Spacer-Layer-Tunable Magnetism and High-Field Topological Hall Effect in Topological Insulator Heterostructures
Abstract
Controlling magnetic order in magnetic topological insulators (MTIs) is a key to developing spintronic applications with MTIs and is commonly achieved by changing the magnetic doping concentration, which inevitably affects the spin–orbit coupling strength and the topological properties. Here, we demonstrate tunable magnetic properties in topological heterostructures over a wide range, from a ferromagnetic phase with a Curie temperature of around 100 K all the way to a paramagnetic phase, while keeping the overall chemical composition the same, by controlling the thickness of nonmagnetic spacer layers between two atomically thin magnetic layers. This work showcases that spacer-layer control is a powerful tool to manipulate magneto-topological functionalities in MTI heterostructures. Furthermore, the interaction between the MTI and the Cr2O3 buffer layers also leads to a robust topological Hall effect surviving up to a record-high 6 T of magnetic field, shedding light on the critical role of interfacial layers in thin-film topological materials.
- Authors:
-
[1];
[3];
[1]
- Center for Quantum Materials Synthesis and Department of Physics & Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, United States
- Department of Physics & Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, United States
- Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, United States
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); Gordon and Betty Moore Foundation’s EPiQS Initiative; MURI; Army Research Office (ARO)
- OSTI Identifier:
- 1858735
- Alternate Identifier(s):
- OSTI ID: 1821207
- Report Number(s):
- BNL-222119-2021-JAAM
Journal ID: ISSN 1530-6984
- Grant/Contract Number:
- DESC0012704; SC0012704; GBMF6402; W911NF2020166; W911NF-20-1-0108
- Resource Type:
- Published Article
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Name: Nano Letters Journal Volume: 21 Journal Issue: 14; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; magnetic topological insulator; spacer layer; van Vleck mechanism; anomalous Hall effect; topological Hall effect; Dzyaloshinskii-Moriya interaction
Citation Formats
Yao, Xiong, Yi, Hee Taek, Jain, Deepti, Han, Myung-Geun, and Oh, Seongshik. Spacer-Layer-Tunable Magnetism and High-Field Topological Hall Effect in Topological Insulator Heterostructures. United States: N. p., 2021.
Web. doi:10.1021/acs.nanolett.1c00668.
Yao, Xiong, Yi, Hee Taek, Jain, Deepti, Han, Myung-Geun, & Oh, Seongshik. Spacer-Layer-Tunable Magnetism and High-Field Topological Hall Effect in Topological Insulator Heterostructures. United States. https://doi.org/10.1021/acs.nanolett.1c00668
Yao, Xiong, Yi, Hee Taek, Jain, Deepti, Han, Myung-Geun, and Oh, Seongshik. Thu .
"Spacer-Layer-Tunable Magnetism and High-Field Topological Hall Effect in Topological Insulator Heterostructures". United States. https://doi.org/10.1021/acs.nanolett.1c00668.
@article{osti_1858735,
title = {Spacer-Layer-Tunable Magnetism and High-Field Topological Hall Effect in Topological Insulator Heterostructures},
author = {Yao, Xiong and Yi, Hee Taek and Jain, Deepti and Han, Myung-Geun and Oh, Seongshik},
abstractNote = {Controlling magnetic order in magnetic topological insulators (MTIs) is a key to developing spintronic applications with MTIs and is commonly achieved by changing the magnetic doping concentration, which inevitably affects the spin–orbit coupling strength and the topological properties. Here, we demonstrate tunable magnetic properties in topological heterostructures over a wide range, from a ferromagnetic phase with a Curie temperature of around 100 K all the way to a paramagnetic phase, while keeping the overall chemical composition the same, by controlling the thickness of nonmagnetic spacer layers between two atomically thin magnetic layers. This work showcases that spacer-layer control is a powerful tool to manipulate magneto-topological functionalities in MTI heterostructures. Furthermore, the interaction between the MTI and the Cr2O3 buffer layers also leads to a robust topological Hall effect surviving up to a record-high 6 T of magnetic field, shedding light on the critical role of interfacial layers in thin-film topological materials.},
doi = {10.1021/acs.nanolett.1c00668},
journal = {Nano Letters},
number = 14,
volume = 21,
place = {United States},
year = {Thu Jul 15 00:00:00 EDT 2021},
month = {Thu Jul 15 00:00:00 EDT 2021}
}
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