12 Search Results

Aerosol deposition (AD) is a kinetic spray process capable of depositing ceramic coatings at room temperature, but AD process development is generally a laborious exploration of a large process parameter space. Here, this paper presents a case study investigating whether laser-induced particle impact testing (LIPIT) could be applied to expedite development of an alumina (Al₂O₃) coating on nickel (Ni): Specifically, whether LIPIT measurements could predict critical velocities of adhesion on Ni and Al₂O₃, and the effect of ball milling the Al₂O₃ powder. Because LIPIT has a diffraction-limited lower bound on imageable particle size, the usefulness of Al₂O₃ powder agglomerates asmore » a proxy for single particles was additionally studied. Overall, LIPIT measurements and AD sprays agreed that ball milling dramatically improves adhesion. Additionally, LIPIT measurements of critical velocity of adhesion of Al₂O₃ powder agglomerates on Ni and Al₂O₃ substrates (150 meters per second [m/s] and 250 m/s, respectively) quantitatively agreed with predictions from a previously published model based on picoindentation and molecular dynamics simulations. Together, these findings support the established hypothesis that Al₂O₃ adheres via a dislocation-mediated mechanism in AD, that Al₂O₃ powder agglomerates adhere as individual constituent particles rather than collectively, and that, for this case study, LIPIT measurements were predictive of AD process parameters.« less

Y₃Fe₅O₁₂ (YIG) thin films are well known for their ferrimagnetic insulating property and low Gilbert damping coefficient (α), allowing them to be used for various spintronic applications and as magneto-optical isolators for photonic devices. Instead of doping, incorporation of plasmonic metals as nanoinclusions could be a promising route for improved magneto-optical coupling properties. In this work, YIG–Au nanocomposites have been deposited with ferrimagnetic insulating YIG as the matrix and Au nanoinclusions which introduce plasmonic absorption, optical anisotropy, and hyperbolic properties. Films with varying Au nanoinclusion densities have been processed and annealed to compare with the as-deposited ones. The films thatmore » had low Au nanoinclusion density and were annealed presented a lower magnetic damping coefficient of 2.84 × 10⁻⁴ than the pure YIG film (9.66 × 10⁻⁴). The as-deposited film with the highest Au density shows the strongest hyperbolic properties among all samples. These results demonstrate that both magnetic damping and optical properties can be tuned through deposition conditions in YIG–Au nanocomposite thin films, allowing for a balance of both properties. This YIG–Au nanocomposite system presents promising potential in next-generation opto-spintronic devices.« less

Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure and can be used to create novel devices by defining metallic regions whose boundaries have single-atom abruptness. Incompatibility with the thermal and lithography process requirements for gated silicon transistor manufacturing have inhibited exploration of both how APAM can enhance CMOS performance and how transistor manufacturing steps can accelerate the discovery of new APAM device concepts. In this work, we introduce an APAM process that enables direct integration into the middle of a transistor manufacturing workflow. We show that a process that combines sputtering and annealingmore » with a hardmask preserves a defining characteristic of APAM, a doping density far in excess of the solid solubility limit, while trading another, the atomic precision, for compatibility with manufacturing. The electrical characteristics of a chip combining a transistor with an APAM resistor show that the APAM module has only affected the transistor through the addition of a resistance and not by altering the transistor. This proof-of-concept demonstration also outlines the requirements and limitations of a unified APAM tool, which could be introduced into manufacturing environments, greatly expanding access to this technology and inspiring a new generation of devices with it.« less

Magnetic anisotropy is essential for many applications of ferromagnetic/ferrimagnetic materials, including permanent magnets and magnetic recording media. Attempts have been made recently to build up 3-D nanoparticle and quantum dot assemblies, however, it is not understood yet if a nanoparticle assembly can possess high magnetic anisotropy with low anisotropic materials. In this article, we report our discovery of high magnetic anisotropy resulted from Fe₃O₄ nanoparticle chains. We started with closely-packed nanoparticle assemblies of spherical Fe₃O₄ nanoparticles that exhibit low magnetocrystalline anisotropy and shape anisotropy, and corresponding negligible coercivity. When the nanoparticle assemblies are compressed under pressure, they form bundles ormore » arrays that consist of Fe₃O₄ chains with a length scale of several hundred nanometers. Magnetic measurements show that these Fe₃O₄ chain arrays possess a high uniaxial magnetic anisotropy (K_eff ~ 2.9×10⁵ J/m³) and significant magnetic coercivity. Our simulations reveal that interparticle magnetic dipolar interactions contribute to this type of superstructure magnetic anisotropy. This study demonstrates the feasibility and approaches to create “patterned” high magnetic anisotropy in nanoparticle superstructures/assemblies.« less

Magnetic dopants in three-dimensional topological insulators (TIs) offer a promising avenue for realizing the quantum anomalous Hall effect (QAHE) without the necessity for an external magnetic field. Understanding the relationship between site occupancy of magnetic dopant elements and their effect on macroscopic property is crucial for controlling the QAHE. By combining atomic-scale energy-dispersive X-ray spectroscopy (EDS) maps obtained by aberration-corrected scanning transmission electron microscopy (AC-STEM) and novel data processing methodologies, including semi-automatic lattice averaging and frame registration, we have determined the substitutional sites of Mn atoms within the 1.2% Mn-doped Sb₂Te₃ crystal. More importantly, the methodology developed in this studymore » extends beyond Mn-doped Sb₂Te₃ to other quantum materials, traditional semiconductors, and even electron irradiation sensitive materials.« less

Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to improve thermal management in lateral devices; however, engineering challenges remain with the bonding process and characterizing the bond quality for vertical device architectures. Here, in this study, integration of these two materials is achieved by room-temperature compression bonding centimeter-scale GaN and a diamond die via an intermetallic bonding layer of Ti/Au. Recent attempts at GaN/diamond bonding have utilized a modified surface activation bonding (SAB) method, which requires Ar fast atom bombardment immediately followed by bonding within the same tool under ultrahigh vacuum (UHV) conditions. Themore » method presented here does not require a dedicated SAB tool yet still achieves bonding via a room-temperature metal–metal compression process. Imaging of the buried interface and the total bonding area is achieved via transmission electron microscopy (TEM) and confocal acoustic scanning microscopy (C-SAM), respectively. The thermal transport quality of the bond is extracted from spatially resolved frequency-domain thermoreflectance (FDTR) with the bonded areas boasting a thermal boundary conductance of >100 MW/m²·K. Additionally, Raman maps of GaN near the GaN–diamond interface reveal a low level of compressive stress, <80 MPa, in well-bonded regions. FDTR and Raman were coutilized to map these buried interfaces and revealed some poor thermally bonded areas bordered by high-stress regions, highlighting the importance of spatial sampling for a complete picture of bond quality. Overall, this work demonstrates a novel method for thermal management in vertical GaN devices that maintains low intrinsic stresses while boasting high thermal boundary conductances.« less

Ferroelectric HfO₂-based materials hold great potential for the widespread integration of ferroelectricity into modern electronics due to their compatibility with existing Si technology. Earlier work indicated that a nanometre grain size was crucial for the stabilization of the ferroelectric phase. This constraint, associated with a high density of structural defects, obscures an insight into the intrinsic ferroelectricity of HfO₂-based materials. Here we demonstrate that stable and enhanced polarization can be achieved in epitaxial HfO₂ films with a high degree of structural order (crystallinity). In this work, an out-of-plane polarization value of 50 μC cm^–2 has been observed at room temperaturemore » in Y-doped HfO₂(111) epitaxial thin films, with an estimated full value of intrinsic polarization of 64 μC cm^–2, which is in close agreement with density functional theory calculations. The crystal structure of films reveals the $$Pca2_1$$ orthorhombic phase with small rhombohedral distortion, underlining the role of the structural constraint in stabilizing the ferroelectric phase. Our results suggest that it could be possible to exploit the intrinsic ferroelectricity of HfO₂-based materials, optimizing their performance in device applications.« less

Metals subjected to irradiation environments undergo microstructural evolution and concomitant degradation, yet the nanoscale mechanisms for such evolution remain elusive. Here, we combine in situ heavy ion irradiation, atomic resolution microscopy, and atomistic simulation to elucidate how radiation damage and interfacial defects interplay to control grain boundary (GB) motion. While classical notions of boundary evolution under irradiation rest on simple ideas of curvature-driven motion, the reality is far more complex. Focusing on an ion-irradiated Pt Σ3 GB, we show how this boundary evolves by the motion of 120° facet junctions separating nanoscale {112} facets. Our analysis considers the short- andmore » mid-range ion interactions, which roughen the facets and induce local motion, and longer-range interactions associated with interfacial disconnections, which accommodate the intergranular misorientation. We suggest how climb of these disconnections could drive coordinated facet junction motion. These findings emphasize that both local and longer-range, collective interactions are important to understanding irradiation-induced interfacial evolution.« less

Two-dimensional (2D) materials with robust ferromagnetic behavior have attracted great interest because of their potential applications in next-generation nanoelectronic devices. Aside from graphene and transition metal dichalcogenides, Bi-based layered oxide materials are a group of prospective candidates due to their superior room-temperature multiferroic response. In this work, an ultrathin Bi₃Fe₂Mn₂O_10+δ layered supercell (BFMO322 LS) structure was deposited on an LaAlO₃ (LAO) (001) substrate using pulsed laser deposition. Microstructural analysis suggests that a layered supercell (LS) structure consisting of two-layer-thick Bi–O slabs and two-layer-thick Mn/Fe–O octahedra slabs was formed on top of the pseudo-perovskite interlayer (IL). A robust saturation magnetization valuemore » of 129 and 96 emu cm^-3 is achieved in a 12.3 nm thick film in the in-plane (IP) and out-of-plane (OP) directions, respectively. The ferromagnetism, dielectric permittivity, and optical bandgap of the ultrathin BFMO films can be effectively tuned by thickness and morphology variation. In addition, the anisotropy of all ultrathin BFMO films switches from OP dominating to IP dominating as the thickness increases. This study demonstrates the ultrathin BFMO film with tunable multifunctionalities as a promising candidate for novel integrated spintronic devices.« less

Magnetoelectric systems could be used to develop magnetoelectric random access memory and microsensor devices. One promising system is the two-phase 3-1-type multiferroic nanocomposite in which a one-dimensional magnetic column is embedded in a three-dimensional ferroelectric matrix. However, it suffers from a number of limitations including unwanted leakage currents and the need for biasing with a magnetic field. Here we show that the addition of an antiferromagnet to a 3-1-type multiferroic nanocomposite can lead to a large, self-biased magnetoelectric effect at room temperature. Our three-phase system is composed of a ferroelectric Na_0.5Bi_0.5TiO₃ matrix in which ferrimagnetic NiFe₂O₄ nanocolumns coated with antiferromagneticmore » p-type NiO are embedded. This system, which is self-assembled, exhibits a magnetoelectric coefficient of up to 1.38 × 10^–9 s m^–1, which is large enough to switch the magnetic anisotropy from the easy axis (K_eff = 0.91 × 10⁴ J m^–3) to the easy plane (K_eff = –1.65 × 10⁴ J m^–3).« less