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Title: Effects of electron doping level on minority carrier lifetimes in n -type mid-wave infrared InAs/InAs1−xSbx type-II superlattices

Abstract

The minority carrier lifetime (τMC) and equilibrium electron concentration (i.e., the doping level, n0) are both important values that directly determine diffusion current in infrared photodetectors utilizing n-type absorbing regions. Here, time-resolved microwave reflectance measurements are used to non-destructively measure both of these values in mid-wave infrared InAs/InAs1−xSbx type-II superlattices with varying n-type doping levels between 2×1014 cm−3 and 2×1016 cm−3. The measured data are analyzed using carrier recombination theory to determine the doping level ranges where Shockley-Read-Hall (SRH), radiative, and Auger recombination limit τMC. The optimal doping level, which minimizes dark current, is experimentally determined and corresponds to the electron density at which τMC switches from SRH limited to Auger limited behavior. A comparison of two InAs/InAs1−xSbx photodetectors of different equilibrium electron densities demonstrates a decrease in dark current for a doping level near the optimal n0τMC product.

Authors:
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Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1985571
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 109 Journal Issue: 26; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Kadlec, E. A., Olson, B. V., Goldflam, M. D., Kim, J. K., Klem, J. F., Hawkins, S. D., Coon, W. T., Cavaliere, M. A., Tauke-Pedretti, A., Fortune, T. R., Harris, C. T., and Shaner, E. A. Effects of electron doping level on minority carrier lifetimes in n -type mid-wave infrared InAs/InAs1−xSbx type-II superlattices. United States: N. p., 2016. Web. doi:10.1063/1.4973352.
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Kadlec, E. A., Olson, B. V., Goldflam, M. D., Kim, J. K., Klem, J. F., Hawkins, S. D., Coon, W. T., Cavaliere, M. A., Tauke-Pedretti, A., Fortune, T. R., Harris, C. T., & Shaner, E. A. Effects of electron doping level on minority carrier lifetimes in n -type mid-wave infrared InAs/InAs1−xSbx type-II superlattices. United States. https://doi.org/10.1063/1.4973352
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Kadlec, E. A., Olson, B. V., Goldflam, M. D., Kim, J. K., Klem, J. F., Hawkins, S. D., Coon, W. T., Cavaliere, M. A., Tauke-Pedretti, A., Fortune, T. R., Harris, C. T., and Shaner, E. A. Wed . "Effects of electron doping level on minority carrier lifetimes in n -type mid-wave infrared InAs/InAs1−xSbx type-II superlattices". United States. https://doi.org/10.1063/1.4973352.
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@article{osti_1985571,
title = {Effects of electron doping level on minority carrier lifetimes in n -type mid-wave infrared InAs/InAs1−xSbx type-II superlattices},
author = {Kadlec, E. A. and Olson, B. V. and Goldflam, M. D. and Kim, J. K. and Klem, J. F. and Hawkins, S. D. and Coon, W. T. and Cavaliere, M. A. and Tauke-Pedretti, A. and Fortune, T. R. and Harris, C. T. and Shaner, E. A.},
abstractNote = {The minority carrier lifetime (τMC) and equilibrium electron concentration (i.e., the doping level, n0) are both important values that directly determine diffusion current in infrared photodetectors utilizing n-type absorbing regions. Here, time-resolved microwave reflectance measurements are used to non-destructively measure both of these values in mid-wave infrared InAs/InAs1−xSbx type-II superlattices with varying n-type doping levels between 2×1014 cm−3 and 2×1016 cm−3. The measured data are analyzed using carrier recombination theory to determine the doping level ranges where Shockley-Read-Hall (SRH), radiative, and Auger recombination limit τMC. The optimal doping level, which minimizes dark current, is experimentally determined and corresponds to the electron density at which τMC switches from SRH limited to Auger limited behavior. A comparison of two InAs/InAs1−xSbx photodetectors of different equilibrium electron densities demonstrates a decrease in dark current for a doping level near the optimal n0τMC product.},
doi = {10.1063/1.4973352},
journal = {Applied Physics Letters},
number = 26,
volume = 109,
place = {United States},
year = {Wed Dec 28 00:00:00 EST 2016},
month = {Wed Dec 28 00:00:00 EST 2016}
}
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