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Title: Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

Abstract

We present that temperature-dependent measurements of carrier recombination rates using a time-resolved optical pump-probe technique are reported for mid-wave infrared InAs/InAs1-xSbx type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions, a 16 K band-gap of ~235 ± 10 meV was achieved for five unintentionally and four intentionally doped T2SLs. Carrier lifetimes were determined by fitting lifetime models based on Shockley-Read-Hall (SRH), radiative, and Auger recombination processes to the temperature and excess carrier density dependent data. The minority carrier (MC), radiative, and Auger lifetimes were observed to generally increase with increasing antimony content and decreasing layer thickness for the unintentionally doped T2SLs. The MC lifetime is limited by SRH processes at temperatures below 200 K in the unintentionally doped T2SLs. The extracted SRH defect energy levels were found to be near mid-bandgap. Additionally, it is observed that the MC lifetime is limited by Auger recombination in the intentionally doped T2SLs with doping levels greater than n ~1016 cm-3.

Authors:
 [1]; ORCiD logo [2];  [2];  [2];  [2];  [2];  [1]; ORCiD logo [1]
  1. Univ. of Iowa, Iowa City, IA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1496990
Report Number(s):
SAND-2015-3986J
Journal ID: ISSN 0021-8979; 672043
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 12; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Aytac, Yigit, Olson, Benjamin Varberg, Kim, Jin K., Shaner, Eric A., Hawkins, Samuel D., Klem, John F., Flatte, Michael E., and Boggoss, Thomas F. Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices. United States: N. p., 2015. Web. doi:10.1063/1.4931419.
Aytac, Yigit, Olson, Benjamin Varberg, Kim, Jin K., Shaner, Eric A., Hawkins, Samuel D., Klem, John F., Flatte, Michael E., & Boggoss, Thomas F. Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices. United States. doi:10.1063/1.4931419.
Aytac, Yigit, Olson, Benjamin Varberg, Kim, Jin K., Shaner, Eric A., Hawkins, Samuel D., Klem, John F., Flatte, Michael E., and Boggoss, Thomas F. Tue . "Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices". United States. doi:10.1063/1.4931419. https://www.osti.gov/servlets/purl/1496990.
@article{osti_1496990,
title = {Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices},
author = {Aytac, Yigit and Olson, Benjamin Varberg and Kim, Jin K. and Shaner, Eric A. and Hawkins, Samuel D. and Klem, John F. and Flatte, Michael E. and Boggoss, Thomas F.},
abstractNote = {We present that temperature-dependent measurements of carrier recombination rates using a time-resolved optical pump-probe technique are reported for mid-wave infrared InAs/InAs1-xSbx type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions, a 16 K band-gap of ~235 ± 10 meV was achieved for five unintentionally and four intentionally doped T2SLs. Carrier lifetimes were determined by fitting lifetime models based on Shockley-Read-Hall (SRH), radiative, and Auger recombination processes to the temperature and excess carrier density dependent data. The minority carrier (MC), radiative, and Auger lifetimes were observed to generally increase with increasing antimony content and decreasing layer thickness for the unintentionally doped T2SLs. The MC lifetime is limited by SRH processes at temperatures below 200 K in the unintentionally doped T2SLs. The extracted SRH defect energy levels were found to be near mid-bandgap. Additionally, it is observed that the MC lifetime is limited by Auger recombination in the intentionally doped T2SLs with doping levels greater than n ~1016 cm-3.},
doi = {10.1063/1.4931419},
journal = {Journal of Applied Physics},
number = 12,
volume = 118,
place = {United States},
year = {2015},
month = {9}
}

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Cited by: 8 works
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Figures / Tables:

FIG. 1 FIG. 1: Photoluminescence spectra of the five unintentionally doped (left panel) and four intentionally doped (right panel) InAs/InAsSb T2SLs at 16 K.

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    Works referencing / citing this record:

    Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors
    journal, June 2019


    Analysis of III–V Superlattice nBn Device Characteristics
    journal, April 2016

    • Rhiger, David R.; Smith, Edward P.; Kolasa, Borys P.
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