Tunable quantum anomalous Hall effects in ferromagnetic van der Waals heterostructures
- Beijing Academy of Quantum Information Sciences, Beijing (China); Tsinghua University, Beijing (China)
- Sun Yat-sen University, Guangzhou (China)
- Fudan University, Shanghai (China)
- Tsinghua University, Beijing (China)
- Beijing Academy of Quantum Information Sciences, Beijing (China); Tsinghua University, Beijing (China); Frontier Science Center for Quantum Information, Beijing (China)
- University of California, Irvine, CA (United States)
- Tsinghua University, Beijing (China); Frontier Science Center for Quantum Information, Beijing (China); Tencent Technology (Shenzhen) Co. Ltd, Shenzhen (China); RIKEN Center for Emergent Matter Science (CEMS), Wako (Japan)
The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = ±1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = ±3 can be realized in a single material candidate, which is composed of van der Waals (vdW) coupled Bi and MnBi2Te4 monolayers. The switching between different phases of QAHE can be controlled in multiple ways, such as applying strain or (weak) magnetic field or twisting the vdW materials. The prediction of an experimentally available material system hosting robust, highly tunable QAHE will stimulate great research interest in the field. Our work opens a new avenue for the realization of tunable QAHE and provides a practical material platform for the development of topological electronics.
- Research Organization:
- Univ. of California, Irvine, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Key Research and Development Program of China; National Natural Science Foundation of China (NSFC); National Science Fund for Distinguished Young Scholars; USDOE
- Grant/Contract Number:
- FG02-05ER46237; 2018YFA0307100; 2018YFA0305603; 52388201; 12025405; 12104518; 11874035
- OSTI ID:
- 2283601
- Alternate ID(s):
- OSTI ID: 2263268; OSTI ID: 2472184
- Journal Information:
- National Science Review, Vol. 11, Issue 3; ISSN 2095-5138
- Publisher:
- China Science PublishingCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Highly Efficient Room-Temperature Spin-Orbit-Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet
Patterning-Induced Ferromagnetism of Fe3GeTe2 van der Waals Materials beyond Room Temperature