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Title: Tuning the physical properties of amorphous In–Zn–Sn–O thin films using combinatorial sputtering

Abstract

Transparent conductive oxides and amorphous oxide semiconductors are important materials for many modern technologies. Here, we explore the ternary indium zinc tin oxide (IZTO) using combinatorial synthesis and spatially resolved characterization. The electrical conductivity, work function, absorption onset, mechanical hardness, and elastic modulus of the optically transparent (>85%) amorphous IZTO thin films were found to be in the range of 10–2415 S/cm, 4.6–5.3 eV, 3.20–3.34 eV, 9.0–10.8 GPa, and 111–132 GPa, respectively, depending on the cation composition and the deposition conditions. Furthermore, this study enables control of IZTO performance over a broad range of cation compositions.

Authors:
 [1];  [1];  [2];  [3];  [1];  [1];  [1]
+ Show Author Affiliations
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Colorado School of Mines, Golden, CO (United States); Indian Institute of Technology Ropar (India)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1339251
Report Number(s):
NREL/JA-5K00-66557
Journal ID: ISSN 2159-6859; applab
Grant/Contract Number:  
AC36-08GO28308; AC36-99GO10337
Resource Type:
Accepted Manuscript
Journal Name:
MRS Communications
Additional Journal Information:
Journal Volume: 6; Journal Issue: 04; Journal ID: ISSN 2159-6859
Publisher:
Materials Research Society - Cambridge University Press
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; IZTO; ZITO; ITZO; high-throughput experiments; amorphous; combinatorial synthesis; oxide

Citation Formats

Ndione, Paul F., Zakutayev, A., Kumar, M., Packard, C. E., Berry, J. J., Perkins, J. D., and Ginley, D. S. Tuning the physical properties of amorphous In–Zn–Sn–O thin films using combinatorial sputtering. United States: N. p., 2016. Web. doi:10.1557/mrc.2016.57.
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Ndione, Paul F., Zakutayev, A., Kumar, M., Packard, C. E., Berry, J. J., Perkins, J. D., & Ginley, D. S. Tuning the physical properties of amorphous In–Zn–Sn–O thin films using combinatorial sputtering. United States. https://doi.org/10.1557/mrc.2016.57
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Ndione, Paul F., Zakutayev, A., Kumar, M., Packard, C. E., Berry, J. J., Perkins, J. D., and Ginley, D. S. Mon . "Tuning the physical properties of amorphous In–Zn–Sn–O thin films using combinatorial sputtering". United States. https://doi.org/10.1557/mrc.2016.57. https://www.osti.gov/servlets/purl/1339251.
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@article{osti_1339251,
title = {Tuning the physical properties of amorphous In–Zn–Sn–O thin films using combinatorial sputtering},
author = {Ndione, Paul F. and Zakutayev, A. and Kumar, M. and Packard, C. E. and Berry, J. J. and Perkins, J. D. and Ginley, D. S.},
abstractNote = {Transparent conductive oxides and amorphous oxide semiconductors are important materials for many modern technologies. Here, we explore the ternary indium zinc tin oxide (IZTO) using combinatorial synthesis and spatially resolved characterization. The electrical conductivity, work function, absorption onset, mechanical hardness, and elastic modulus of the optically transparent (>85%) amorphous IZTO thin films were found to be in the range of 10–2415 S/cm, 4.6–5.3 eV, 3.20–3.34 eV, 9.0–10.8 GPa, and 111–132 GPa, respectively, depending on the cation composition and the deposition conditions. Furthermore, this study enables control of IZTO performance over a broad range of cation compositions.},
doi = {10.1557/mrc.2016.57},
journal = {MRS Communications},
number = 04,
volume = 6,
place = {United States},
year = {Mon Dec 05 00:00:00 EST 2016},
month = {Mon Dec 05 00:00:00 EST 2016}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1557/mrc.2016.57
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Figures / Tables:

Figure 1 Figure 1: XRD scans of IZTO thin film libraries with different cation compositions deposited at PT = 10 mTorr (Ar only). (a) 76% ≤ In ≤ 89% (including In0.87Zn0.07Sn0.06Oy), (b) 43% ≤composition range of In ≤ 55% (including In0.52Zn0.38Sn0.15Oy), (c) 7% ≤ In ≤ 21% (including In0.08Zn0.41Sn0.51Oy). Each plot correspondsmore » to a library (scan of 44 points on one 2x2” glass substrate corresponding to 44 different compositions).« less
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Works referenced in this record:

Transparent Conducting Oxides for Photovoltaics
journal, March 2007

  • Fortunato, Elvira; Ginley, David; Hosono, Hideo
  • MRS Bulletin, Vol. 32, Issue 03, p. 242-247
  • DOI: 10.1557/mrs2007.29

The elastic moduli of oriented tin oxide nanowires
journal, February 2009

Progress in high work function TCO OLED anode alternatives and OLED nanopixelation
journal, March 2002

Modulating Cationic Ratios for High-Performance Transparent Solution-Processed Electronics
journal, January 2016

  • John, Rohit Abraham; Nguyen, Anh Chien; Chen, Yuxin
  • ACS Applied Materials & Interfaces, Vol. 8, Issue 2
  • DOI: 10.1021/acsami.5b08880

Electrical and band-gap properties of amorphous zinc–indium–tin oxide thin films
journal, February 2012

  • Buchholz, D. B.; Proffit, D. E.; Wisser, M. D.
  • Progress in Natural Science: Materials International, Vol. 22, Issue 1
  • DOI: 10.1016/j.pnsc.2011.12.001

Nanoindentation response of ITO film
journal, July 2015

The electrical, optical and structural properties of In x Zn 1− x O y (0  x  1) thin films by combinatorial techniques
journal, December 2004

  • Taylor, Matthew P.; Readey, Dennis W.; Teplin, Charles W.
  • Measurement Science and Technology, Vol. 16, Issue 1
  • DOI: 10.1088/0957-0233/16/1/012

Radio-frequency superimposed direct current magnetron sputtered Ga:ZnO transparent conducting thin films
journal, May 2012

  • Sigdel, Ajaya K.; Ndione, Paul F.; Perkins, John D.
  • Journal of Applied Physics, Vol. 111, Issue 9
  • DOI: 10.1063/1.4709753

Optimizing amorphous indium zinc oxide film growth for low residual stress and high electrical conductivity
journal, October 2013

Conductivity and Transparency of ZnO/SnO 2 -Cosubstituted In 2 O 3
journal, December 1997

  • Palmer, G. B.; Poeppelmeier, K. R.; Mason, T. O.
  • Chemistry of Materials, Vol. 9, Issue 12
  • DOI: 10.1021/cm9704037

Mechanical characterization of microwave sintered zinc oxide
journal, April 2001

  • Mukhopadhyay, A. K.; Ray Chaudhuri, M.; Seal, A.
  • Bulletin of Materials Science, Vol. 24, Issue 2
  • DOI: 10.1007/BF02710088

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping
journal, July 2009

Ultrasonic and Dielectric Characterization of Microwave-Sintered and Conventionally Sintered Zinc Oxide
journal, October 1996

Development of an Optimization Procedure for Magnetron-Sputtered Thin Films to Facilitate Combinatorial Materials Research
journal, February 2016

  • Bunn, Jonathan K.; Voepel, Richard Z.; Wang, Zhiyong
  • Industrial & Engineering Chemistry Research, Vol. 55, Issue 5
  • DOI: 10.1021/acs.iecr.5b04196

Structural, electrical, and optical properties of Zn–In–Sn–O films for silicon heterojunction solar cells
journal, August 2015

How does the multiple constituent affect the carrier generation and charge transport in multicomponent TCOs of In–Zn–Sn oxide
journal, January 2015

  • Lu, Ying-Bo; Yang, T. L.; Ling, Z. C.
  • Journal of Materials Chemistry C, Vol. 3, Issue 29
  • DOI: 10.1039/C5TC01256B

Investigation of mechanical properties of transparent conducting oxide thin films
journal, October 2003

Knoop Microhardness Anisotropy of Single-Crystal Cassiterite (SnO2)
journal, May 1991

Electronic structure of amorphous indium oxide transparent conductors
journal, September 2009

High performance thin film transistor with cosputtered amorphous Zn–In–Sn–O channel: Combinatorial approach
journal, August 2009

  • Ryu, Min Ki; Yang, Shinhyuk; Park, Sang-Hee Ko
  • Applied Physics Letters, Vol. 95, Issue 7
  • DOI: 10.1063/1.3206948

Thermal stability of amorphous Zn-In-Sn-O films
journal, September 2014

  • Proffit, Diana E.; Philippe, Thomas; Emery, Jonathan D.
  • Journal of Electroceramics, Vol. 34, Issue 2-3
  • DOI: 10.1007/s10832-014-9967-4

A review of nanoindentation continuous stiffness measurement technique and its applications
journal, February 2002

Zn–Ni–Co–O wide-band-gap p-type conductive oxides with high work functions
journal, August 2011

  • Zakutayev, A.; Perkins, J. D.; Parilla, P. A.
  • MRS Communications, Vol. 1, Issue 1
  • DOI: 10.1557/mrc.2011.9

Zinc‐indium‐oxide: A high conductivity transparent conducting oxide
journal, October 1995

  • Phillips, Julia M.; Cava, R. J.; Thomas, G. A.
  • Applied Physics Letters, Vol. 67, Issue 15
  • DOI: 10.1063/1.115118

Thermal transport properties of polycrystalline tin-doped indium oxide films
journal, April 2009

  • Ashida, Toru; Miyamura, Amica; Oka, Nobuto
  • Journal of Applied Physics, Vol. 105, Issue 7
  • DOI: 10.1063/1.3093684

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials
journal, June 2013

  • Green, Martin L.; Takeuchi, Ichiro; Hattrick-Simpers, Jason R.
  • Journal of Applied Physics, Vol. 113, Issue 23
  • DOI: 10.1063/1.4803530

Mechanical reliability of transparent conducting IZTO film electrodes for flexible panel displays
journal, July 2011

Electrical Properties and Reliability Analysis of Solution-Processed Indium Tin Zinc Oxide Thin Film Transistors with O<SUB>2</SUB>-Plasma Treatment
journal, October 2015

  • Ko, Sun Wook; Kim, Soon Kon; Kim, Jong Min
  • Journal of Nanoscience and Nanotechnology, Vol. 15, Issue 10
  • DOI: 10.1166/jnn.2015.11168

Subsolidus Phase Relationships in the ZnO-In 2 O 3 -SnO 2 System
journal, November 2008

  • Harvey, Steven P.; Poeppelmeier, Kenneth R.; Mason, Thomas O.
  • Journal of the American Ceramic Society, Vol. 91, Issue 11
  • DOI: 10.1111/j.1551-2916.2008.02686.x

Electrical properties and defect model of tin-doped indium oxide layers
journal, April 1982

  • Frank, G.; K�stlin, H.
  • Applied Physics A Solids and Surfaces, Vol. 27, Issue 4
  • DOI: 10.1007/BF00619080

Criteria for Choosing Transparent Conductors
journal, August 2000

Thermal Effect on Characteristics of IZTO Thin Films Deposited by Pulsed DC Magnetron Sputtering
journal, March 2011

  • Son, Dong-Jin; Ko, Yoon-Duk; Jung, Dong-Geun
  • Bulletin of the Korean Chemical Society, Vol. 32, Issue 3
  • DOI: 10.5012/bkcs.2011.32.3.847

Highly-Tunable Nickel Cobalt Oxide as a Low-Temperature P-Type Contact in Organic Photovoltaic Devices
journal, November 2012

  • Ndione, Paul F.; Garcia, Andres; Widjonarko, N. Edwin
  • Advanced Energy Materials, Vol. 3, Issue 4
  • DOI: 10.1002/aenm.201200742

Next-Generation Transparent Conducting Oxides for Photovoltaic Cells: an Overview
journal, January 2001

The Mechanical Reliability of Sputter-Coated Indium Tin Oxide Polyester Substrates for Flexible Display and Touchscreen Applications
journal, January 2001

  • Cairns, Darran R.; Paine, David C.; Crawford, Gregory P.
  • MRS Proceedings, Vol. 666
  • DOI: 10.1557/PROC-666-F3.24
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    Works referencing / citing this record:

    Recent Advances in Understanding the Structure and Properties of Amorphous Oxide Semiconductors
    journal, August 2017

    • Medvedeva, Julia E.; Buchholz, D. Bruce; Chang, Robert P. H.
    • Advanced Electronic Materials, Vol. 3, Issue 9
    • DOI: 10.1002/aelm.201700082
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      Table 1 (p. 9)table
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