skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Fabrication and independent control of patterned polymer gate for a few-layer WSe{sub 2} field-effect transistor

Abstract

We report the fabrication of a patterned polymer electrolyte for a two-dimensional (2D) semiconductor, few-layer tungsten diselenide (WSe{sub 2}) field-effect transistor (FET). We expose an electron-beam in a desirable region to form the patterned structure. The WSe{sub 2} FET acts as a p-type semiconductor in both bare and polymer-covered devices. We observe a highly efficient gating effect in the polymer-patterned device with independent gate control. The patterned polymer gate operates successfully in a molybdenum disulfide (MoS{sub 2}) FET, indicating the potential for general applications to 2D semiconductors. The results of this study can contribute to large-scale integration and better flexibility in transition metal dichalcogenide (TMD)-based electronics.

Authors:
; ; ;  [1]; ;  [2]
  1. Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
  2. Department of Chemistry Education, Seoul National University, Seoul 151-742 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22611379
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTROLYTES; ELECTRON BEAMS; ELECTRONS; FIELD EFFECT TRANSISTORS; FLEXIBILITY; LAYERS; MOLYBDENUM; MOLYBDENUM SULFIDES; POLYMERS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; TUNGSTEN COMPOUNDS; TUNGSTEN SELENIDES; TWO-DIMENSIONAL CALCULATIONS; TWO-DIMENSIONAL SYSTEMS

Citation Formats

Hong, Sung Ju, Park, Min, Kang, Hojin, Park, Yung Woo, E-mail: ywpark@snu.ac.kr, Lee, Minwoo, and Jeong, Dae Hong. Fabrication and independent control of patterned polymer gate for a few-layer WSe{sub 2} field-effect transistor. United States: N. p., 2016. Web. doi:10.1063/1.4961990.
Hong, Sung Ju, Park, Min, Kang, Hojin, Park, Yung Woo, E-mail: ywpark@snu.ac.kr, Lee, Minwoo, & Jeong, Dae Hong. Fabrication and independent control of patterned polymer gate for a few-layer WSe{sub 2} field-effect transistor. United States. doi:10.1063/1.4961990.
Hong, Sung Ju, Park, Min, Kang, Hojin, Park, Yung Woo, E-mail: ywpark@snu.ac.kr, Lee, Minwoo, and Jeong, Dae Hong. Mon . "Fabrication and independent control of patterned polymer gate for a few-layer WSe{sub 2} field-effect transistor". United States. doi:10.1063/1.4961990.
@article{osti_22611379,
title = {Fabrication and independent control of patterned polymer gate for a few-layer WSe{sub 2} field-effect transistor},
author = {Hong, Sung Ju and Park, Min and Kang, Hojin and Park, Yung Woo, E-mail: ywpark@snu.ac.kr and Lee, Minwoo and Jeong, Dae Hong},
abstractNote = {We report the fabrication of a patterned polymer electrolyte for a two-dimensional (2D) semiconductor, few-layer tungsten diselenide (WSe{sub 2}) field-effect transistor (FET). We expose an electron-beam in a desirable region to form the patterned structure. The WSe{sub 2} FET acts as a p-type semiconductor in both bare and polymer-covered devices. We observe a highly efficient gating effect in the polymer-patterned device with independent gate control. The patterned polymer gate operates successfully in a molybdenum disulfide (MoS{sub 2}) FET, indicating the potential for general applications to 2D semiconductors. The results of this study can contribute to large-scale integration and better flexibility in transition metal dichalcogenide (TMD)-based electronics.},
doi = {10.1063/1.4961990},
journal = {AIP Advances},
number = 8,
volume = 6,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2016},
month = {Mon Aug 15 00:00:00 EDT 2016}
}