Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures
Abstract
Abstract Heterostructures formed from interfaces between materials with complementary properties often display unconventional physics. Of especial interest are heterostructures formed with ferroelectric materials. These are mostly formed by combining thin layers in vertical stacks. Here the first in situ molecular beam epitaxial growth and scanning tunneling microscopy characterization of atomically sharp lateral heterostructures between a ferroelectric SnTe monolayer and a paraelectric PbTe monolayer are reported. The bias voltage dependence of the apparent heights of SnTe and PbTe monolayers, which are closely related to the type‐II band alignment of the heterostructure, is investigated. Remarkably, it is discovered that the ferroelectric domains in the SnTe surrounding a PbTe core form either clockwise or counterclockwise vortex‐oriented quadrant configurations. In addition, when there is a finite angle between the polarization and the interface, the perpendicular component of the polarization always points from SnTe to PbTe. Supported by first‐principles calculation, the mechanism of vortex formation and preferred polarization direction is identified in the interaction between the polarization, the space charge, and the strain effect at the horizontal heterointerface. The studies bring the application of 2D group‐IV monochalcogenides on in‐plane ferroelectric heterostructures a step closer.
- Authors:
-
[1];
[2];
[2];
[3];
[3]
- Max Planck Institute of Microstructure Physics Weinberg 2 06120 Halle Germany, Beijing Academy of Quantum Information Sciences Beijing 100193 China
- Department of Physics University of Arkansas Fayetteville AR 72701 USA
- Max Planck Institute of Microstructure Physics Weinberg 2 06120 Halle Germany
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1805072
- Alternate Identifier(s):
- OSTI ID: 1805074
- Grant/Contract Number:
- DE‐SC0016139
- Resource Type:
- Published Article
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Name: Advanced Materials Journal Volume: 33 Journal Issue: 32; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- Germany
- Language:
- English
Citation Formats
Chang, Kai, Villanova, John W. D., Ji, Jing‐Rong, Das, Souvik, Küster, Felix, Barraza‐Lopez, Salvador, Sessi, Paolo, and Parkin, Stuart S. P. Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures. Germany: N. p., 2021.
Web. doi:10.1002/adma.202102267.
Chang, Kai, Villanova, John W. D., Ji, Jing‐Rong, Das, Souvik, Küster, Felix, Barraza‐Lopez, Salvador, Sessi, Paolo, & Parkin, Stuart S. P. Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures. Germany. https://doi.org/10.1002/adma.202102267
Chang, Kai, Villanova, John W. D., Ji, Jing‐Rong, Das, Souvik, Küster, Felix, Barraza‐Lopez, Salvador, Sessi, Paolo, and Parkin, Stuart S. P. Sat .
"Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures". Germany. https://doi.org/10.1002/adma.202102267.
@article{osti_1805072,
title = {Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures},
author = {Chang, Kai and Villanova, John W. D. and Ji, Jing‐Rong and Das, Souvik and Küster, Felix and Barraza‐Lopez, Salvador and Sessi, Paolo and Parkin, Stuart S. P.},
abstractNote = {Abstract Heterostructures formed from interfaces between materials with complementary properties often display unconventional physics. Of especial interest are heterostructures formed with ferroelectric materials. These are mostly formed by combining thin layers in vertical stacks. Here the first in situ molecular beam epitaxial growth and scanning tunneling microscopy characterization of atomically sharp lateral heterostructures between a ferroelectric SnTe monolayer and a paraelectric PbTe monolayer are reported. The bias voltage dependence of the apparent heights of SnTe and PbTe monolayers, which are closely related to the type‐II band alignment of the heterostructure, is investigated. Remarkably, it is discovered that the ferroelectric domains in the SnTe surrounding a PbTe core form either clockwise or counterclockwise vortex‐oriented quadrant configurations. In addition, when there is a finite angle between the polarization and the interface, the perpendicular component of the polarization always points from SnTe to PbTe. Supported by first‐principles calculation, the mechanism of vortex formation and preferred polarization direction is identified in the interaction between the polarization, the space charge, and the strain effect at the horizontal heterointerface. The studies bring the application of 2D group‐IV monochalcogenides on in‐plane ferroelectric heterostructures a step closer.},
doi = {10.1002/adma.202102267},
journal = {Advanced Materials},
number = 32,
volume = 33,
place = {Germany},
year = {Sat Jul 03 00:00:00 EDT 2021},
month = {Sat Jul 03 00:00:00 EDT 2021}
}
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