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Title: Self-Intercalation Tunable Interlayer Exchange Coupling in a Synthetic van der Waals Antiferromagnet

Journal Article · · Advanced Functional Materials
 [1];  [2];  [3];  [4];  [5];  [6];  [7];  [8];  [9];  [4];  [4];  [8];  [4];  [6];  [7];  [7];  [10];  [10];  [4];  [7] more »; ORCiD logo [11] « less
  1. Nanjing University (China); Southern University of Science and Technology, Shenzhen (China); OSTI
  2. Nanjing University (China); Royal Holloway, University of London (RHUL), Egham (United Kingdom)
  3. Nanjing University of Posts and Telecommunications Nanjing (China)
  4. University of Missouri, Columbia, MO (United States)
  5. Nanjing Tech University (China)
  6. Missouri University of Science and Technology, Rolla, MO (United States)
  7. Southern University of Science and Technology, Shenzhen (China)
  8. Chinese Academy of Sciences, Beijing (China)
  9. Royal Holloway, University of London (RHUL), Egham (United Kingdom)
  10. Nanjing University (China)
  11. Nanjing University (China); University of York (United Kingdom)

One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it has proven challenging, due in part to the complicated fabrication process and undesired adsorbates as well as the significantly deteriorated ferromagnetism at atomic layers. Here, the engineering of the antiferromagnetic (AFM) interlayer exchange coupling between atomically thin yet ferromagnetic CrTe2 layers in an ultra-high vacuum-free 2D magnetic crystal, Cr5Te8 is reported. By self-introducing interstitial Cr atoms in the vdW gaps, the emergent AFM ordering and the resultant giant magnetoresistance effect are induced. A large negative magnetoresistance (10%) with a plateau-like feature is revealed, which is consistent with the AFM interlayer coupling between the adjacent CrTe2main layers in a temperature window of 30 K below the Néel temperature. Notably, the AFM state has a relatively weak interlayer exchange coupling, allowing a switching between the interlayer AFM and ferromagnetic states at moderate magnetic fields. Here this work represents a new route to engineering low-power devices that underpin the emerging spintronic technologies, and an ideal laboratory to study 2D magnetism.

Research Organization:
University of Missouri, Columbia, MO (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Key Research and Development Program of China; National Basic Research Program of China; National Natural Science Foundation of China; Natural Science Foundation of Jiangsu Province of China; Engineering and Physical Sciences Research Council (EPSRC); Leverhulme Trust; Royal Society; China Postdoctoral Science Foundation; National Science Foundation (NSF); Natural Science Foundation of China
Grant/Contract Number:
SC0019114
OSTI ID:
1976189
Journal Information:
Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 32 Vol. 32; ISSN 1616-301X
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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