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Title: Chemical vapor deposition of monolayer MoS 2 directly on ultrathin Al 2O 3 for low-power electronics

Monolayer MoS 2 has recently been identified as a promising material for high-performance electronics. However, monolayer MoS 2 must be integrated with ultrathin high-κ gate dielectrics in order to realize practical low-power devices. In this paper, we report the chemical vapor deposition (CVD) of monolayer MoS 2 directly on 20 nm thick Al 2O 3 grown by atomic layer deposition (ALD). The quality of the resulting MoS 2 is characterized by a comprehensive set of microscopic and spectroscopic techniques. Furthermore, a low-temperature (200 °C) Al 2O 3 ALD process is developed that maintains dielectric integrity following the high-temperature CVD of MoS 2 (800 °C). Field-effect transistors (FETs) derived from these MoS 2/Al 2O 3 stacks show minimal hysteresis with a sub-threshold swing as low as ~220 mV/decade, threshold voltages of ~2 V, and current I ON/I OFF ratio as high as ~10 4, where I OFF is defined as the current at zero gate voltage as is customary for determining power consumption in complementary logic circuits. Finally, the system presented here concurrently optimizes multiple low-power electronics figures of merit while providing a transfer-free method of integrating monolayer MoS 2 with ultrathin high-κ dielectrics, thus enabling a scalable pathway for enhancement-modemore » FETs for low-power applications.« less
Authors:
 [1] ; ORCiD logo [1] ;  [1] ;  [1] ; ORCiD logo [1] ; ORCiD logo [2] ;  [3] ;  [4] ; ORCiD logo [5]
  1. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering
  2. Northwestern Univ., Evanston, IL (United States). Applied Physics Graduate Program
  3. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering. Applied Physics Graduate Program. Dept. of Physics and Astronomy
  4. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering. Dept. of Chemistry
  5. Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering. Applied Physics Graduate Program. Dept. of Chemistry. Dept. of Electrical Engineering and Computer Science
Publication Date:
Grant/Contract Number:
SC0001059; 70NANB14H012; EFRI-1433510; DMR-1121262; NNCI-1542205; NNX12AM44H; N00014-14-1-0669
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 5; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Northwestern Univ., Evanston, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Inst. of Standards and Technology (NIST) (United States); National Science Foundation (NSF); National Aeronautic and Space Administration (NASA); Office of Naval Research (ONR) (United States)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; doping; metal insulator semiconductor structures; semiconductor growth; chemical vapor deposition; atomic layer deposition; dielectric materials; dielectric thin films; monolayers; field effect transistors
OSTI Identifier:
1465963
Alternate Identifier(s):
OSTI ID: 1351027

Bergeron, Hadallia, Sangwan, Vinod K., McMorrow, Julian J., Campbell, Gavin P., Balla, Itamar, Liu, Xiaolong, Bedzyk, Michael J., Marks, Tobin J., and Hersam, Mark C.. Chemical vapor deposition of monolayer MoS2 directly on ultrathin Al2O3 for low-power electronics. United States: N. p., Web. doi:10.1063/1.4975064.
Bergeron, Hadallia, Sangwan, Vinod K., McMorrow, Julian J., Campbell, Gavin P., Balla, Itamar, Liu, Xiaolong, Bedzyk, Michael J., Marks, Tobin J., & Hersam, Mark C.. Chemical vapor deposition of monolayer MoS2 directly on ultrathin Al2O3 for low-power electronics. United States. doi:10.1063/1.4975064.
Bergeron, Hadallia, Sangwan, Vinod K., McMorrow, Julian J., Campbell, Gavin P., Balla, Itamar, Liu, Xiaolong, Bedzyk, Michael J., Marks, Tobin J., and Hersam, Mark C.. 2017. "Chemical vapor deposition of monolayer MoS2 directly on ultrathin Al2O3 for low-power electronics". United States. doi:10.1063/1.4975064. https://www.osti.gov/servlets/purl/1465963.
@article{osti_1465963,
title = {Chemical vapor deposition of monolayer MoS2 directly on ultrathin Al2O3 for low-power electronics},
author = {Bergeron, Hadallia and Sangwan, Vinod K. and McMorrow, Julian J. and Campbell, Gavin P. and Balla, Itamar and Liu, Xiaolong and Bedzyk, Michael J. and Marks, Tobin J. and Hersam, Mark C.},
abstractNote = {Monolayer MoS2 has recently been identified as a promising material for high-performance electronics. However, monolayer MoS2 must be integrated with ultrathin high-κ gate dielectrics in order to realize practical low-power devices. In this paper, we report the chemical vapor deposition (CVD) of monolayer MoS2 directly on 20 nm thick Al2O3 grown by atomic layer deposition (ALD). The quality of the resulting MoS2 is characterized by a comprehensive set of microscopic and spectroscopic techniques. Furthermore, a low-temperature (200 °C) Al2O3 ALD process is developed that maintains dielectric integrity following the high-temperature CVD of MoS2 (800 °C). Field-effect transistors (FETs) derived from these MoS2/Al2O3 stacks show minimal hysteresis with a sub-threshold swing as low as ~220 mV/decade, threshold voltages of ~2 V, and current ION/IOFF ratio as high as ~104, where IOFF is defined as the current at zero gate voltage as is customary for determining power consumption in complementary logic circuits. Finally, the system presented here concurrently optimizes multiple low-power electronics figures of merit while providing a transfer-free method of integrating monolayer MoS2 with ultrathin high-κ dielectrics, thus enabling a scalable pathway for enhancement-mode FETs for low-power applications.},
doi = {10.1063/1.4975064},
journal = {Applied Physics Letters},
number = 5,
volume = 110,
place = {United States},
year = {2017},
month = {1}
}

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