Laser conditioning and electronic defect measurements of HfO sub 2 and SiO sub 2 thin films

Conference · Mon Dec 17 00:00:00 EST 1990

OSTI ID:6350734

Kozlowski, M R; Staggs, M; Rainer, F ^[1]; Stathis, J H ^[2]

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1. Lawrence Livermore National Lab., CA (USA)
2. International Business Machines Corp., Yorktown Heights, NY (USA). Thomas J. Watson Research Center

Multilayer HfO{sub 2}/SiO{sub 2} high reflectors (HR) and polarizers show a permanent increase in their 1064-nm damage thresholds following laser conditioning at subthreshold fluences. Threshold increases of 2--3x are typical. In an effort to better understand the conditioning effect we have made laser conditioning and electronic property measurements on single layers of these two materials. The laser damage threshold of 1-{mu}m thick e-beam deposited SiO{sub 2} was increased by laser conditioning for wavelengths ranging from 355 to 1046 nm. The damage threshold of HfO{sub 2} single layers was not influenced by sub-threshold illumination. As-deposited thin films of a-SiO{sub 2} are known to contain paramagnetic electronic defects. We have used electron paramagnetic resonance (EPR) to study the concentrations and types of defects present in single layer and multilayer films of HfO{sub 2} and SiO{sub 2}. E{prime} and oxygen hole centers with concentrations on the order of 10{sup 17}/cm{sup 3} have been measured in the SiO{sub 2} layers. A previously unreported defect has been observed for HfO{sub 2}. The concentration of defects was studied both before and after laser conditioning and damage with 1064-nm photons. These electronic structure measurements are discussed in relation to an electronic defect model for laser conditioning of dielectric multilayers. 27 refs., 11 figs., 1 tab.

• Research Organization: Lawrence Livermore National Lab., CA (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 6350734
• Report Number(s): UCRL-JC-104883; CONF-9010287-2; ON: DE91006237
• Resource Relation: Conference: 22. boulder damage symposium, Boulder, CO (USA), 25-26 Oct 1990
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
36 MATERIALS SCIENCE
HAFNIUM OXIDES
ENERGY BEAM DEPOSITION
LASER MIRRORS
PHYSICAL RADIATION EFFECTS
SILICON OXIDES
DIELECTRIC MATERIALS
ELECTRON SPIN RESONANCE
ELECTRONIC STRUCTURE
INERTIAL CONFINEMENT
LASER RADIATION
MAGNETIC FIELDS
NOVA FACILITY
OPTICAL REFLECTION
REFLECTIVE COATINGS
REFLECTIVITY
TESTING
THIN FILMS
CHALCOGENIDES
COATINGS
CONFINEMENT
DEPOSITION
ELECTROMAGNETIC RADIATION
FILMS
HAFNIUM COMPOUNDS
MAGNETIC RESONANCE
MATERIALS
MIRRORS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PLASMA CONFINEMENT
RADIATION EFFECTS
RADIATIONS
REFLECTION
REFRACTORY METAL COMPOUNDS
RESONANCE
SILICON COMPOUNDS
SURFACE COATING
SURFACE PROPERTIES
TRANSITION ELEMENT COMPOUNDS
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360204 - Ceramics
Cermets
& Refractories- Physical Properties
360206 - Ceramics
Cermets
& Refractories- Radiation Effects