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1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings
Abstract
Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( RONA ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, RONA is 0.23 mΩ∙ cm2 at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’s figure of merit is >5.97 GW/cm2. Temperature-dependent reverse I – V measurements were performed and show a positive temperature coefficient of 0.42 V/K, indicating the avalanche capability of reverse breakdown. Further analysis with the Poole-Frenkel model on the temperature-dependent measurement suggested that a trap-assisted tunneling process contributed to the reverse leakage current. Floating guard rings (FGRs) formed by nitrogen implantation serve as an effective edge termination technique in these GaN PIN rectifiers, resulting in uniform performance in both forward and reverse bias.
- Authors:
-
[1];
[1];
[1];
[1];
[1]
- Georgia Institute of Technology, Atlanta, GA (United States)
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- SixPoint Materials, Buellton, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Science Foundation (NSF)
- OSTI Identifier:
- 1996471
- Report Number(s):
- LLNL-JRNL-844039
Journal ID: ISSN 0018-9383; 1067145
- Grant/Contract Number:
- AC52-07NA27344; ECCS-154217
- Resource Type:
- Accepted Manuscript
- Journal Name:
- IEEE Transactions on Electron Devices
- Additional Journal Information:
- Journal Volume: 70; Journal Issue: 9; Journal ID: ISSN 0018-9383
- Publisher:
- IEEE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; Gallium nitride (GaN); PIN rectifiers; power devices; ion implantation; field guard rings; edge termination
Citation Formats
Cho, Minkyu, Xu, Zhiyu, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Daeumer, Matthias A., Yoo, Jae-Hyuck, Shao, Qinghui, Laurence, Ted A., Key, Daryl, Hashimoto, Tadao, Letts, Edward, Dupuis, Russell D., and Shen, Shyh-Chiang. 1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings. United States: N. p., 2023.
Web. doi:10.1109/ted.2023.3295767.
Cho, Minkyu, Xu, Zhiyu, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Daeumer, Matthias A., Yoo, Jae-Hyuck, Shao, Qinghui, Laurence, Ted A., Key, Daryl, Hashimoto, Tadao, Letts, Edward, Dupuis, Russell D., & Shen, Shyh-Chiang. 1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings. United States. https://doi.org/10.1109/ted.2023.3295767
Cho, Minkyu, Xu, Zhiyu, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Daeumer, Matthias A., Yoo, Jae-Hyuck, Shao, Qinghui, Laurence, Ted A., Key, Daryl, Hashimoto, Tadao, Letts, Edward, Dupuis, Russell D., and Shen, Shyh-Chiang. Tue .
"1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings". United States. https://doi.org/10.1109/ted.2023.3295767.
@article{osti_1996471,
title = {1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings},
author = {Cho, Minkyu and Xu, Zhiyu and Bakhtiary-Noodeh, Marzieh and Detchprohm, Theeradetch and Daeumer, Matthias A. and Yoo, Jae-Hyuck and Shao, Qinghui and Laurence, Ted A. and Key, Daryl and Hashimoto, Tadao and Letts, Edward and Dupuis, Russell D. and Shen, Shyh-Chiang},
abstractNote = {Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( RONA ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, RONA is 0.23 mΩ∙ cm2 at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’s figure of merit is >5.97 GW/cm2. Temperature-dependent reverse I – V measurements were performed and show a positive temperature coefficient of 0.42 V/K, indicating the avalanche capability of reverse breakdown. Further analysis with the Poole-Frenkel model on the temperature-dependent measurement suggested that a trap-assisted tunneling process contributed to the reverse leakage current. Floating guard rings (FGRs) formed by nitrogen implantation serve as an effective edge termination technique in these GaN PIN rectifiers, resulting in uniform performance in both forward and reverse bias.},
doi = {10.1109/ted.2023.3295767},
journal = {IEEE Transactions on Electron Devices},
number = 9,
volume = 70,
place = {United States},
year = {Tue Jul 25 00:00:00 EDT 2023},
month = {Tue Jul 25 00:00:00 EDT 2023}
}
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