device scaling limits of Si MOSFETs and their application dependencies
journal, March 2001
- Frank, D. J.; Dennard, R. H.; Nowak, E.
- Proceedings of the IEEE, Vol. 89, Issue 3
Graphene: Its Fundamentals to Future Applications
journal, October 2011
- Moon, Jeong-Sun; Gaskill, D. Kurt
- IEEE Transactions on Microwave Theory and Techniques, Vol. 59, Issue 10
The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions
journal, March 2007
- Cheianov, V. V.; Fal'ko, V.; Altshuler, B. L.
- Science, Vol. 315, Issue 5816
A roadmap for graphene
journal, October 2012
- Novoselov, K. S.; Fal′ko, V. I.; Colombo, L.
- Nature, Vol. 490, Issue 7419
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
journal, May 2012
- Yang, H.; Heo, J.; Park, S.
- Science, Vol. 336, Issue 6085
Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation
journal, July 2015
- Yu, Xuechao; Shen, Youde; Liu, Tao
- Scientific Reports, Vol. 5, Issue 1
Microelectronics packaging: present and future
journal, April 1995
- Tong, Ho-Ming
- Materials Chemistry and Physics, Vol. 40, Issue 3
Photocurrent generation of a single-gate graphene p–n junction fabricated by interfacial modification
journal, September 2015
- Wang, S.; Sekine, Y.; Suzuki, S.
- Nanotechnology, Vol. 26, Issue 38
Phase-Coherent Transport in Graphene Quantum Billiards
journal, September 2007
- Miao, F.; Wijeratne, S.; Zhang, Y.
- Science, Vol. 317, Issue 5844
The electronic properties of graphene
journal, January 2009
- Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.
- Reviews of Modern Physics, Vol. 81, Issue 1, p. 109-162
Electric Field Effect in Atomically Thin Carbon Films
journal, October 2004
- Novoselov, K. S.
- Science, Vol. 306, Issue 5696, p. 666-669
Chiral tunnelling and the Klein paradox in graphene
journal, August 2006
- Katsnelson, M. I.; Novoselov, K. S.; Geim, A. K.
- Nature Physics, Vol. 2, Issue 9
Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions
journal, February 2016
- Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.
- Scientific Reports, Vol. 6, Issue 1
Single step, complementary doping of graphene
journal, February 2010
- Brenner, Kevin; Murali, Raghunath
- Applied Physics Letters, Vol. 96, Issue 6
Electronic transport in two-dimensional graphene
journal, May 2011
- Das Sarma, S.; Adam, Shaffique; Hwang, E. H.
- Reviews of Modern Physics, Vol. 83, Issue 2, p. 407-470
Graphene for CMOS and Beyond CMOS Applications
journal, December 2010
- Banerjee, Sanjay K.; Register, Leonard Franklin; Tutuc, Emanuel
- Proceedings of the IEEE, Vol. 98, Issue 12