1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Zhu, Mingda; Song, Bo; Qi, Meng; Hu, Zongyang; Nomoto, Kazuki; Yan, Xiaodong; Cao, Yu; Johnson, Wayne; Kohn, Erhard; Jena, Debdeep; Xing, Grace Huili

doi:10.1109/LED.2015.2404309

Title: 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Abstract

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance R_ON,SP (5.12 mΩ · cm²), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/R_ON,SP of 727 MW·cm². The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

Authors:

Zhu, Mingda ^[1]; Song, Bo ^[2]; Qi, Meng ^[1]; Hu, Zongyang ^[1]; Nomoto, Kazuki ^[1]; Yan, Xiaodong ^[1]; Cao, Yu ^[3]; Johnson, Wayne ^[3]; Kohn, Erhard ^[1]; Jena, Debdeep ^[2]; Xing, Grace Huili ^[2]

Univ. of Notre Dame, IN (United States)
Cornell Univ., Ithaca, NY (United States)
IQE, Westborough, MA (United States)

Publication Date:: Mon Feb 16 00:00:00 EST 2015

Research Org.:: Univ. of Notre Dame, IN (United States)

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Contributing Org.:: Cornell University, Ithaca, NY (United States); IQE/HRL, Westborough, MA (United States)

OSTI Identifier:: 1170275

Report Number(s):: DOE-UND-AR0000454.1
Journal ID: ISSN 0741-3106; TRN: US1500478

Grant/Contract Number:: AR0000454

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Electron Device Letters

Additional Journal Information:: Journal Volume: 36; Journal Issue: 4; Journal ID: ISSN 0741-3106

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; Schottky barrier diode, GaN on Silicon, Breakdown voltage, High voltage device, AlGaN/GaN, Field plate

Citation Formats


                    Zhu, Mingda, Song, Bo, Qi, Meng, Hu, Zongyang, Nomoto, Kazuki, Yan, Xiaodong, Cao, Yu, Johnson, Wayne, Kohn, Erhard, Jena, Debdeep, and Xing, Grace Huili. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon.  United States: N. p., 2015. 
Web.  doi:10.1109/LED.2015.2404309.

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                    Zhu, Mingda, Song, Bo, Qi, Meng, Hu, Zongyang, Nomoto, Kazuki, Yan, Xiaodong, Cao, Yu, Johnson, Wayne, Kohn, Erhard, Jena, Debdeep, & Xing, Grace Huili. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon.  United States.  https://doi.org/10.1109/LED.2015.2404309

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                    Zhu, Mingda, Song, Bo, Qi, Meng, Hu, Zongyang, Nomoto, Kazuki, Yan, Xiaodong, Cao, Yu, Johnson, Wayne, Kohn, Erhard, Jena, Debdeep, and Xing, Grace Huili. Mon .  
"1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon".  United States.  https://doi.org/10.1109/LED.2015.2404309.  https://www.osti.gov/servlets/purl/1170275.

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@article{osti_1170275,

  title        = {1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon},

  author       = {Zhu, Mingda and Song, Bo and Qi, Meng and Hu, Zongyang and Nomoto, Kazuki and Yan, Xiaodong and Cao, Yu and Johnson, Wayne and Kohn, Erhard and Jena, Debdeep and Xing, Grace Huili},

  abstractNote = {In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 mΩ · cm2), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.},

  doi          = {10.1109/LED.2015.2404309},

  journal      = {IEEE Electron Device Letters},

  number       = 4,

  volume       = 36,

  place        = {United States},

  year         = {Mon Feb 16 00:00:00 EST 2015},

  month        = {Mon Feb 16 00:00:00 EST 2015}

}

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Works referencing / citing this record:

Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures
journal, November 2019

Kabouche, Riad; Abid, Idriss; Püsche, Roland
physica status solidi (a), Vol. 217, Issue 7
DOI: 10.1002/pssa.201900687

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
journal, August 2017

Baines, Yannick; Buckley, Julien; Biscarrat, Jérôme
Scientific Reports, Vol. 7, Issue 1
DOI: 10.1038/s41598-017-08307-0

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy
journal, December 2015

Qi, Meng; Nomoto, Kazuki; Zhu, Mingda
Applied Physics Letters, Vol. 107, Issue 23
DOI: 10.1063/1.4936891

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
journal, December 2015

Hu, Zongyang; Nomoto, Kazuki; Song, Bo
Applied Physics Letters, Vol. 107, Issue 24
DOI: 10.1063/1.4937436

High breakdown electric field in β-Ga ₂ O ₃ /graphene vertical barristor heterostructure
journal, January 2018

Yan, Xiaodong; Esqueda, Ivan S.; Ma, Jiahui
Applied Physics Letters, Vol. 112, Issue 3
DOI: 10.1063/1.5002138

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
journal, February 2018

Bryan, Isaac; Bryan, Zachary; Washiyama, Shun
Applied Physics Letters, Vol. 112, Issue 6
DOI: 10.1063/1.5011984

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current
journal, January 2018

Ma, Jun; Matioli, Elison
Applied Physics Letters, Vol. 112, Issue 5
DOI: 10.1063/1.5012866

Device Design Assessment of GaN Merged P-i-N Schottky Diodes
journal, December 2019

Zhang, Yuliang; Lu, Xing; Zou, Xinbo
Electronics, Vol. 8, Issue 12
DOI: 10.3390/electronics8121550

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
text, January 2017

Baines, Yannick; Buckley, Julien; Biscarrat, Jérôme
arXiv
DOI: 10.48550/arxiv.1704.08505

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Similar Records

Title: 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Abstract

Citation Formats

Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures journal, November 2019

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact journal, August 2017

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy journal, December 2015

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown journal, December 2015

High breakdown electric field in β-Ga 2 O 3 /graphene vertical barristor heterostructure journal, January 2018

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD journal, February 2018

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current journal, January 2018

Device Design Assessment of GaN Merged P-i-N Schottky Diodes journal, December 2019

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact text, January 2017

Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures
journal, November 2019

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
journal, August 2017

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journal, December 2015

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journal, January 2018

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
journal, February 2018

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current
journal, January 2018

Device Design Assessment of GaN Merged P-i-N Schottky Diodes
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text, January 2017