Integrated circuits based on conjugated polymer monolayer
Abstract
It is still a great challenge to fabricate conjugated polymer monolayer field-effect transistors (PoM-FETs) due to intricate crystallization and film formation of conjugated polymers. Here we demonstrate PoM-FETs based on a single monolayer of a conjugated polymer. The resulting PoM-FETs are highly reproducible and exhibit charge carrier mobilities reaching 3 cm2 V-1 s-1. The high performance is attributed to the strong interactions of the polymer chains present already in solution leading to pronounced edge-on packing and well-defined microstructure in the monolayer. The high reproducibility enables the integration of discrete unipolar PoM-FETs into inverters and ring oscillators. Real logic functionality has been demonstrated by constructing a 15-bit code generator in which hundreds of self-assembled PoM-FETs are addressed simultaneously. Lastly, our results provide the state-of-the-art example of integrated circuits based on a conjugated polymer monolayer, opening prospective pathways for bottom-up organic electronics.
- Authors:
-
[2]
- Max Planck Inst. for Polymer Research, Ackermannweg, Mainz (Germany); Eindhoven Univ. of Technology (Netherlands). Molecular Materials and Nanosystems, Inst. for Complex Molecular Systems
- Max Planck Inst. for Polymer Research, Ackermannweg, Mainz (Germany)
- Hong Kong Univ. of Science and Technology, Clear Water Bay, Kowloon (Hong Kong). Dept. of Chemistry
- North Carolina State Univ., Raleigh, NC (United States). Dept. of Physics and ORaCEL
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Max Planck Inst. for Polymer Research, Ackermannweg, Mainz (Germany); Lodz Univ. of Technology, Lodz (Poland). Dept. of Molecular Physics, Faculty of Chemistry
- Delft Univ. of Technology (Netherlands). Faculty of Aerospace Engineering
- Publication Date:
- Research Org.:
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); European Union (EU); National Science Centre, Poland; Alexander von Humboldt Foundation; Federal Ministry of Education and Research, Germany; National Science Foundation (NSF)
- OSTI Identifier:
- 1426172
- Grant/Contract Number:
- AC02-76SF00515; AC02-05CH11231; UMO-2015/18/E/ST3/00322
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Electronic and spintronic devices; Electronic devices
Citation Formats
Li, Mengmeng, Mangalore, Deepthi Kamath, Zhao, Jingbo, Carpenter, Joshua H., Yan, Hongping, Ade, Harald, Yan, He, Müllen, Klaus, Blom, Paul W. M., Pisula, Wojciech, de Leeuw, Dago M., and Asadi, Kamal. Integrated circuits based on conjugated polymer monolayer. United States: N. p., 2018.
Web. doi:10.1038/s41467-017-02805-5.
Li, Mengmeng, Mangalore, Deepthi Kamath, Zhao, Jingbo, Carpenter, Joshua H., Yan, Hongping, Ade, Harald, Yan, He, Müllen, Klaus, Blom, Paul W. M., Pisula, Wojciech, de Leeuw, Dago M., & Asadi, Kamal. Integrated circuits based on conjugated polymer monolayer. United States. https://doi.org/10.1038/s41467-017-02805-5
Li, Mengmeng, Mangalore, Deepthi Kamath, Zhao, Jingbo, Carpenter, Joshua H., Yan, Hongping, Ade, Harald, Yan, He, Müllen, Klaus, Blom, Paul W. M., Pisula, Wojciech, de Leeuw, Dago M., and Asadi, Kamal. Wed .
"Integrated circuits based on conjugated polymer monolayer". United States. https://doi.org/10.1038/s41467-017-02805-5. https://www.osti.gov/servlets/purl/1426172.
@article{osti_1426172,
title = {Integrated circuits based on conjugated polymer monolayer},
author = {Li, Mengmeng and Mangalore, Deepthi Kamath and Zhao, Jingbo and Carpenter, Joshua H. and Yan, Hongping and Ade, Harald and Yan, He and Müllen, Klaus and Blom, Paul W. M. and Pisula, Wojciech and de Leeuw, Dago M. and Asadi, Kamal},
abstractNote = {It is still a great challenge to fabricate conjugated polymer monolayer field-effect transistors (PoM-FETs) due to intricate crystallization and film formation of conjugated polymers. Here we demonstrate PoM-FETs based on a single monolayer of a conjugated polymer. The resulting PoM-FETs are highly reproducible and exhibit charge carrier mobilities reaching 3 cm2 V-1 s-1. The high performance is attributed to the strong interactions of the polymer chains present already in solution leading to pronounced edge-on packing and well-defined microstructure in the monolayer. The high reproducibility enables the integration of discrete unipolar PoM-FETs into inverters and ring oscillators. Real logic functionality has been demonstrated by constructing a 15-bit code generator in which hundreds of self-assembled PoM-FETs are addressed simultaneously. Lastly, our results provide the state-of-the-art example of integrated circuits based on a conjugated polymer monolayer, opening prospective pathways for bottom-up organic electronics.},
doi = {10.1038/s41467-017-02805-5},
journal = {Nature Communications},
number = 1,
volume = 9,
place = {United States},
year = {Wed Jan 31 00:00:00 EST 2018},
month = {Wed Jan 31 00:00:00 EST 2018}
}
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Electrical Contact Properties between the Accumulation Layer and Metal Electrodes in Ultrathin Poly(3-hexylthiophene)(P3HT) Field Effect Transistors
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Interface Engineering: An Effective Approach toward High-Performance Organic Field-Effect Transistors
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NO 2 Detection and Real-Time Sensing with Field-Effect Transistors
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journal, November 2004
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journal, February 2011
- Li, Yuning; Sonar, Prashant; Singh, Samarendra P.
- Journal of the American Chemical Society, Vol. 133, Issue 7
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journal, March 2011
- Tsao, Hoi Nok; Cho, Don M.; Park, Insun
- Journal of the American Chemical Society, Vol. 133, Issue 8
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