One-dimensional edge contact to encapsulated MoS2 with a superconductor

Seredinski, A.; Arnault, E. G.; Costa, V. Z.; Zhao, L.; Larson, T. F. Q.; Watanabe, K.; Taniguchi, T.; Amet, F.; Newaz, A. K. M.; Finkelstein, G.

doi:10.1063/5.0045009

Title: One-dimensional edge contact to encapsulated MoS₂ with a superconductor

Abstract

Establishing ohmic contact to van der Waals semiconductors such as MoS₂ is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS₂ with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS₂ has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 K, which has ramifications for future fabrication recipes.

Authors:

^[1];

^[2];

^[3];

^[2]; Larson, T. F. Q. ^[2];

^[4]; Taniguchi, T. ^[4]; Amet, F. ^[5];

^[3];

^[2]

Wentworth Inst. of Technology, Boston, MA (United States); Duke Univ., Durham, NC (United States)
Duke Univ., Durham, NC (United States)
San Francisco State Univ., CA (United States)
National Inst. for Materials Science, Ibaraki (Japan)
Appalachian State Univ., Boone, NC (United States)

Publication Date:: Wed Apr 07 00:00:00 EDT 2021

Research Org.:: Duke Univ., Durham, NC (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1846859

Alternate Identifier(s):: OSTI ID: 1774713

Grant/Contract Number:: SC0002765; de-sc0002765

Resource Type:: Accepted Manuscript

Journal Name:: AIP Advances

Additional Journal Information:: Journal Volume: 11; Journal Issue: 4; Journal ID: ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Superconductivity; 2D materials; Ohmic contacts; Superconductors; Superconducting devices; Spin-orbit interactions; Schottky barriers; Contact impedance; Semiconductors; Electrical components; Electronic devices; Graphene

Citation Formats


                    Seredinski, A., Arnault, E. G., Costa, V. Z., Zhao, L., Larson, T. F. Q., Watanabe, K., Taniguchi, T., Amet, F., Newaz, A. K. M., and Finkelstein, G. One-dimensional edge contact to encapsulated MoS2 with a superconductor.  United States: N. p., 2021. 
Web.  doi:10.1063/5.0045009.

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                    Seredinski, A., Arnault, E. G., Costa, V. Z., Zhao, L., Larson, T. F. Q., Watanabe, K., Taniguchi, T., Amet, F., Newaz, A. K. M., & Finkelstein, G. One-dimensional edge contact to encapsulated MoS2 with a superconductor.  United States.  https://doi.org/10.1063/5.0045009

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                    Seredinski, A., Arnault, E. G., Costa, V. Z., Zhao, L., Larson, T. F. Q., Watanabe, K., Taniguchi, T., Amet, F., Newaz, A. K. M., and Finkelstein, G. Wed .  
"One-dimensional edge contact to encapsulated MoS2 with a superconductor".  United States.  https://doi.org/10.1063/5.0045009.  https://www.osti.gov/servlets/purl/1846859.

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@article{osti_1846859,

  title        = {One-dimensional edge contact to encapsulated MoS2 with a superconductor},

  author       = {Seredinski, A. and Arnault, E. G. and Costa, V. Z. and Zhao, L. and Larson, T. F. Q. and Watanabe, K. and Taniguchi, T. and Amet, F. and Newaz, A. K. M. and Finkelstein, G.},

  abstractNote = {Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 K, which has ramifications for future fabrication recipes.},

  doi          = {10.1063/5.0045009},

  journal      = {AIP Advances},

  number       = 4,

  volume       = 11,

  place        = {United States},

  year         = {Wed Apr 07 00:00:00 EDT 2021},

  month        = {Wed Apr 07 00:00:00 EDT 2021}

}

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Works referenced in this record:

Immunity to Contact Scaling in MoS ₂ Transistors Using in Situ Edge Contacts
journal, July 2019

Cheng, Zhihui; Yu, Yifei; Singh, Shreya
Nano Letters, Vol. 19, Issue 8
DOI: 10.1021/acs.nanolett.9b01355

Evidence for two-dimensional Ising superconductivity in gated MoS2
journal, November 2015

Lu, J. M.; Zheliuk, O.; Leermakers, I.
Science, Vol. 350, Issue 6266
DOI: 10.1126/science.aab2277

One-Dimensional Edge Contacts to a Monolayer Semiconductor
journal, September 2019

Jain, Achint; Szabó, Áron; Parzefall, Markus
Nano Letters, Vol. 19, Issue 10
DOI: 10.1021/acs.nanolett.9b02166

Gate-induced superconductivity in atomically thin MoS2 crystals
journal, January 2016

Costanzo, Davide; Jo, Sanghyun; Berger, Helmuth
Nature Nanotechnology, Vol. 11, Issue 4
DOI: 10.1038/nnano.2015.314

Anomalous Lattice Vibrations of Single- and Few-Layer MoS ₂
journal, March 2010

Lee, Changgu; Yan, Hugen; Brus, Louis E.
ACS Nano, Vol. 4, Issue 5
DOI: 10.1021/nn1003937

Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS ₂ Field-Effect-Transistors
journal, July 2015

Liu, Wei; Sarkar, Deblina; Kang, Jiahao
ACS Nano, Vol. 9, Issue 8
DOI: 10.1021/nn506512j

Low-Temperature Ohmic Contact to Monolayer MoS ₂ by van der Waals Bonded Co/ h -BN Electrodes
journal, July 2017

Cui, Xu; Shih, En-Min; Jauregui, Luis A.
Nano Letters, Vol. 17, Issue 8
DOI: 10.1021/acs.nanolett.7b01536

Ballistic Josephson junctions in edge-contacted graphene
journal, July 2015

Calado, V. E.; Goswami, S.; Nanda, G.
Nature Nanotechnology, Vol. 10, Issue 9
DOI: 10.1038/nnano.2015.156

2D transition metal dichalcogenides
journal, June 2017

Manzeli, Sajedeh; Ovchinnikov, Dmitry; Pasquier, Diego
Nature Reviews Materials, Vol. 2, Issue 8
DOI: 10.1038/natrevmats.2017.33

Superconducting Dome in a Gate-Tuned Band Insulator
journal, November 2012

Ye, J. T.; Zhang, Y. J.; Akashi, R.
Science, Vol. 338, Issue 6111
DOI: 10.1126/science.1228006

Electrical contacts to two-dimensional semiconductors
journal, November 2015

Allain, Adrien; Kang, Jiahao; Banerjee, Kaustav
Nature Materials, Vol. 14, Issue 12
DOI: 10.1038/nmat4452

Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere
journal, July 2015

Cao, Y.; Mishchenko, A.; Yu, G. L.
Nano Letters, Vol. 15, Issue 8
DOI: 10.1021/acs.nanolett.5b00648

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS ₂
journal, August 2013

Baugher, Britton W. H.; Churchill, Hugh O. H.; Yang, Yafang
Nano Letters, Vol. 13, Issue 9
DOI: 10.1021/nl401916s

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
journal, April 2015

Cui, Xu; Lee, Gwan-Hyoung; Kim, Young Duck
Nature Nanotechnology, Vol. 10, Issue 6
DOI: 10.1038/nnano.2015.70

Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
journal, December 2013

Kośmider, K.; González, J. W.; Fernández-Rossier, J.
Physical Review B, Vol. 88, Issue 24
DOI: 10.1103/PhysRevB.88.245436

Two-dimensional atomic crystals
journal, July 2005

Novoselov, K. S.; Jiang, D.; Schedin, F.
Proceedings of the National Academy of Sciences, Vol. 102, Issue 30, p. 10451-10453
DOI: 10.1073/pnas.0502848102

Room-Temperature Spin Hall Effect in Graphene/MoS ₂ van der Waals Heterostructures
journal, January 2019

Safeer, C. K.; Ingla-Aynés, Josep; Herling, Franz
Nano Letters, Vol. 19, Issue 2
DOI: 10.1021/acs.nanolett.8b04368

Intrinsic electrical transport and performance projections of synthetic monolayer MoS 2 devices
journal, November 2016

Smithe, Kirby K. H.; English, Chris D.; Suryavanshi, Saurabh V.
2D Materials, Vol. 4, Issue 1
DOI: 10.1088/2053-1583/4/1/011009

Thickness dependent interlayer transport in vertical MoS ₂ Josephson junctions
journal, July 2016

Island, Joshua O.; Steele, Gary A.; Zant, Herre S. J. van der
2D Materials, Vol. 3, Issue 3
DOI: 10.1088/2053-1583/3/3/031002

Spin–orbit-driven band inversion in bilayer graphene by the van der Waals proximity effect
journal, June 2019

Island, J. O.; Cui, X.; Lewandowski, C.
Nature, Vol. 571, Issue 7763
DOI: 10.1038/s41586-019-1304-2

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
journal, January 2012

Kim, Sunkook; Konar, Aniruddha; Hwang, Wan-Sik
Nature Communications, Vol. 3, Issue 1
DOI: 10.1038/ncomms2018

Electric-field-induced superconductivity at 9.4 K in a layered transition metal disulphide MoS ₂
journal, July 2012

Taniguchi, Kouji; Matsumoto, Akiyo; Shimotani, Hidekazu
Applied Physics Letters, Vol. 101, Issue 4
DOI: 10.1063/1.4740268

Physics of Semiconductor Devices
book, January 2007

Sze, S. M.; Ng, Kwok K.
DOI: 10.1002/0470068329

Single-layer MoS₂ transistors
journal, January 2011

Radisavljevic, B.; Radenovic, A.; Brivio, J.
Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
DOI: 10.1038/nnano.2010.279

Highly Stable, Dual-Gated MoS ₂ Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
journal, June 2015

Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck
ACS Nano, Vol. 9, Issue 7
DOI: 10.1021/acsnano.5b01341

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Title: One-dimensional edge contact to encapsulated MoS2 with a superconductor

Abstract

Citation Formats

Immunity to Contact Scaling in MoS 2 Transistors Using in Situ Edge Contacts journal, July 2019

Evidence for two-dimensional Ising superconductivity in gated MoS2 journal, November 2015

One-Dimensional Edge Contacts to a Monolayer Semiconductor journal, September 2019

Gate-induced superconductivity in atomically thin MoS2 crystals journal, January 2016

Anomalous Lattice Vibrations of Single- and Few-Layer MoS 2 journal, March 2010

Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS 2 Field-Effect-Transistors journal, July 2015

Low-Temperature Ohmic Contact to Monolayer MoS 2 by van der Waals Bonded Co/ h -BN Electrodes journal, July 2017

Ballistic Josephson junctions in edge-contacted graphene journal, July 2015

2D transition metal dichalcogenides journal, June 2017

Superconducting Dome in a Gate-Tuned Band Insulator journal, November 2012

Electrical contacts to two-dimensional semiconductors journal, November 2015

Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere journal, July 2015

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS 2 journal, August 2013

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform journal, April 2015

Large spin splitting in the conduction band of transition metal dichalcogenide monolayers journal, December 2013

Two-dimensional atomic crystals journal, July 2005

Room-Temperature Spin Hall Effect in Graphene/MoS 2 van der Waals Heterostructures journal, January 2019

Intrinsic electrical transport and performance projections of synthetic monolayer MoS 2 devices journal, November 2016

Thickness dependent interlayer transport in vertical MoS 2 Josephson junctions journal, July 2016

Spin–orbit-driven band inversion in bilayer graphene by the van der Waals proximity effect journal, June 2019

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals journal, January 2012

Electric-field-induced superconductivity at 9.4 K in a layered transition metal disulphide MoS 2 journal, July 2012

Physics of Semiconductor Devices book, January 2007

Single-layer MoS2 transistors journal, January 2011

Highly Stable, Dual-Gated MoS 2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage journal, June 2015

Title: One-dimensional edge contact to encapsulated MoS₂ with a superconductor

Immunity to Contact Scaling in MoS ₂ Transistors Using in Situ Edge Contacts
journal, July 2019

Evidence for two-dimensional Ising superconductivity in gated MoS2
journal, November 2015

One-Dimensional Edge Contacts to a Monolayer Semiconductor
journal, September 2019

Gate-induced superconductivity in atomically thin MoS2 crystals
journal, January 2016

Anomalous Lattice Vibrations of Single- and Few-Layer MoS ₂
journal, March 2010

Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS ₂ Field-Effect-Transistors
journal, July 2015

Low-Temperature Ohmic Contact to Monolayer MoS ₂ by van der Waals Bonded Co/ h -BN Electrodes
journal, July 2017

Ballistic Josephson junctions in edge-contacted graphene
journal, July 2015

2D transition metal dichalcogenides
journal, June 2017

Superconducting Dome in a Gate-Tuned Band Insulator
journal, November 2012

Electrical contacts to two-dimensional semiconductors
journal, November 2015

Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere
journal, July 2015

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS ₂
journal, August 2013

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
journal, April 2015

Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
journal, December 2013

Two-dimensional atomic crystals
journal, July 2005

Room-Temperature Spin Hall Effect in Graphene/MoS ₂ van der Waals Heterostructures
journal, January 2019

Intrinsic electrical transport and performance projections of synthetic monolayer MoS 2 devices
journal, November 2016

Thickness dependent interlayer transport in vertical MoS ₂ Josephson junctions
journal, July 2016

Spin–orbit-driven band inversion in bilayer graphene by the van der Waals proximity effect
journal, June 2019

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
journal, January 2012

Electric-field-induced superconductivity at 9.4 K in a layered transition metal disulphide MoS ₂
journal, July 2012

Physics of Semiconductor Devices
book, January 2007

Single-layer MoS₂ transistors
journal, January 2011

Highly Stable, Dual-Gated MoS ₂ Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
journal, June 2015