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Title: Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe 2, MoS 2, and MoSe 2 transistors

Here, we report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe 2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of ~0.3 kΩ μm, high on/off ratios up to >10 9, and high drive currents exceeding 320 μA μm –1. These favorable characteristics are combined with a two-terminal field-effect hole mobility μ FE ≈ 2 × 10 2 cm 2 V –1 s –1 at room temperature, which increases to >2 × 10 3 cm 2 V –1 s –1 at cryogenic temperatures. We observe a similar performance also in MoS 2 and MoSe 2 FETs with 2D/2D drain and source contacts. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and a wide variety of other 2D materials as the channel materials in postsilicon electronics.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [3] ;  [3] ;  [4] ;  [1]
  1. Wayne State Univ., Detroit, MI (United States)
  2. The Univ. of Tennessee, Knoxville, TN (United States)
  3. The Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. Michigan State Univ., East Lansing, MI (United States)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 16; Journal Issue: 3; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; MoS2; WSe2; MoSe2; field-effect transistor; two-dimensional; ohmic contact
OSTI Identifier:
1334435

Chuang, Hsun -Jen, Chamlagain, Bhim, Koehler, Michael, Perera, Meeghage Madusanka, Yan, Jiaqiang, Mandrus, David, Tomanek, David, and Zhou, Zhixian. Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe2, MoS2, and MoSe2 transistors. United States: N. p., Web. doi:10.1021/acs.nanolett.5b05066.
Chuang, Hsun -Jen, Chamlagain, Bhim, Koehler, Michael, Perera, Meeghage Madusanka, Yan, Jiaqiang, Mandrus, David, Tomanek, David, & Zhou, Zhixian. Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe2, MoS2, and MoSe2 transistors. United States. doi:10.1021/acs.nanolett.5b05066.
Chuang, Hsun -Jen, Chamlagain, Bhim, Koehler, Michael, Perera, Meeghage Madusanka, Yan, Jiaqiang, Mandrus, David, Tomanek, David, and Zhou, Zhixian. 2016. "Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe2, MoS2, and MoSe2 transistors". United States. doi:10.1021/acs.nanolett.5b05066. https://www.osti.gov/servlets/purl/1334435.
@article{osti_1334435,
title = {Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe2, MoS2, and MoSe2 transistors},
author = {Chuang, Hsun -Jen and Chamlagain, Bhim and Koehler, Michael and Perera, Meeghage Madusanka and Yan, Jiaqiang and Mandrus, David and Tomanek, David and Zhou, Zhixian},
abstractNote = {Here, we report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of ~0.3 kΩ μm, high on/off ratios up to >109, and high drive currents exceeding 320 μA μm–1. These favorable characteristics are combined with a two-terminal field-effect hole mobility μFE ≈ 2 × 102 cm2 V–1 s–1 at room temperature, which increases to >2 × 103 cm2 V–1 s–1 at cryogenic temperatures. We observe a similar performance also in MoS2 and MoSe2 FETs with 2D/2D drain and source contacts. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and a wide variety of other 2D materials as the channel materials in postsilicon electronics.},
doi = {10.1021/acs.nanolett.5b05066},
journal = {Nano Letters},
number = 3,
volume = 16,
place = {United States},
year = {2016},
month = {2}
}