Melt-Centrifuged (Bi,Sb)2Te3: Engineering Microstructure toward High Thermoelectric Efficiency
Abstract
Abstract Microstructure engineering is an effective strategy to reduce lattice thermal conductivity (κ l ) and enhance the thermoelectric figure of merit ( zT ). Through a new process based on melt‐centrifugation to squeeze out excess eutectic liquid, microstructure modulation is realized to manipulate the formation of dislocations and clean grain boundaries, resulting in a porous network with a platelet structure. In this way, phonon transport is strongly disrupted by a combination of porosity, pore surfaces/junctions, grain boundaries, and lattice dislocations. These collectively result in a ≈60% reduction of κ l compared to zone melted ingot, while the charge carriers remain relatively mobile across the liquid‐fused grains. This porous material displays a zT value of 1.2, which is higher than fully dense conventional zone melted ingots and hot pressed (Bi,Sb) 2 Te 3 alloys. A segmented leg of melt‐centrifuged Bi 0.5 Sb 1.5 Te 3 and Bi 0.3 Sb 1.7 Te 3 could produce a high device ZT exceeding 1.0 over the whole temperature range of 323–523 K and an efficiency up to 9%. The present work demonstrates a method for synthesizing high‐efficiency porous thermoelectric materials through an unconventional melt‐centrifugation technique.
- Authors:
-
[4];
- Tsinghua Univ., Beijing (China); Northwestern Univ., Evanston, IL (United States)
- Northwestern Univ., Evanston, IL (United States); Koc Univ., Istanbul (Turkey)
- Northwestern Univ., Evanston, IL (United States)
- Tsinghua Univ., Beijing (China)
- Publication Date:
- Research Org.:
- Northwestern Univ., Evanston, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC); National Science Foundation (NSF)
- OSTI Identifier:
- 1775432
- Alternate Identifier(s):
- OSTI ID: 1464434
- Grant/Contract Number:
- SC0014520; SC0001299; 51788104; 11474176; ECCS-1542205; DMR-1121262; DGE-1324585; DE‐SC0001299; DE‐SC0014520
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Volume: 30; Journal Issue: 34; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Pan, Yu, Aydemir, Umut, Grovogui, Jann A., Witting, Ian T., Hanus, Riley, Xu, Yaobin, Wu, Jinsong, Wu, Chao‐Feng, Sun, Fu‐Hua, Zhuang, Hua‐Lu, Dong, Jin‐Feng, Li, Jing‐Feng, Dravid, Vinayak P., and Snyder, G. Jeffrey. Melt-Centrifuged (Bi,Sb)2Te3: Engineering Microstructure toward High Thermoelectric Efficiency. United States: N. p., 2018.
Web. doi:10.1002/adma.201802016.
Pan, Yu, Aydemir, Umut, Grovogui, Jann A., Witting, Ian T., Hanus, Riley, Xu, Yaobin, Wu, Jinsong, Wu, Chao‐Feng, Sun, Fu‐Hua, Zhuang, Hua‐Lu, Dong, Jin‐Feng, Li, Jing‐Feng, Dravid, Vinayak P., & Snyder, G. Jeffrey. Melt-Centrifuged (Bi,Sb)2Te3: Engineering Microstructure toward High Thermoelectric Efficiency. United States. https://doi.org/10.1002/adma.201802016
Pan, Yu, Aydemir, Umut, Grovogui, Jann A., Witting, Ian T., Hanus, Riley, Xu, Yaobin, Wu, Jinsong, Wu, Chao‐Feng, Sun, Fu‐Hua, Zhuang, Hua‐Lu, Dong, Jin‐Feng, Li, Jing‐Feng, Dravid, Vinayak P., and Snyder, G. Jeffrey. Sun .
"Melt-Centrifuged (Bi,Sb)2Te3: Engineering Microstructure toward High Thermoelectric Efficiency". United States. https://doi.org/10.1002/adma.201802016. https://www.osti.gov/servlets/purl/1775432.
@article{osti_1775432,
title = {Melt-Centrifuged (Bi,Sb)2Te3: Engineering Microstructure toward High Thermoelectric Efficiency},
author = {Pan, Yu and Aydemir, Umut and Grovogui, Jann A. and Witting, Ian T. and Hanus, Riley and Xu, Yaobin and Wu, Jinsong and Wu, Chao‐Feng and Sun, Fu‐Hua and Zhuang, Hua‐Lu and Dong, Jin‐Feng and Li, Jing‐Feng and Dravid, Vinayak P. and Snyder, G. Jeffrey},
abstractNote = {Abstract Microstructure engineering is an effective strategy to reduce lattice thermal conductivity (κ l ) and enhance the thermoelectric figure of merit ( zT ). Through a new process based on melt‐centrifugation to squeeze out excess eutectic liquid, microstructure modulation is realized to manipulate the formation of dislocations and clean grain boundaries, resulting in a porous network with a platelet structure. In this way, phonon transport is strongly disrupted by a combination of porosity, pore surfaces/junctions, grain boundaries, and lattice dislocations. These collectively result in a ≈60% reduction of κ l compared to zone melted ingot, while the charge carriers remain relatively mobile across the liquid‐fused grains. This porous material displays a zT value of 1.2, which is higher than fully dense conventional zone melted ingots and hot pressed (Bi,Sb) 2 Te 3 alloys. A segmented leg of melt‐centrifuged Bi 0.5 Sb 1.5 Te 3 and Bi 0.3 Sb 1.7 Te 3 could produce a high device ZT exceeding 1.0 over the whole temperature range of 323–523 K and an efficiency up to 9%. The present work demonstrates a method for synthesizing high‐efficiency porous thermoelectric materials through an unconventional melt‐centrifugation technique.},
doi = {10.1002/adma.201802016},
journal = {Advanced Materials},
number = 34,
volume = 30,
place = {United States},
year = {Sun Jul 08 00:00:00 EDT 2018},
month = {Sun Jul 08 00:00:00 EDT 2018}
}
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