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Title: Controllable piezoelectricity of Pb(Zr 0.2Ti 0.8)O 3 film via in situ misfit strain

Abstract

In this paper, the tetragonality (c/a) of a PbZr 0.2Ti 0.8O 3 (PZT) thin film on La 0.7Sr 0.3MnO 3/0.72Pb(Mg 1/3Nb 2/3)O 3-0.28PbTiO 3 (PMN-PT) substrates was controlled by applying an electric field on the PMN-PT substrate. The piezoelectric response of the PZT thin film under various biaxial strains was observed using time-resolved micro X-ray diffraction. The longitudinal piezoelectric coefficient (d 33) was reduced from 29.5 to 14.9 pm/V when the c/a ratio of the PZT film slightly changed from 1.051 to 1.056. Finally, our results demonstrate that the tetragonality of the PZT thin film plays a critical role in determining d 33, and in situ strain engineering using electromechanical substrate is useful in excluding the extrinsic effect resulting from the variation in the film thickness or the interface between substrate.

Authors:
 [1];  [2];  [3];  [1];  [1];  [4];  [5];  [1]
  1. Gwangju Inst. of Science and Technology (Korea, Republic of). School of Materials Science and Engineering
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Quantum Condensed Matter Division
  3. (Germany). Inst. for Physics
  4. Martin Luther Univ. of Halle-Wittenberg, Halle (Germany). Inst. for Physics
  5. Ulsan Inst. of Science and Technology (Korea, Republic of). School of Energy and Chemical Engineering
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Gwangju Inst. of Science and Technology (Korea, Republic of); Martin Luther Univ. of Halle-Wittenberg, Halle (Germany)
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program; National Research Foundation of Korea (NRF); Gwangju Inst. of Science and Technology (Korea, Republic of); POSCO TJ Park Foundation (Korea, Republic of); German Research Foundation (DFG)
Contributing Org.:
Ulsan Inst. of Science and Technology (Korea, Republic of)
OSTI Identifier:
1340448
Grant/Contract Number:  
AC05-00OR22725; NRF-2014R1A1A3053111; SFB 762
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 3; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; PZT films; piezoelectric fields; piezoelectric transducers; ferroelectric thin films; thin film structure

Citation Formats

Lee, Hyeon Jun, Guo, Er-Jia, Martin Luther Univ. of Halle-Wittenberg, Halle, Kwak, Jeong Hun, Hwang, Seung Hyun, Dörr, Kathrin, Lee, Jun Hee, and Young Jo, Ji. Controllable piezoelectricity of Pb(Zr0.2Ti0.8)O3 film via in situ misfit strain. United States: N. p., 2017. Web. doi:10.1063/1.4974450.
Lee, Hyeon Jun, Guo, Er-Jia, Martin Luther Univ. of Halle-Wittenberg, Halle, Kwak, Jeong Hun, Hwang, Seung Hyun, Dörr, Kathrin, Lee, Jun Hee, & Young Jo, Ji. Controllable piezoelectricity of Pb(Zr0.2Ti0.8)O3 film via in situ misfit strain. United States. doi:10.1063/1.4974450.
Lee, Hyeon Jun, Guo, Er-Jia, Martin Luther Univ. of Halle-Wittenberg, Halle, Kwak, Jeong Hun, Hwang, Seung Hyun, Dörr, Kathrin, Lee, Jun Hee, and Young Jo, Ji. Wed . "Controllable piezoelectricity of Pb(Zr0.2Ti0.8)O3 film via in situ misfit strain". United States. doi:10.1063/1.4974450. https://www.osti.gov/servlets/purl/1340448.
@article{osti_1340448,
title = {Controllable piezoelectricity of Pb(Zr0.2Ti0.8)O3 film via in situ misfit strain},
author = {Lee, Hyeon Jun and Guo, Er-Jia and Martin Luther Univ. of Halle-Wittenberg, Halle and Kwak, Jeong Hun and Hwang, Seung Hyun and Dörr, Kathrin and Lee, Jun Hee and Young Jo, Ji},
abstractNote = {In this paper, the tetragonality (c/a) of a PbZr0.2Ti0.8O3 (PZT) thin film on La0.7Sr0.3MnO3/0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-PT) substrates was controlled by applying an electric field on the PMN-PT substrate. The piezoelectric response of the PZT thin film under various biaxial strains was observed using time-resolved micro X-ray diffraction. The longitudinal piezoelectric coefficient (d33) was reduced from 29.5 to 14.9 pm/V when the c/a ratio of the PZT film slightly changed from 1.051 to 1.056. Finally, our results demonstrate that the tetragonality of the PZT thin film plays a critical role in determining d33, and in situ strain engineering using electromechanical substrate is useful in excluding the extrinsic effect resulting from the variation in the film thickness or the interface between substrate.},
doi = {10.1063/1.4974450},
journal = {Applied Physics Letters},
number = 3,
volume = 110,
place = {United States},
year = {2017},
month = {1}
}

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Works referenced in this record:

Critical thickness for ferroelectricity in perovskite ultrathin films
journal, April 2003

  • Junquera, Javier; Ghosez, Philippe
  • Nature, Vol. 422, Issue 6931, p. 506-509
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Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures
journal, March 2003