High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity
Abstract
Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and interchip communications. Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption, and modulation depth. However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties. We demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cutoff frequency of 1.2 GHz.
- Authors:
-
- Columbia Univ., New York, NY (United States). Dept. of Mechanical Engineering
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science
- Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering
- Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States). Sensors Directorate
- Publication Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1370895
- Grant/Contract Number:
- SC0001088
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 15; Journal Issue: 3; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; optoelectronics; electro-optic modulator; graphene; boron nitride; photonic crystal
Citation Formats
Gao, Yuanda, Shiue, Ren-Jye, Gan, Xuetao, Li, Luozhou, Peng, Cheng, Meric, Inanc, Wang, Lei, Szep, Attila, Walker, Dennis, Hone, James, and Englund, Dirk. High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity. United States: N. p., 2015.
Web. doi:10.1021/nl504860z.
Gao, Yuanda, Shiue, Ren-Jye, Gan, Xuetao, Li, Luozhou, Peng, Cheng, Meric, Inanc, Wang, Lei, Szep, Attila, Walker, Dennis, Hone, James, & Englund, Dirk. High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity. United States. https://doi.org/10.1021/nl504860z
Gao, Yuanda, Shiue, Ren-Jye, Gan, Xuetao, Li, Luozhou, Peng, Cheng, Meric, Inanc, Wang, Lei, Szep, Attila, Walker, Dennis, Hone, James, and Englund, Dirk. Fri .
"High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity". United States. https://doi.org/10.1021/nl504860z. https://www.osti.gov/servlets/purl/1370895.
@article{osti_1370895,
title = {High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity},
author = {Gao, Yuanda and Shiue, Ren-Jye and Gan, Xuetao and Li, Luozhou and Peng, Cheng and Meric, Inanc and Wang, Lei and Szep, Attila and Walker, Dennis and Hone, James and Englund, Dirk},
abstractNote = {Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and interchip communications. Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption, and modulation depth. However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties. We demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cutoff frequency of 1.2 GHz.},
doi = {10.1021/nl504860z},
journal = {Nano Letters},
number = 3,
volume = 15,
place = {United States},
year = {Fri Feb 20 00:00:00 EST 2015},
month = {Fri Feb 20 00:00:00 EST 2015}
}
Web of Science
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