Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS-Compatible Sputtering Technique
Abstract
Breaking time-reversal symmetry by introducing magnetic order, thereby opening a gap in the topological surface state bands, is essential for realizing useful topological properties such as the quantum anomalous Hall and axion insulator states. In this work, a novel topological antiferromagnetic (AFM) phase is created at the interface of a sputtered, c-axis-oriented, topological insulator/ferromagnet heterostructure—Bi2Te3/Ni80Fe20 because of diffusion of Ni in Bi2Te3 (Ni-Bi2Te3). The AFM property of the Ni-Bi2Te3 interfacial layer is established by observation of spontaneous exchange bias in the magnetic hysteresis loop and compensated moments in the depth profile of the magnetization using polarized neutron reflectometry. Analysis of the structural and chemical properties of the Ni-Bi2Te3 layer is carried out using selected-area electron diffraction, electron energy loss spectroscopy, and X-ray photoelectron spectroscopy. These studies, in parallel with first-principles calculations, indicate a solid-state chemical reaction that leads to the formation of Ni=Te bonds and the presence of topological antiferromagnetic (AFM) compound NiBi2Te4 in the Ni-Bi2Te3 interface layer. The Neél temperature of the Ni-Bi2Te3 layer is ≈ 63 K, which is higher than that of typical magnetic topological insulators (MTIs). The presented results provide a pathway toward industrial complementary metal-oxide-semiconductor (CMOS)-process-compatible sputtered-MTI heterostructures, leading to novel materials for topological quantummore »
- Authors:
-
[1];
[2];
[3];
[4];
[5];
[1];
[2];
[1];
[1];
[1];
[1]
- Northeastern University, Boston, MA (United States)
- Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Tata Institute of Fundamental Research, Mumbai (India)
- National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); US Army; National Institutes of Health (NIH); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); Air Force Research Laboratory (AFRL)
- OSTI Identifier:
- 1883675
- Grant/Contract Number:
- AC05-00OR22725; W911NF20P0009; UF1NS107694; 1160504; DMR-1905662; FA9550-20-1-0247; SC0019275; FG02-07ER46352; AC02-05CH11231; FA8650-19-F-5403 TO3; FA8650-18-2-5295
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Volume: 34; Journal Issue: 15; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; topological Insulator; ferromagnet; magnetic topological insulator; interface; van der Waals materials
Citation Formats
Bhattacharjee, Nirjhar, Mahalingam, Krishnamurthy, Fedorko, Adrian, Lauter, Valeria, Matzelle, Matthew, Singh, Bahadur, Grutter, Alexander, Will‐Cole, Alexandria, Page, Michael, McConney, Michael, Markiewicz, Robert, Bansil, Arun, Heiman, Don, and Sun, Nian Xiang. Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS-Compatible Sputtering Technique. United States: N. p., 2022.
Web. doi:10.1002/adma.202108790.
Bhattacharjee, Nirjhar, Mahalingam, Krishnamurthy, Fedorko, Adrian, Lauter, Valeria, Matzelle, Matthew, Singh, Bahadur, Grutter, Alexander, Will‐Cole, Alexandria, Page, Michael, McConney, Michael, Markiewicz, Robert, Bansil, Arun, Heiman, Don, & Sun, Nian Xiang. Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS-Compatible Sputtering Technique. United States. https://doi.org/10.1002/adma.202108790
Bhattacharjee, Nirjhar, Mahalingam, Krishnamurthy, Fedorko, Adrian, Lauter, Valeria, Matzelle, Matthew, Singh, Bahadur, Grutter, Alexander, Will‐Cole, Alexandria, Page, Michael, McConney, Michael, Markiewicz, Robert, Bansil, Arun, Heiman, Don, and Sun, Nian Xiang. Tue .
"Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS-Compatible Sputtering Technique". United States. https://doi.org/10.1002/adma.202108790. https://www.osti.gov/servlets/purl/1883675.
@article{osti_1883675,
title = {Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS-Compatible Sputtering Technique},
author = {Bhattacharjee, Nirjhar and Mahalingam, Krishnamurthy and Fedorko, Adrian and Lauter, Valeria and Matzelle, Matthew and Singh, Bahadur and Grutter, Alexander and Will‐Cole, Alexandria and Page, Michael and McConney, Michael and Markiewicz, Robert and Bansil, Arun and Heiman, Don and Sun, Nian Xiang},
abstractNote = {Breaking time-reversal symmetry by introducing magnetic order, thereby opening a gap in the topological surface state bands, is essential for realizing useful topological properties such as the quantum anomalous Hall and axion insulator states. In this work, a novel topological antiferromagnetic (AFM) phase is created at the interface of a sputtered, c-axis-oriented, topological insulator/ferromagnet heterostructure—Bi2Te3/Ni80Fe20 because of diffusion of Ni in Bi2Te3 (Ni-Bi2Te3). The AFM property of the Ni-Bi2Te3 interfacial layer is established by observation of spontaneous exchange bias in the magnetic hysteresis loop and compensated moments in the depth profile of the magnetization using polarized neutron reflectometry. Analysis of the structural and chemical properties of the Ni-Bi2Te3 layer is carried out using selected-area electron diffraction, electron energy loss spectroscopy, and X-ray photoelectron spectroscopy. These studies, in parallel with first-principles calculations, indicate a solid-state chemical reaction that leads to the formation of Ni=Te bonds and the presence of topological antiferromagnetic (AFM) compound NiBi2Te4 in the Ni-Bi2Te3 interface layer. The Neél temperature of the Ni-Bi2Te3 layer is ≈ 63 K, which is higher than that of typical magnetic topological insulators (MTIs). The presented results provide a pathway toward industrial complementary metal-oxide-semiconductor (CMOS)-process-compatible sputtered-MTI heterostructures, leading to novel materials for topological quantum devices.},
doi = {10.1002/adma.202108790},
journal = {Advanced Materials},
number = 15,
volume = 34,
place = {United States},
year = {Tue Feb 08 00:00:00 EST 2022},
month = {Tue Feb 08 00:00:00 EST 2022}
}
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