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Title: The effect of dopant concentration and annealing treatments on N-type Iodine doped CdTe

Abstract

We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 1017 cm-3 to 1019 cm-3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray (XPS) photoelectron spectroscopy (XPS), X-ray diffraction (XRD), photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100% donor activation (n ≈ 2×1018 cm-3), which is close to the room temperature solubility limit of iodine. Furthermore, this leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancies-related defects on electrical self-compensation.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1];  [1];  [2]; ORCiD logo [2];  [1];  [1];  [1];  [1]
+ Show Author Affiliations
  1. Washington State University, Pullman, WA (United States)
  2. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
Washington State Univ., Pullman, WA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1983956
Alternate Identifier(s):
OSTI ID: 1999680
Grant/Contract Number:  
EE0009365; AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Alloys and Compounds
Additional Journal Information:
Journal Volume: 960; Journal ID: ISSN 0925-8388
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; CdTe; iodine doped; annealing; Hall-effect; crystal growth; time-resolved photoluminescence

Citation Formats

Shang, Jing, Murugesan, Magesh, Bigbee-Hansen, Samuel, Swain, Santosh K., Duenow, Joel N., Johnston, Steve, Beckman, Scott P., Walker, Harvey H., Antonio, Raine W., and McCloy, John S. The effect of dopant concentration and annealing treatments on N-type Iodine doped CdTe. United States: N. p., 2023. Web. doi:10.1016/j.jallcom.2023.170625.
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Shang, Jing, Murugesan, Magesh, Bigbee-Hansen, Samuel, Swain, Santosh K., Duenow, Joel N., Johnston, Steve, Beckman, Scott P., Walker, Harvey H., Antonio, Raine W., & McCloy, John S. The effect of dopant concentration and annealing treatments on N-type Iodine doped CdTe. United States. https://doi.org/10.1016/j.jallcom.2023.170625
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Shang, Jing, Murugesan, Magesh, Bigbee-Hansen, Samuel, Swain, Santosh K., Duenow, Joel N., Johnston, Steve, Beckman, Scott P., Walker, Harvey H., Antonio, Raine W., and McCloy, John S. Thu . "The effect of dopant concentration and annealing treatments on N-type Iodine doped CdTe". United States. https://doi.org/10.1016/j.jallcom.2023.170625.
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@article{osti_1983956,
title = {The effect of dopant concentration and annealing treatments on N-type Iodine doped CdTe},
author = {Shang, Jing and Murugesan, Magesh and Bigbee-Hansen, Samuel and Swain, Santosh K. and Duenow, Joel N. and Johnston, Steve and Beckman, Scott P. and Walker, Harvey H. and Antonio, Raine W. and McCloy, John S.},
abstractNote = {We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 1017 cm-3 to 1019 cm-3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray (XPS) photoelectron spectroscopy (XPS), X-ray diffraction (XRD), photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100% donor activation (n ≈ 2×1018 cm-3), which is close to the room temperature solubility limit of iodine. Furthermore, this leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancies-related defects on electrical self-compensation.},
doi = {10.1016/j.jallcom.2023.170625},
journal = {Journal of Alloys and Compounds},
number = ,
volume = 960,
place = {United States},
year = {Thu May 18 00:00:00 EDT 2023},
month = {Thu May 18 00:00:00 EDT 2023}
}
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Journal Article:
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This content will become publicly available on May 18, 2024
Publisher's Version of Record
https://doi.org/10.1016/j.jallcom.2023.170625
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