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Title: Significant Reduction of Lattice Thermal Conductivity by the Electron-Phonon Interaction in Silicon with High Carrier Concentrations: A First-Principles Study

Abstract

The electron-phonon interaction is well known to create major resistance to electron transport in metals and semiconductors, whereas fewer studies are directed to its effect on phonon transport, especially in semiconductors. Herein we calculate the phonon lifetimes due to scattering with electrons (or holes), combine them with the intrinsic lifetimes due to the anharmonic phonon-phonon interaction, all from first principles, and evaluate the effect of the electron-phonon interaction on the lattice thermal conductivity of silicon. Unexpectedly, we find a significant reduction of the lattice thermal conductivity at room temperature as the carrier concentration goes above 1019 cm–3 (the reduction reaches up to 45% in p-type silicon at around 1021 cm–3), a range of great technological relevance to thermoelectric materials.

Authors:
 [1];  [1];  [1];  [1];  [2];  [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  2. Rutgers Univ., Piscataway, NJ (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); US Air Force Office of Scientific Research (AFOSR)
OSTI Identifier:
1385317
Alternate Identifier(s):
OSTI ID: 1181477
Grant/Contract Number:  
SC0001299; FG02-09ER46577
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 11; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; solar (photovoltaic); solar (thermal); solid state lighting; phonons; thermal conductivity; thermoelectric; defects; mechanical behavior; charge transport; spin dynamics; materials and chemistry by design; optics; synthesis (novel materials); synthesis (self-assembly); synthesis (scalable processing)

Citation Formats

Liao, Bolin, Qiu, Bo, Zhou, Jiawei, Huberman, Samuel, Esfarjani, Keivan, and Chen, Gang. Significant Reduction of Lattice Thermal Conductivity by the Electron-Phonon Interaction in Silicon with High Carrier Concentrations: A First-Principles Study. United States: N. p., 2015. Web. doi:10.1103/PhysRevLett.114.115901.
Liao, Bolin, Qiu, Bo, Zhou, Jiawei, Huberman, Samuel, Esfarjani, Keivan, & Chen, Gang. Significant Reduction of Lattice Thermal Conductivity by the Electron-Phonon Interaction in Silicon with High Carrier Concentrations: A First-Principles Study. United States. https://doi.org/10.1103/PhysRevLett.114.115901
Liao, Bolin, Qiu, Bo, Zhou, Jiawei, Huberman, Samuel, Esfarjani, Keivan, and Chen, Gang. Wed . "Significant Reduction of Lattice Thermal Conductivity by the Electron-Phonon Interaction in Silicon with High Carrier Concentrations: A First-Principles Study". United States. https://doi.org/10.1103/PhysRevLett.114.115901. https://www.osti.gov/servlets/purl/1385317.
@article{osti_1385317,
title = {Significant Reduction of Lattice Thermal Conductivity by the Electron-Phonon Interaction in Silicon with High Carrier Concentrations: A First-Principles Study},
author = {Liao, Bolin and Qiu, Bo and Zhou, Jiawei and Huberman, Samuel and Esfarjani, Keivan and Chen, Gang},
abstractNote = {The electron-phonon interaction is well known to create major resistance to electron transport in metals and semiconductors, whereas fewer studies are directed to its effect on phonon transport, especially in semiconductors. Herein we calculate the phonon lifetimes due to scattering with electrons (or holes), combine them with the intrinsic lifetimes due to the anharmonic phonon-phonon interaction, all from first principles, and evaluate the effect of the electron-phonon interaction on the lattice thermal conductivity of silicon. Unexpectedly, we find a significant reduction of the lattice thermal conductivity at room temperature as the carrier concentration goes above 1019 cm–3 (the reduction reaches up to 45% in p-type silicon at around 1021 cm–3), a range of great technological relevance to thermoelectric materials.},
doi = {10.1103/PhysRevLett.114.115901},
journal = {Physical Review Letters},
number = 11,
volume = 114,
place = {United States},
year = {Wed Mar 18 00:00:00 EDT 2015},
month = {Wed Mar 18 00:00:00 EDT 2015}
}

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Cited by: 217 works
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