Role of HfO2/SiO2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage

Papernov, Semyon; Kozlov, Alexei A.; Oliver, James B.; Smith, Chris; Jensen, Lars; Guenster, Stefan; Maedebach, Heinrich; Ristau, Detlev

doi:10.1117/1.OE.56.1.011004

Title: Role of HfO₂/SiO₂ thin-film interfaces in near-ultraviolet absorption and pulsed laser damage

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Abstract

Here, the role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO₂ and SiO₂ thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO₂ single-layer film and for a film containing seven narrow HfO₂ layers separated by SiO₂ layers. The seven-layer film was designed to have a total optical thickness of HfO₂ layers, equal to one wave at 355 nm and an E-field peak and average intensity similar to a single-layer HfO₂ film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO₂ film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO₂ film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure withmore »« less

Authors:

Papernov, Semyon ^[1]; Kozlov, Alexei A. ^[1]; Oliver, James B. ^[1]; Smith, Chris ^[1]; Jensen, Lars ^[2]; Guenster, Stefan ^[2]; Maedebach, Heinrich ^[2]; Ristau, Detlev ^[2]

Univ. of Rochester, Rochester, NY (United States)
Laser Zentrum Hannover e.V., Hannover (Germany)

Publication Date:: Fri Jul 15 00:00:00 EDT 2016

Research Org.:: Univ. of Rochester, NY (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1278446

Grant/Contract Number:: NA0001944

Resource Type:: Accepted Manuscript

Journal Name:: Optical Engineering

Additional Journal Information:: Journal Volume: 56; Journal Issue: 1; Journal ID: ISSN 0091-3286

Publisher:: SPIE

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; thin films; interfaces; absorption; laser damage

Citation Formats


                    Papernov, Semyon, Kozlov, Alexei A., Oliver, James B., Smith, Chris, Jensen, Lars, Guenster, Stefan, Maedebach, Heinrich, and Ristau, Detlev. Role of HfO2/SiO2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage.  United States: N. p., 2016. 
Web.  doi:10.1117/1.OE.56.1.011004.

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                    Papernov, Semyon, Kozlov, Alexei A., Oliver, James B., Smith, Chris, Jensen, Lars, Guenster, Stefan, Maedebach, Heinrich, & Ristau, Detlev. Role of HfO2/SiO2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage.  United States.  https://doi.org/10.1117/1.OE.56.1.011004

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                    Papernov, Semyon, Kozlov, Alexei A., Oliver, James B., Smith, Chris, Jensen, Lars, Guenster, Stefan, Maedebach, Heinrich, and Ristau, Detlev. Fri .  
"Role of HfO2/SiO2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage".  United States.  https://doi.org/10.1117/1.OE.56.1.011004.  https://www.osti.gov/servlets/purl/1278446.

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@article{osti_1278446,

  title        = {Role of HfO2/SiO2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage},

  author       = {Papernov, Semyon and Kozlov, Alexei A. and Oliver, James B. and Smith, Chris and Jensen, Lars and Guenster, Stefan and Maedebach, Heinrich and Ristau, Detlev},

  abstractNote = {Here, the role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similar to a single-layer HfO2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO2 film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the codeposition of HfO2 and SiO2 materials.},

  doi          = {10.1117/1.OE.56.1.011004},

  journal      = {Optical Engineering},

  number       = 1,

  volume       = 56,

  place        = {United States},

  year         = {Fri Jul 15 00:00:00 EDT 2016},

  month        = {Fri Jul 15 00:00:00 EDT 2016}

}

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Title: Role of HfO2/SiO2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage

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Title: Role of HfO₂/SiO₂ thin-film interfaces in near-ultraviolet absorption and pulsed laser damage