Intensity- and temperature- dependent carrier recombination in InAs/In(As1-xSbx) type-II superlattices

Olson, Benjamin Varberg; Kadlec, Emil Andrew; Kim, Jin K.; Klem, John F.; Hawkins, Samuel D.; Shaner, Eric A.; Flatte, Michael E.

doi:10.1103/PhysRevApplied.3.044010

Title: Intensity- and temperature- dependent carrier recombination in InAs/In(As_1-xSb_x) type-II superlattices

Abstract

Our time-resolved measurements for carrier recombination are reported as a midwave infrared InAs/InAs_0.66Sb_0.34 type-II superlattice (T2SL) function of pump intensity and sample temperature. By including the T2SL doping level in the analysis, the Shockley-Read-Hall (SRH), radiative, and Auger recombination components of the carrier lifetime are uniquely distinguished at each temperature. SRH is the limiting recombination mechanism for excess carrier densities less than the doping level (the low-injection regime) and temperatures less than 175 K. A SRH defect energy of 95 meV, either below the T2SL conduction-band edge or above the T2SL valence-band edge, is identified. Auger recombination limits the carrier lifetimes for excess carrier densities greater than the doping level (the high-injection regime) for all temperatures tested. Additionally, at temperatures greater than 225 K, Auger recombination also limits the low-injection carrier lifetime due to the onset of the intrinsic temperature range and large intrinsic carrier densities. Radiative recombination is found to not have a significant contribution to the total lifetime for all temperatures and injection regimes, with the data implying a photon recycling factor of 15. Using the measured lifetime data, diffusion currents are calculated and compared to calculated Hg_1-xCd_xTe dark current, indicating that the T2SL can have a lowermore »« less

Authors:

Olson, Benjamin Varberg ^[1]; Kadlec, Emil Andrew ^[1]; Kim, Jin K. ^[1]; Klem, John F. ^[1]; Hawkins, Samuel D. ^[1]; Shaner, Eric A. ^[1]; Flatte, Michael E. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of Iowa, Iowa City, IA (United States)

Publication Date:: Fri Apr 17 00:00:00 EDT 2015

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1235266

Report Number(s):: SAND-2015-0613J
Journal ID: ISSN 2331-7019; 562489

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Applied

Additional Journal Information:: Journal Volume: 03; Journal Issue: 04; Journal ID: ISSN 2331-7019

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Olson, Benjamin Varberg, Kadlec, Emil Andrew, Kim, Jin K., Klem, John F., Hawkins, Samuel D., Shaner, Eric A., and Flatte, Michael E. Intensity- and temperature- dependent carrier recombination in InAs/In(As1-xSbx) type-II superlattices.  United States: N. p., 2015. 
Web.  doi:10.1103/PhysRevApplied.3.044010.

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                    Olson, Benjamin Varberg, Kadlec, Emil Andrew, Kim, Jin K., Klem, John F., Hawkins, Samuel D., Shaner, Eric A., & Flatte, Michael E. Intensity- and temperature- dependent carrier recombination in InAs/In(As1-xSbx) type-II superlattices.  United States.  https://doi.org/10.1103/PhysRevApplied.3.044010

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                    Olson, Benjamin Varberg, Kadlec, Emil Andrew, Kim, Jin K., Klem, John F., Hawkins, Samuel D., Shaner, Eric A., and Flatte, Michael E. Fri .  
"Intensity- and temperature- dependent carrier recombination in InAs/In(As1-xSbx) type-II superlattices".  United States.  https://doi.org/10.1103/PhysRevApplied.3.044010.  https://www.osti.gov/servlets/purl/1235266.

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@article{osti_1235266,

  title        = {Intensity- and temperature- dependent carrier recombination in InAs/In(As1-xSbx) type-II superlattices},

  author       = {Olson, Benjamin Varberg and Kadlec, Emil Andrew and Kim, Jin K. and Klem, John F. and Hawkins, Samuel D. and Shaner, Eric A. and Flatte, Michael E.},

  abstractNote = {Our time-resolved measurements for carrier recombination are reported as a midwave infrared InAs/InAs0.66Sb0.34 type-II superlattice (T2SL) function of pump intensity and sample temperature. By including the T2SL doping level in the analysis, the Shockley-Read-Hall (SRH), radiative, and Auger recombination components of the carrier lifetime are uniquely distinguished at each temperature. SRH is the limiting recombination mechanism for excess carrier densities less than the doping level (the low-injection regime) and temperatures less than 175 K. A SRH defect energy of 95 meV, either below the T2SL conduction-band edge or above the T2SL valence-band edge, is identified. Auger recombination limits the carrier lifetimes for excess carrier densities greater than the doping level (the high-injection regime) for all temperatures tested. Additionally, at temperatures greater than 225 K, Auger recombination also limits the low-injection carrier lifetime due to the onset of the intrinsic temperature range and large intrinsic carrier densities. Radiative recombination is found to not have a significant contribution to the total lifetime for all temperatures and injection regimes, with the data implying a photon recycling factor of 15. Using the measured lifetime data, diffusion currents are calculated and compared to calculated Hg1-xCdxTe dark current, indicating that the T2SL can have a lower dark current with mitigation of the SRH defect states. Our results illustrate the potential for InAs/InAs1-xSbx T2SLs as absorbers in infrared photodetectors.},

  doi          = {10.1103/PhysRevApplied.3.044010},

  journal      = {Physical Review Applied},

  number       = 04,

  volume       = 03,

  place        = {United States},

  year         = {Fri Apr 17 00:00:00 EDT 2015},

  month        = {Fri Apr 17 00:00:00 EDT 2015}

}

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Title: Intensity- and temperature- dependent carrier recombination in InAs/In(As1-xSbx) type-II superlattices

Abstract

Citation Formats

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Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe journal, May 2011

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Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials journal, August 2010

Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence journal, December 2010

Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices journal, January 2014

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Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control journal, April 2013

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Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence journal, September 2013

Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics journal, September 1957

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Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells journal, June 2014

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Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors journal, July 1974

Characterization of multiple deep level systems in semiconductor junctions by admittance measurements journal, February 1974

Below bandgap optical absorption in tellurium-doped GaSb journal, July 2005

The study of charge carrier kinetics in semiconductors by microwave conductivity measurements journal, November 1986

Intensity‐dependent minority‐carrier lifetime in III‐V semiconductors due to saturation of recombination centers journal, July 1991

Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice journal, March 2014

Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices journal, July 2014

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Measurement of the Auger recombination rate in p -type 0.54 eV GaInAsSb by time-resolved photoluminescence journal, October 2003

Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes journal, December 1995

Auger recombination dynamics of Hg0.795Cd0.205Te in the high excitation regime journal, July 1997

Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy journal, June 1990

Design of Phosphorus-Containing MWIR Type-II Superlattices for Infrared Photon Detectors journal, September 2013

Auger lifetime enhancement in InAs–Ga 1− x In x Sb superlattices journal, June 1994

Semiconductors: Data Handbook book, January 2004

Radiative lifetime in semiconductors for infrared detection journal, May 1983

Radiative lifetime in semiconductors for infrared detection journal, November 1986

Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms journal, November 2014

Interpreting mid-wave infrared MWIR HgCdTe photodetectors journal, March 2012

Energy gap versus alloy composition and temperature in Hg 1− x Cd x Te journal, October 1982

Semiconductors: Data Handbook journal, August 2004

Auger effect in semiconductors journal, January 1959

Energy gap versus alloy composition and temperature in Hg 1 − x Cd x Te journal, December 1983

Auger Effect in Semiconductors journal, May 1955

Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors journal, June 2019

Enhancement of radiation tolerance in GaAs/AlGaAs core–shell and InP nanowires journal, April 2018

Photo-excited carrier relaxation dynamics in two-dimensional InSe flakes journal, December 2019

Title: Intensity- and temperature- dependent carrier recombination in InAs/In(As_1-xSb_x) type-II superlattices

Fundamental physics of infrared detector materials
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Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
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Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices
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Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence
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Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices
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Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control
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Carrier recombination lifetime characterization of molecular beam epitaxially grown HgCdTe
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Antimonide Type-II “W” Photodiodes with Long-Wave Infrared R 0 A Comparable to HgCdTe
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Minority carrier lifetimes in ideal InGaSb/InAs superlattices
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Theory and modeling of type-II strained-layer superlattice detectors
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Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization
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Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence
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Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
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Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys
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Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells
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Temperature dependence of Auger recombination in a multilayer narrow-band-gap superlattice
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Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
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Characterization of multiple deep level systems in semiconductor junctions by admittance measurements
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Below bandgap optical absorption in tellurium-doped GaSb
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The study of charge carrier kinetics in semiconductors by microwave conductivity measurements
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Intensity‐dependent minority‐carrier lifetime in III‐V semiconductors due to saturation of recombination centers
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Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice
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Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices
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Recombination processes in semiconductors
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Quantum efficiency in InSb
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Auger lifetime in InAs, InAsSb, and InAsSb‐InAlAsSb quantum wells
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Carrier recombination rates in narrow-gap ${I n A s / G a}_{1 - x} {In}_{x} Sb$ -based superlattices
journal, February 1999

Auger recombination in narrow-gap semiconductor superlattices incorporating antimony
journal, December 2002

Measurement of the Auger recombination rate in p -type 0.54 eV GaInAsSb by time-resolved photoluminescence
journal, October 2003

Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes
journal, December 1995

Auger recombination dynamics of Hg0.795Cd0.205Te in the high excitation regime
journal, July 1997

Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy
journal, June 1990

Design of Phosphorus-Containing MWIR Type-II Superlattices for Infrared Photon Detectors
journal, September 2013

Auger lifetime enhancement in InAs–Ga _{1− x} In _x Sb superlattices
journal, June 1994

Semiconductors: Data Handbook
book, January 2004

Radiative lifetime in semiconductors for infrared detection
journal, May 1983

Radiative lifetime in semiconductors for infrared detection
journal, November 1986

Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms
journal, November 2014

Interpreting mid-wave infrared MWIR HgCdTe photodetectors
journal, March 2012

Energy gap versus alloy composition and temperature in Hg _{1− x} Cd _x Te
journal, October 1982

Semiconductors: Data Handbook
journal, August 2004

Auger effect in semiconductors
journal, January 1959

Energy gap versus alloy composition and temperature in Hg ₁ _{− x} Cd _x Te
journal, December 1983

Auger Effect in Semiconductors
journal, May 1955

Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors
journal, June 2019

Enhancement of radiation tolerance in GaAs/AlGaAs core–shell and InP nanowires
journal, April 2018

Photo-excited carrier relaxation dynamics in two-dimensional InSe flakes
journal, December 2019