Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe2 Nanosheet-Based Channels: Implications for Field-Effect Transistors
Abstract
We report the fabrication of ohmic van der Waals (vdW) contacts to nearly intrinsic WSe2 nanosheet-based channels in field-effect transistors (FETs) using degenerately p-doped MoS2 (p+-MoS2) as a contact metal. We demonstrate that accumulation-type ohmic contacts and the high device performance are achievable without electrostatically gating the drain/source contact regions despite the nearly intrinsic nature of WSe2. Back-gated WSe2 FETs with p+-MoS2 bottom contacts (which screen the back-gate electric field in the drain/source regions) exhibit linear output characteristics, a high on/off ratio of 108, and a high two-terminal field-effect mobility up to ~200 cm2 V–1 s–1 at room temperature. Our theoretical modeling reveals that the p+-MoS2/WSe2 vdW junction behaves like a metal/semiconductor ohmic contact signified by a vanishingly thin space-charge region of ~1 nm on the p+-MoS2 side and a substantial accumulation layer of free holes on the WSe2 side, which is further verified by additional temperature-dependent and dual-gated measurements of WSe2 FETs. We attribute the formation of accumulation-type ohmic contacts free of a Schottky barrier to the near absence of Fermi-level pinning at the vdW interface and the work function of p+-MoS2 being larger than the ionization energy of WSe2. This study represents an important step toward achieving low-resistancemore »
- Authors:
-
[3];
[3];
[1]
- Wayne State Univ., Detroit, MI (United States)
- Univ. of Tennessee, Knoxville, TN (United States)
- Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Univ. of Illinois, Chicago, IL (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1807195
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Nano Materials
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 5; Journal ID: ISSN 2574-0970
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; electronic properties; interfaces; metals; semiconductors; doping; degenerately doped; MoS2; WSe2; two-dimensional; field-effect transistor; Schottky barrier; Fermi-level pinning; ohmic contact
Citation Formats
Andrews, Kraig, Rijal, Upendra, Bowman, Arthur, Chuang, Hsun-Jen, Koehler, Michael R., Yan, Jiaqiang, Mandrus, David G., Chen, Pai-Yen, and Zhou, Zhixian. Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe2 Nanosheet-Based Channels: Implications for Field-Effect Transistors. United States: N. p., 2021.
Web. doi:10.1021/acsanm.1c01138.
Andrews, Kraig, Rijal, Upendra, Bowman, Arthur, Chuang, Hsun-Jen, Koehler, Michael R., Yan, Jiaqiang, Mandrus, David G., Chen, Pai-Yen, & Zhou, Zhixian. Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe2 Nanosheet-Based Channels: Implications for Field-Effect Transistors. United States. https://doi.org/10.1021/acsanm.1c01138
Andrews, Kraig, Rijal, Upendra, Bowman, Arthur, Chuang, Hsun-Jen, Koehler, Michael R., Yan, Jiaqiang, Mandrus, David G., Chen, Pai-Yen, and Zhou, Zhixian. Mon .
"Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe2 Nanosheet-Based Channels: Implications for Field-Effect Transistors". United States. https://doi.org/10.1021/acsanm.1c01138. https://www.osti.gov/servlets/purl/1807195.
@article{osti_1807195,
title = {Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe2 Nanosheet-Based Channels: Implications for Field-Effect Transistors},
author = {Andrews, Kraig and Rijal, Upendra and Bowman, Arthur and Chuang, Hsun-Jen and Koehler, Michael R. and Yan, Jiaqiang and Mandrus, David G. and Chen, Pai-Yen and Zhou, Zhixian},
abstractNote = {We report the fabrication of ohmic van der Waals (vdW) contacts to nearly intrinsic WSe2 nanosheet-based channels in field-effect transistors (FETs) using degenerately p-doped MoS2 (p+-MoS2) as a contact metal. We demonstrate that accumulation-type ohmic contacts and the high device performance are achievable without electrostatically gating the drain/source contact regions despite the nearly intrinsic nature of WSe2. Back-gated WSe2 FETs with p+-MoS2 bottom contacts (which screen the back-gate electric field in the drain/source regions) exhibit linear output characteristics, a high on/off ratio of 108, and a high two-terminal field-effect mobility up to ~200 cm2 V–1 s–1 at room temperature. Our theoretical modeling reveals that the p+-MoS2/WSe2 vdW junction behaves like a metal/semiconductor ohmic contact signified by a vanishingly thin space-charge region of ~1 nm on the p+-MoS2 side and a substantial accumulation layer of free holes on the WSe2 side, which is further verified by additional temperature-dependent and dual-gated measurements of WSe2 FETs. We attribute the formation of accumulation-type ohmic contacts free of a Schottky barrier to the near absence of Fermi-level pinning at the vdW interface and the work function of p+-MoS2 being larger than the ionization energy of WSe2. This study represents an important step toward achieving low-resistance ohmic contacts to two-dimensional (2D) semiconductors by eliminating the Fermi-level pinning effects, which is expected to have significant implications for next-generation 2D semiconductor-based nanoelectronics.},
doi = {10.1021/acsanm.1c01138},
journal = {ACS Applied Nano Materials},
number = 5,
volume = 4,
place = {United States},
year = {Mon May 17 00:00:00 EDT 2021},
month = {Mon May 17 00:00:00 EDT 2021}
}
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