Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics
Abstract
To minimize the lattice thermal conductivity in thermoelectrics, strategies typically focus on the scattering of low-frequency phonons by interfaces and high-frequency phonons by point defects. In addition, scattering of mid-frequency phonons by dense dislocations, localized at the grain boundaries, has been shown to reduce the lattice thermal conductivity and improve the thermoelectric performance. Here we propose a vacancy engineering strategy to create dense dislocations in the grains. In Pb1$$-$$xSb2x/3Se solid solutions, cation vacancies are intentionally introduced, where after thermal annealing the vacancies can annihilate through a number of mechanisms creating the desired dislocations homogeneously distributed within the grains. This leads to a lattice thermal conductivity as low as 0.4Wm-1 K-1 and a high thermoelectric figure of merit, which can be explained by a dislocation scattering model. As a result, the vacancy engineering strategy used here should be equally applicable for solid solution thermoelectrics and provides a strategy for improving zT.
- Authors:
-
- Tongji Univ., Shanghai (China)
- Chinese Academy of Science, Beijing (China)
- Northwestern Univ., Evanston, IL (United States)
- Publication Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1345970
- Grant/Contract Number:
- SC0001299
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 8; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; semiconductors; thermoelectrics
Citation Formats
Chen, Zhiwei, Ge, Binghui, Li, Wen, Lin, Siqi, Shen, Jiawen, Chang, Yunjie, Hanus, Riley, Snyder, G. Jeffrey, and Pei, Yanzhong. Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics. United States: N. p., 2017.
Web. doi:10.1038/ncomms13828.
Chen, Zhiwei, Ge, Binghui, Li, Wen, Lin, Siqi, Shen, Jiawen, Chang, Yunjie, Hanus, Riley, Snyder, G. Jeffrey, & Pei, Yanzhong. Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics. United States. https://doi.org/10.1038/ncomms13828
Chen, Zhiwei, Ge, Binghui, Li, Wen, Lin, Siqi, Shen, Jiawen, Chang, Yunjie, Hanus, Riley, Snyder, G. Jeffrey, and Pei, Yanzhong. Wed .
"Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics". United States. https://doi.org/10.1038/ncomms13828. https://www.osti.gov/servlets/purl/1345970.
@article{osti_1345970,
title = {Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics},
author = {Chen, Zhiwei and Ge, Binghui and Li, Wen and Lin, Siqi and Shen, Jiawen and Chang, Yunjie and Hanus, Riley and Snyder, G. Jeffrey and Pei, Yanzhong},
abstractNote = {To minimize the lattice thermal conductivity in thermoelectrics, strategies typically focus on the scattering of low-frequency phonons by interfaces and high-frequency phonons by point defects. In addition, scattering of mid-frequency phonons by dense dislocations, localized at the grain boundaries, has been shown to reduce the lattice thermal conductivity and improve the thermoelectric performance. Here we propose a vacancy engineering strategy to create dense dislocations in the grains. In Pb1$-$xSb2x/3Se solid solutions, cation vacancies are intentionally introduced, where after thermal annealing the vacancies can annihilate through a number of mechanisms creating the desired dislocations homogeneously distributed within the grains. This leads to a lattice thermal conductivity as low as 0.4Wm-1 K-1 and a high thermoelectric figure of merit, which can be explained by a dislocation scattering model. As a result, the vacancy engineering strategy used here should be equally applicable for solid solution thermoelectrics and provides a strategy for improving zT.},
doi = {10.1038/ncomms13828},
journal = {Nature Communications},
number = ,
volume = 8,
place = {United States},
year = {Wed Jan 04 00:00:00 EST 2017},
month = {Wed Jan 04 00:00:00 EST 2017}
}
Web of Science
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Liquid‐Phase Hot Deformation to Enhance Thermoelectric Performance of n‐type Bismuth‐Telluride‐Based Solid Solutions
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Manipulation of Band Structure and Interstitial Defects for Improving Thermoelectric SnTe
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Interplay between Composition, Electronic Structure, Disorder, and Doping due to Dual Sublattice Mixing in Nonequilibrium Synthesis of ZnSnN 2 :O
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Are Cu 2 Te‐Based Compounds Excellent Thermoelectric Materials?
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Liquid‐Phase Hot Deformation to Enhance Thermoelectric Performance of n‐type Bismuth‐Telluride‐Based Solid Solutions
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Arrays of Planar Vacancies in Superior Thermoelectric Ge 1− x − y Cd x Bi y Te with Band Convergence
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High Thermoelectric Performance in PbSe–NaSbSe 2 Alloys from Valence Band Convergence and Low Thermal Conductivity
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Adjusting Na doping via wet-chemical synthesis to enhance thermoelectric properties of polycrystalline SnS
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New insights into the role of dislocation engineering in N-type filled skutterudite CoSb 3
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Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg 3 Sb 2 -based materials
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Effect of electrophilic substitution and destructive quantum interference on the thermoelectric performance in molecular devices
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Chalcogenide Thermoelectrics Empowered by an Unconventional Bonding Mechanism
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Extraordinary n‐Type Mg 3 SbBi Thermoelectrics Enabled by Yttrium Doping
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Solution and Solid-State Characterization of PbSe Precursors
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