Tunable quantum anomalous Hall effects in ferromagnetic van der Waals heterostructures
Abstract
ABSTRACT The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = ±1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = ±3 can be realized in a single material candidate, which is composed of van der Waals (vdW) coupled Bi and MnBi2Te4 monolayers. The switching between different phases of QAHE can be controlled in multiple ways, such as applying strain or (weak) magnetic field or twisting the vdW materials. The prediction of an experimentally available material system hosting robust, highly tunable QAHE will stimulate great research interest in the field. Our work opens a new avenue for the realization of tunable QAHE and provides a practical material platform for the development of topological electronics.
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 2283601
- Alternate Identifier(s):
- OSTI ID: 2263268
- Resource Type:
- Published Article
- Journal Name:
- National Science Review
- Additional Journal Information:
- Journal Name: National Science Review Journal Volume: 11 Journal Issue: 3; Journal ID: ISSN 2095-5138
- Publisher:
- Oxford University Press
- Country of Publication:
- China
- Language:
- English
Citation Formats
Xue, Feng, Hou, Yusheng, Wang, Zhe, Xu, Zhiming, He, Ke, Wu, Ruqian, Xu, Yong, and Duan, Wenhui. Tunable quantum anomalous Hall effects in ferromagnetic van der Waals heterostructures. China: N. p., 2023.
Web. doi:10.1093/nsr/nwad151.
Xue, Feng, Hou, Yusheng, Wang, Zhe, Xu, Zhiming, He, Ke, Wu, Ruqian, Xu, Yong, & Duan, Wenhui. Tunable quantum anomalous Hall effects in ferromagnetic van der Waals heterostructures. China. https://doi.org/10.1093/nsr/nwad151
Xue, Feng, Hou, Yusheng, Wang, Zhe, Xu, Zhiming, He, Ke, Wu, Ruqian, Xu, Yong, and Duan, Wenhui. Thu .
"Tunable quantum anomalous Hall effects in ferromagnetic van der Waals heterostructures". China. https://doi.org/10.1093/nsr/nwad151.
@article{osti_2283601,
title = {Tunable quantum anomalous Hall effects in ferromagnetic van der Waals heterostructures},
author = {Xue, Feng and Hou, Yusheng and Wang, Zhe and Xu, Zhiming and He, Ke and Wu, Ruqian and Xu, Yong and Duan, Wenhui},
abstractNote = {ABSTRACT The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = ±1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = ±3 can be realized in a single material candidate, which is composed of van der Waals (vdW) coupled Bi and MnBi2Te4 monolayers. The switching between different phases of QAHE can be controlled in multiple ways, such as applying strain or (weak) magnetic field or twisting the vdW materials. The prediction of an experimentally available material system hosting robust, highly tunable QAHE will stimulate great research interest in the field. Our work opens a new avenue for the realization of tunable QAHE and provides a practical material platform for the development of topological electronics.},
doi = {10.1093/nsr/nwad151},
journal = {National Science Review},
number = 3,
volume = 11,
place = {China},
year = {Thu May 25 00:00:00 EDT 2023},
month = {Thu May 25 00:00:00 EDT 2023}
}
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