Atomic-Scale Characterization of Dilute Dopants in Topological Insulators via STEM–EDS Using Registration and Cell Averaging Techniques

Kang, Min-Chul; Islam, Farhan; Yan, Jiaqiang; Vaknin, David; McQueeney, Robert J.; Lu, Ping; Zhou, Lin

doi:10.1093/mam/ozae078

Title: Atomic-Scale Characterization of Dilute Dopants in Topological Insulators via STEM–EDS Using Registration and Cell Averaging Techniques

Journal Article · Wed Aug 28 00:00:00 UTC 2024 · Microscopy and Microanalysis

DOI: https://doi.org/10.1093/mam/ozae078 · OSTI ID:2475178

^[1]; Islam, Farhan ^[2]; Yan, Jiaqiang ^[3]; Vaknin, David ^[1]; McQueeney, Robert J. ^[4];

^[5];

^[2]

Ames Laboratory (AMES), Ames, IA (United States)
Ames Laboratory (AMES), Ames, IA (United States); Iowa State University, Ames, IA (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Ames Laboratory (AMES), Ames, IA (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Magnetic dopants in three-dimensional topological insulators (TIs) offer a promising avenue for realizing the quantum anomalous Hall effect (QAHE) without the necessity for an external magnetic field. Understanding the relationship between site occupancy of magnetic dopant elements and their effect on macroscopic property is crucial for controlling the QAHE. By combining atomic-scale energy-dispersive X-ray spectroscopy (EDS) maps obtained by aberration-corrected scanning transmission electron microscopy (AC-STEM) and novel data processing methodologies, including semi-automatic lattice averaging and frame registration, we have determined the substitutional sites of Mn atoms within the 1.2% Mn-doped Sb₂Te₃ crystal. More importantly, the methodology developed in this study extends beyond Mn-doped Sb₂Te₃ to other quantum materials, traditional semiconductors, and even electron irradiation sensitive materials.

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Research Organization:: Ames Laboratory (AMES), Ames, IA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: AC02-07CH11358; NA0003525

OSTI ID:: 2475178

Report Number(s):: IS-J--11,428

Journal Information:: Microscopy and Microanalysis, Journal Name: Microscopy and Microanalysis Journal Issue: 5 Vol. 30; ISSN 1431-9276

Publisher:: Microscopy Society of America (MSA)Copyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
aberration-corrected scanning transmission electron microscopy (AC-STEM)
atomic-scale EDS mapping
dilute magnet
lattice averaging
non-rigid frame registration

Title: Atomic-Scale Characterization of Dilute Dopants in Topological Insulators via STEM–EDS Using Registration and Cell Averaging Techniques

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