Experimental Study of Acceptor Removal in UFSD
Abstract
The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. In this study, the effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.
- Authors:
-
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- Univ. of California, Santa Cruz, CA (United States)
- National Institute for Nuclear Physics (INFN), Torino (Italy); Universita del Piemonte Orientale (Italy)
- National Institute for Nuclear Physics (INFN), Torino (Italy)
- Universita del Piemonte Orientale (Italy)
- Universita del Studie Torino (Italy)
- National Institute for Nuclear Physics (INFN), Torino (Italy); Universita del Studie Torino (Italy)
- Jozef Stefan Inst. (IJS), Ljubljana (Slovenia)
- Publication Date:
- Research Org.:
- Univ. of California, Santa Cruz, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC); European Research Council (ERC); Slovenian Research Agency
- OSTI Identifier:
- 1849514
- Alternate Identifier(s):
- OSTI ID: 1658425
- Grant/Contract Number:
- FG02-04ER41286; 654168; 669529; UFSD669529; J1-1699; P1-0135
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Additional Journal Information:
- Journal Volume: 983; Journal Issue: C; Journal ID: ISSN 0168-9002
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 73 NUCLEAR PHYSICS AND RADIATION PHYSICS; instruments & instrumentation; nuclear science & technology; physics; ultra-fast silicon detectors; low-gain avalanche detectors; radiation damage; acceptor removal; correlation C-V and charge collection
Citation Formats
Jin, Y., Ren, H., Christie, S., Galloway, Z., Gee, C., Labitan, C., Lockerby, M., Martinez-McKinney, F., Mazza, S. M., Padilla, R., Sadrozinski, H. F. -W., Schumm, B., Seiden, A., Wilder, M., Wyatt, W., Zhao, Y., Arcidiacono, R., Cartiglia, N., Ferrero, M., Mandurrino, M., Siviero, F., Sola, V., Tornago, M., Cindro, V., Howard, A., Kramberger, G., Mandić, I., and Mikuž, M. Experimental Study of Acceptor Removal in UFSD. United States: N. p., 2020.
Web. doi:10.1016/j.nima.2020.164611.
Jin, Y., Ren, H., Christie, S., Galloway, Z., Gee, C., Labitan, C., Lockerby, M., Martinez-McKinney, F., Mazza, S. M., Padilla, R., Sadrozinski, H. F. -W., Schumm, B., Seiden, A., Wilder, M., Wyatt, W., Zhao, Y., Arcidiacono, R., Cartiglia, N., Ferrero, M., Mandurrino, M., Siviero, F., Sola, V., Tornago, M., Cindro, V., Howard, A., Kramberger, G., Mandić, I., & Mikuž, M. Experimental Study of Acceptor Removal in UFSD. United States. https://doi.org/10.1016/j.nima.2020.164611
Jin, Y., Ren, H., Christie, S., Galloway, Z., Gee, C., Labitan, C., Lockerby, M., Martinez-McKinney, F., Mazza, S. M., Padilla, R., Sadrozinski, H. F. -W., Schumm, B., Seiden, A., Wilder, M., Wyatt, W., Zhao, Y., Arcidiacono, R., Cartiglia, N., Ferrero, M., Mandurrino, M., Siviero, F., Sola, V., Tornago, M., Cindro, V., Howard, A., Kramberger, G., Mandić, I., and Mikuž, M. Mon .
"Experimental Study of Acceptor Removal in UFSD". United States. https://doi.org/10.1016/j.nima.2020.164611. https://www.osti.gov/servlets/purl/1849514.
@article{osti_1849514,
title = {Experimental Study of Acceptor Removal in UFSD},
author = {Jin, Y. and Ren, H. and Christie, S. and Galloway, Z. and Gee, C. and Labitan, C. and Lockerby, M. and Martinez-McKinney, F. and Mazza, S. M. and Padilla, R. and Sadrozinski, H. F. -W. and Schumm, B. and Seiden, A. and Wilder, M. and Wyatt, W. and Zhao, Y. and Arcidiacono, R. and Cartiglia, N. and Ferrero, M. and Mandurrino, M. and Siviero, F. and Sola, V. and Tornago, M. and Cindro, V. and Howard, A. and Kramberger, G. and Mandić, I. and Mikuž, M.},
abstractNote = {The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. In this study, the effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.},
doi = {10.1016/j.nima.2020.164611},
journal = {Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment},
number = C,
volume = 983,
place = {United States},
year = {Mon Sep 07 00:00:00 EDT 2020},
month = {Mon Sep 07 00:00:00 EDT 2020}
}
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