DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Influence of piezoelectric strain on the Raman spectra of BiFeO3 films deposited on PMN-PT substrates

Abstract

In this study, BiFeO3 epitaxial thin films were deposited on piezoelectric 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-PT) substrates with a conductive buffer layer (La0.7Sr0.3MnO3 or SrRuO3) using pulsed laser deposition. The calibration of the strain values induced by the electric field applied on the piezoelectric PMN-PT substrates was realised using X-Ray diffraction measurements. The method of piezoelectrically induced strain allows to obtain a quantitative correlation between strain and the shift of the Raman-active phonons, ruling out the influence of extrinsic factors, such as growth conditions, crystalline quality of substrates, or film thickness. Using the Poisson number for BiFeO3 one can determine the volume change induced by strain, and therefore the Gr neisen parameters for specific phonon modes.

Authors:
 [1];  [2];  [1];  [3];  [1]
  1. TU Bergakademie Freiberg, Freiberg (Germany)
  2. Martin-Luther-Univ., Halle (Germany); Institute for Metallic Materials, Dresden (Germany); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Martin-Luther-Univ., Halle (Germany); Institute for Metallic Materials, Dresden (Germany)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1238753
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 4; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; piezoelectric fields; thin film structure; epitaxy; phonons; buffer layers

Citation Formats

Himcinschi, Cameliu, Guo, Er -Jia, Talkenberger, Andreas, Dorr, Kathrin, and Kortus, Jens. Influence of piezoelectric strain on the Raman spectra of BiFeO3 films deposited on PMN-PT substrates. United States: N. p., 2016. Web. doi:10.1063/1.4940973.
Himcinschi, Cameliu, Guo, Er -Jia, Talkenberger, Andreas, Dorr, Kathrin, & Kortus, Jens. Influence of piezoelectric strain on the Raman spectra of BiFeO3 films deposited on PMN-PT substrates. United States. https://doi.org/10.1063/1.4940973
Himcinschi, Cameliu, Guo, Er -Jia, Talkenberger, Andreas, Dorr, Kathrin, and Kortus, Jens. Wed . "Influence of piezoelectric strain on the Raman spectra of BiFeO3 films deposited on PMN-PT substrates". United States. https://doi.org/10.1063/1.4940973. https://www.osti.gov/servlets/purl/1238753.
@article{osti_1238753,
title = {Influence of piezoelectric strain on the Raman spectra of BiFeO3 films deposited on PMN-PT substrates},
author = {Himcinschi, Cameliu and Guo, Er -Jia and Talkenberger, Andreas and Dorr, Kathrin and Kortus, Jens},
abstractNote = {In this study, BiFeO3 epitaxial thin films were deposited on piezoelectric 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-PT) substrates with a conductive buffer layer (La0.7Sr0.3MnO3 or SrRuO3) using pulsed laser deposition. The calibration of the strain values induced by the electric field applied on the piezoelectric PMN-PT substrates was realised using X-Ray diffraction measurements. The method of piezoelectrically induced strain allows to obtain a quantitative correlation between strain and the shift of the Raman-active phonons, ruling out the influence of extrinsic factors, such as growth conditions, crystalline quality of substrates, or film thickness. Using the Poisson number for BiFeO3 one can determine the volume change induced by strain, and therefore the Gr neisen parameters for specific phonon modes.},
doi = {10.1063/1.4940973},
journal = {Applied Physics Letters},
number = 4,
volume = 108,
place = {United States},
year = {Wed Jan 27 00:00:00 EST 2016},
month = {Wed Jan 27 00:00:00 EST 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Novel multifunctional materials based on oxide thin films and artificial heteroepitaxial multilayers
journal, August 2010

  • Opel, Matthias; Geprägs, Stephan; Menzel, Edwin P.
  • physica status solidi (a), Vol. 208, Issue 2
  • DOI: 10.1002/pssa.201026403

Advanced synthesis techniques and routes to new single-phase multiferroics
journal, October 2012

  • Martin, Lane W.; Schlom, Darrell G.
  • Current Opinion in Solid State and Materials Science, Vol. 16, Issue 5
  • DOI: 10.1016/j.cossms.2012.03.001

High-pressure Raman spectroscopy of nano-structured ABO3 perovskites: a case study of relaxor ferroelectrics
journal, January 2003

  • Kreisel, J.; Bouvier, P.
  • Journal of Raman Spectroscopy, Vol. 34, Issue 7-8
  • DOI: 10.1002/jrs.1032

Structural distortion and magnetism of BiFeO 3 epitaxial thin films: A Raman spectroscopy and neutron diffraction study
journal, March 2007


Raman and infrared spectra of multiferroic bismuth ferrite from first principles
journal, June 2007


Raman Spectroscopy of Ferroelectric Thin Films and Superlattices
journal, June 2008


Lattice dynamics of Eu1-xYxMnO3 (0 ≤ x ≤ 0.5)
journal, January 2010


Piezoelectric instability in 〈011〉-oriented Pb(B1/3IB2/3II)O3–PbTiO3 crystals
journal, August 2001

  • Viehland, D.; Amin, A.; Li, J. F.
  • Applied Physics Letters, Vol. 79, Issue 7
  • DOI: 10.1063/1.1392307

Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals
journal, August 1997

  • Park, Seung-Eek; Shrout, Thomas R.
  • Journal of Applied Physics, Vol. 82, Issue 4
  • DOI: 10.1063/1.365983

Piezoelectric coefficients of PMN-0.33PT single crystals
conference, January 2001

  • Cheng, K. C.; Chan, H. L. W.; Choy, C. L.
  • ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics (IEEE Cat. No.00CH37076)
  • DOI: 10.1109/ISAF.2000.942376

Phase diagram of the ferroelectric relaxor ( 1 x ) PbMg 1 / 3 Nb 2 / 3 O 3 x PbTiO 3
journal, August 2002


Applying uniform reversible strain to epitaxial oxide films
journal, April 2010

  • Biegalski, M. D.; Dörr, K.; Kim, D. H.
  • Applied Physics Letters, Vol. 96, Issue 15
  • DOI: 10.1063/1.3374323

Magnetism of the tensile-strain-induced tetragonal state of SrRuO 3 films
journal, October 2013


Magnetoelastic response of La 0.7 Sr 0.3 MnO 3 / SrTiO 3 superlattices to reversible strain
journal, August 2011


Strain controlled ferroelectric switching time of BiFeO 3 capacitors
journal, December 2012

  • Guo, E. J.; Dörr, K.; Herklotz, A.
  • Applied Physics Letters, Vol. 101, Issue 24
  • DOI: 10.1063/1.4772006

Tuning the switching time of BiFeO 3 capacitors by electrodes' conductivity
journal, July 2013

  • Guo, E. J.; Herklotz, A.; Roth, R.
  • Applied Physics Letters, Vol. 103, Issue 2
  • DOI: 10.1063/1.4813419

Observation of an unusual optical switching effect in relaxor ferroelectrics Pb(Mg 1/3 Nb 2/3 )O 3 -Pb(Zr 0.53, Ti 0.47 )O 3 transparent ceramics
journal, February 2014

  • Zhao, Wei; Ruan, Wei; Zeng, Jiangtao
  • Applied Physics Letters, Vol. 104, Issue 6
  • DOI: 10.1063/1.4865405

Abnormal electric-field-induced light scattering in Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 transparent ceramics
journal, March 2015

  • Zhou, Yibo; Zhao, Wei; Ruan, Wei
  • Applied Physics Letters, Vol. 106, Issue 12
  • DOI: 10.1063/1.4916514

Angular dispersion of oblique phonon modes in BiFeO 3 from micro-Raman scattering
journal, January 2011


Raman spectroscopic investigations of epitaxial BiFeO 3 thin films on rare earth scandate substrates: Raman investigations of epitaxial BiFeO 3 thin films
journal, August 2015

  • Talkenberger, Andreas; Vrejoiu, Ionela; Johann, Florian
  • Journal of Raman Spectroscopy, Vol. 46, Issue 12
  • DOI: 10.1002/jrs.4762

Substrate influence on the optical and structural properties of pulsed laser deposited BiFeO3 epitaxial films
journal, June 2010

  • Himcinschi, C.; Vrejoiu, I.; Friedrich, M.
  • Journal of Applied Physics, Vol. 107, Issue 12
  • DOI: 10.1063/1.3437059

Optical properties of epitaxial BiFeO 3 thin films grown on LaAlO 3
journal, January 2015

  • Himcinschi, Cameliu; Bhatnagar, Akash; Talkenberger, Andreas
  • Applied Physics Letters, Vol. 106, Issue 1
  • DOI: 10.1063/1.4905443

Theorie des festen Zustandes einatomiger Elemente
journal, January 1912


High-pressure phase transitions in BiFeO 3 : hydrostatic versus non-hydrostatic conditions
journal, May 2011


Effect of high pressure on multiferroic BiFeO 3
journal, May 2009


Effect of pressure on the band gap and the local FeO 6 environment in BiFeO 3
journal, April 2012

  • Gómez-Salces, Susana; Aguado, Fernando; Rodríguez, Fernando
  • Physical Review B, Vol. 85, Issue 14
  • DOI: 10.1103/PhysRevB.85.144109

Anharmonic phonons and magnons in BiFeO 3
journal, February 2012


Phase transition and thermodynamic properties of BiFeO 3 from first-principles calculations
journal, March 2013


High pressure Raman investigations of multiferroic BiFeO 3
journal, August 2009


Phonon anomalies near the magnetic phase transitions in BiFeO 3 thin films with rhombohedral R 3c symmetry
journal, April 2011

  • Singh, Manoj K.; Katiyar, Ram S.
  • Journal of Applied Physics, Vol. 109, Issue 7
  • DOI: 10.1063/1.3565191

Pressure effect on structural and vibrational properties of Sm-substituted BiFeO 3
journal, October 2013

  • Wu, Yu-Jie; Chen, Xiao-Kun; Zhang, Jing
  • Journal of Applied Physics, Vol. 114, Issue 15
  • DOI: 10.1063/1.4826069

Works referencing / citing this record:

Ferroelastic domain identification in BiFeO3 crystals using Raman spectroscopy
journal, January 2019


Ferroelastic domain identification in BiFeO3 crystals using Raman spectroscopy
journal, January 2019