Spin–orbit coupling proximity effect in MoS2/Fe3GeTe2 heterostructures

Tu, Zhiyin; Zhou, Tong; Ersevim, Thomas; Arachchige, Hasitha Suriya; Hanbicki, Aubrey T.; Friedman, Adam L.; Mandrus, David; Ouyang, Min; Žutić, Igor; Gong, Cheng

doi:10.1063/5.0080505

Title: Spin–orbit coupling proximity effect in MoS₂/Fe₃GeTe₂ heterostructures

Journal Article · 23 January 2022 · Applied Physics Letters

DOI: https://doi.org/10.1063/5.0080505 · OSTI ID:1979031

^[1]; Zhou, Tong ^[2]; Ersevim, Thomas ^[3]; Arachchige, Hasitha Suriya ^[4];

^[3]; Friedman, Adam L. ^[3]; Mandrus, David ^[4]; Ouyang, Min ^[3];

^[2];

^[3]

University of Maryland, College Park, MD (United States); Univ. of Maryland, College Park, MD (United States)
State University of New York at Buffalo, NY (United States)
University of Maryland, College Park, MD (United States)
University of Tennessee, Knoxville, TN (United States)

Layered two-dimensional (2D) magnet/semiconductor heterostructures combine spintronic and optoelectronic properties of constituent materials, leading to new magneto-optical and magnetoelectric phenomena such as spontaneous emission of helical light and enhanced Zeeman splitting in single photon emission. While prior focus was mostly on the magnetic proximity effect, where properties of 2D magnets are transferred to nonmagnetic 2D materials, the inverse effect of 2D semiconductors altering 2D magnets is much less understood. Here, we fabricated and studied van der Waals (vdW) heterostructures of 2D magnet Fe₃GeTe₂ (FGT) and 2D semiconductor MoS₂. With reflectance magnetic circular dichroism, we found that the coercive field of MoS₂-covered FGT reduces compared with uncovered FGT, agreeing well with our first-principles calculations. With its strong spin–orbit coupling (SOC), MoS₂ effectively alters the crystal field of the adjacent FGT and its magnetic anisotropy. Furthermore, an unconventional two-step hysteresis loop emerges in MoS₂/FGT as a result of the superposition of two regions of FGT: at the interface and away from the interface. Our experimental elucidation of the SOC proximity effect that MoS₂ exerts on FGT provides fundamental understanding for the rational development of 2D magnet/semiconductor heterostructures.

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Research Organization:: State University of New York (SUNY), Albany, NY (United States); University of Maryland, College Park, MD (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Northrop Grumman Mission Systems’ University Research Program; Naval Air Warfare Center Aircraft Division; Army Research laboratory; University at Buffalo

Grant/Contract Number:: SC0004890

OSTI ID:: 1979031

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 120; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Spin–orbit coupling proximity effect in MoS2/Fe3GeTe2 heterostructures

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Title: Spin–orbit coupling proximity effect in MoS₂/Fe₃GeTe₂ heterostructures