Electronic switching by metastable polarization states in BiFe O3 thin films
Abstract
Here, we present an approach to control resistive switching in metal-ferroelectric contacts using a radially symmetric electric field. In ferroelectrics with significant polarization along the corresponding field lines, the field above a critical threshold will induce polarization discontinuity, a corresponding nanoscale volume of space charge, and a conducting junction. We demonstrate this principle using nanoscale polarization switching of a conventional (001)-oriented thin film of BiFeO3. Without any optimization, the conducting state created in this regime of resistive switching exhibits local currents of ~1–10nA, approaching the ~100nA threshold required for device implementation [J. Jiang et al., Nat. Mater. 17, 49 (2018)]. The corresponding electronic function is that of a volatile resistive switch, which is directly compatible with neuristor functionality that encodes the functioning basis of an axon [M. D. Pickett et al., Nat. Mater. 12, 114 (2013)]. Phase-field modeling further reveals that in the strongly charged local configuration, BiFeO3 locally undergoes a rhombohedral-tetragonal (R-T) phase transition, in part due to substantial piezoelectric expansion of the lattice. The estimated local charge density can be as high as ~1021cm-3, which would be extremely difficult to achieve by conventional doping approaches without altering other material properties. Therefore, this method for creating stable and reproduciblemore »
- Authors:
-
[2];
[2];
[2];
[2]
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Texas, Arlington, TX (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Univ. of Twente, Enschede (Netherlands)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1817613
- Alternate Identifier(s):
- OSTI ID: 1468843
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Materials
- Additional Journal Information:
- Journal Volume: 2; Journal Issue: 9; Journal ID: ISSN 2475-9953
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; domain walls; electrical conductivity; ferroelectric domains; structural order parameter; structural phase transition
Citation Formats
Cao, Ye, Li, Qian, Huijben, Mark, Vasudevan, Rama K., Kalinin, Sergei V., and Maksymovych, Petro. Electronic switching by metastable polarization states in BiFe O3 thin films. United States: N. p., 2018.
Web. doi:10.1103/physrevmaterials.2.094401.
Cao, Ye, Li, Qian, Huijben, Mark, Vasudevan, Rama K., Kalinin, Sergei V., & Maksymovych, Petro. Electronic switching by metastable polarization states in BiFe O3 thin films. United States. https://doi.org/10.1103/physrevmaterials.2.094401
Cao, Ye, Li, Qian, Huijben, Mark, Vasudevan, Rama K., Kalinin, Sergei V., and Maksymovych, Petro. Tue .
"Electronic switching by metastable polarization states in BiFe O3 thin films". United States. https://doi.org/10.1103/physrevmaterials.2.094401. https://www.osti.gov/servlets/purl/1817613.
@article{osti_1817613,
title = {Electronic switching by metastable polarization states in BiFe O3 thin films},
author = {Cao, Ye and Li, Qian and Huijben, Mark and Vasudevan, Rama K. and Kalinin, Sergei V. and Maksymovych, Petro},
abstractNote = {Here, we present an approach to control resistive switching in metal-ferroelectric contacts using a radially symmetric electric field. In ferroelectrics with significant polarization along the corresponding field lines, the field above a critical threshold will induce polarization discontinuity, a corresponding nanoscale volume of space charge, and a conducting junction. We demonstrate this principle using nanoscale polarization switching of a conventional (001)-oriented thin film of BiFeO3. Without any optimization, the conducting state created in this regime of resistive switching exhibits local currents of ~1–10nA, approaching the ~100nA threshold required for device implementation [J. Jiang et al., Nat. Mater. 17, 49 (2018)]. The corresponding electronic function is that of a volatile resistive switch, which is directly compatible with neuristor functionality that encodes the functioning basis of an axon [M. D. Pickett et al., Nat. Mater. 12, 114 (2013)]. Phase-field modeling further reveals that in the strongly charged local configuration, BiFeO3 locally undergoes a rhombohedral-tetragonal (R-T) phase transition, in part due to substantial piezoelectric expansion of the lattice. The estimated local charge density can be as high as ~1021cm-3, which would be extremely difficult to achieve by conventional doping approaches without altering other material properties. Therefore, this method for creating stable and reproducible strongly charged ferroelectric junctions enables more systematic studies of their physical properties, such as the possibility of structural and electronic phase transitions, and it can lead to new ferroelectric devices for advanced information functions.},
doi = {10.1103/physrevmaterials.2.094401},
journal = {Physical Review Materials},
number = 9,
volume = 2,
place = {United States},
year = {Tue Sep 04 00:00:00 EDT 2018},
month = {Tue Sep 04 00:00:00 EDT 2018}
}
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Works referenced in this record:
Experimental demonstration of hybrid improper ferroelectricity and the presence of abundant charged walls in (Ca,Sr)3Ti2O7 crystals
journal, January 2015
- Oh, Yoon Seok; Luo, Xuan; Huang, Fei-Ting
- Nature Materials, Vol. 14, Issue 4
Giant elastic tunability in strained BiFeO3 near an electrically induced phase transition
journal, November 2015
- Li, Q.; Cao, Y.; Yu, P.
- Nature Communications, Vol. 6, Issue 1
Free-Carrier-Compensated Charged Domain Walls Produced with Super-Bandgap Illumination in Insulating Ferroelectrics
journal, September 2016
- Bednyakov, Petr; Sluka, Tomas; Tagantsev, Alexander
- Advanced Materials, Vol. 28, Issue 43
A scalable neuristor built with Mott memristors
journal, December 2012
- Pickett, Matthew D.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley
- Nature Materials, Vol. 12, Issue 2
Applications of Modern Ferroelectrics
journal, February 2007
- Scott, J. F.
- Science, Vol. 315, Issue 5814
APPLIED PHYSICS: Tunneling Across a Ferroelectric
journal, July 2006
- Tsymbal, E. Y.
- Science, Vol. 313, Issue 5784
Quantum properties of charged ferroelectric domain walls
journal, December 2015
- Sturman, B.; Podivilov, E.; Stepanov, M.
- Physical Review B, Vol. 92, Issue 21
Ferroelectric Tunnel Memristor
journal, October 2012
- Kim, D. J.; Lu, H.; Ryu, S.
- Nano Letters, Vol. 12, Issue 11
Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors
journal, June 2004
- Mitrofanov, Oleg; Manfra, Michael
- Journal of Applied Physics, Vol. 95, Issue 11
Electrostatic doping by domain walls
journal, June 2015
- Maksymovych, Petro
- Nature Nanotechnology, Vol. 10, Issue 7
Scaling and disorder analysis of local I – V curves from ferroelectric thin films of lead zirconate titanate
journal, May 2011
- Maksymovych, Peter; Pan, Minghu; Yu, Pu
- Nanotechnology, Vol. 22, Issue 25
Field enhancement of electronic conductance at ferroelectric domain walls
journal, November 2017
- Vasudevan, Rama K.; Cao, Ye; Laanait, Nouamane
- Nature Communications, Vol. 8, Issue 1
Encountering domains in ferroelectrics
journal, January 1973
- Vul, B. M.; Guro, G. M.; Ivanchik, I. I.
- Ferroelectrics, Vol. 6, Issue 1
Conduction at domain walls in oxide multiferroics
journal, January 2009
- Seidel, J.; Martin, L. W.; He, Q.
- Nature Materials, Vol. 8, Issue 3
Conduction through 71° Domain Walls in Thin Films
journal, September 2011
- Farokhipoor, S.; Noheda, B.
- Physical Review Letters, Vol. 107, Issue 12
Ferroelectric Schottky Diode
journal, October 1994
- Blom, P. W. M.; Wolf, R. M.; Cillessen, J. F. M.
- Physical Review Letters, Vol. 73, Issue 15
Emerging memories: resistive switching mechanisms and current status
journal, June 2012
- Jeong, Doo Seok; Thomas, Reji; Katiyar, R. S.
- Reports on Progress in Physics, Vol. 75, Issue 7
Nanosecond Phase Transition Dynamics in Compressively Strained Epitaxial BiFeO 3
journal, October 2015
- Cosgriff, Margaret P.; Chen, Pice; Lee, Sung Su
- Advanced Electronic Materials, Vol. 2, Issue 1
Anisotropic conductance at improper ferroelectric domain walls
journal, February 2012
- Meier, D.; Seidel, J.; Cano, A.
- Nature Materials, Vol. 11, Issue 4
Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films
journal, April 2009
- Yang, C. -H.; Seidel, J.; Kim, S. Y.
- Nature Materials, Vol. 8, Issue 6
Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories
journal, November 2017
- Jiang, Jun; Bai, Zi Long; Chen, Zhi Hui
- Nature Materials, Vol. 17, Issue 1
Ultrathin limit and dead-layer effects in local polarization switching of BiFeO
journal, January 2012
- Maksymovych, Peter; Huijben, Mark; Pan, Minghu
- Physical Review B, Vol. 85, Issue 1
Conduction at Domain Walls in Insulating Pb(Zr0.2Ti0.8)O3 Thin Films
journal, September 2011
- Guyonnet, Jill; Gaponenko, Iaroslav; Gariglio, Stefano
- Advanced Materials, Vol. 23, Issue 45
Free-electron gas at charged domain walls in insulating BaTiO3
journal, May 2013
- Sluka, Tomas; Tagantsev, Alexander K.; Bednyakov, Petr
- Nature Communications, Vol. 4, Issue 1
Solid-state memories based on ferroelectric tunnel junctions
journal, December 2011
- Chanthbouala, André; Crassous, Arnaud; Garcia, Vincent
- Nature Nanotechnology, Vol. 7, Issue 2
Domain wall conduction in multiaxial ferroelectrics
journal, January 2012
- Eliseev, Eugene A.; Morozovska, Anna N.; Svechnikov, George S.
- Physical Review B, Vol. 85, Issue 4
Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO 3
journal, February 2009
- Choi, T.; Lee, S.; Choi, Y. J.
- Science, Vol. 324, Issue 5923
Polarization Control of Electron Tunneling into Ferroelectric Surfaces
journal, June 2009
- Maksymovych, P.; Jesse, S.; Yu, P.
- Science, Vol. 324, Issue 5933
Deterministic control of ferroelastic switching in multiferroic materials
journal, October 2009
- Balke, N.; Choudhury, S.; Jesse, S.
- Nature Nanotechnology, Vol. 4, Issue 12, p. 868-875
Ferroelectric tunnel junctions for information storage and processing
journal, July 2014
- Garcia, Vincent; Bibes, Manuel
- Nature Communications, Vol. 5, Issue 1
Enhanced electric conductivity at ferroelectric vortex cores in BiFeO3
journal, November 2011
- Balke, Nina; Winchester, Benjamin; Ren, Wei
- Nature Physics, Vol. 8, Issue 1
Memristive devices for computing
journal, January 2013
- Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R.
- Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24
Ferroelectric size effects in multiferroic BiFeO3 thin films
journal, June 2007
- Chu, Y. H.; Zhao, T.; Cruz, M. P.
- Applied Physics Letters, Vol. 90, Issue 25
Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
journal, October 2001
- Jiménez-Molinos, F.; Palma, A.; Gámiz, F.
- Journal of Applied Physics, Vol. 90, Issue 7
Tunable Metallic Conductance in Ferroelectric Nanodomains
journal, December 2011
- Maksymovych, Peter; Morozovska, Anna N.; Yu, Pu
- Nano Letters, Vol. 12, Issue 1
Nanoscale polarization switching mechanisms in multiferroic BiFeO 3 thin films
journal, March 2011
- Béa, H.; Ziegler, B.; Bibes, M.
- Journal of Physics: Condensed Matter, Vol. 23, Issue 14
Formation of charged ferroelectric domain walls with controlled periodicity
journal, October 2015
- Bednyakov, Petr S.; Sluka, Tomas; Tagantsev, Alexander K.
- Scientific Reports, Vol. 5, Issue 1
Works referencing / citing this record:
Progress in BiFeO 3 -based heterostructures: materials, properties and applications
journal, January 2020
- Yin, Li; Mi, Wenbo
- Nanoscale, Vol. 12, Issue 2
Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain
journal, June 2019
- Pérez‐Tomás, Amador
- Advanced Materials Interfaces, Vol. 6, Issue 15
Phase-field simulations of surface charge-induced polarization switching
journal, March 2019
- Liu, Di; Zhao, Ru; Jafri, Hasnain Mehdi
- Applied Physics Letters, Vol. 114, Issue 11