Identifying crystal structures and chemical reactions at the interface of stanene on Bi2Te3
Abstract
Synthesizing monolayers and heterostructures is an enabling approach to extract new physical phenomena from bulk materials. Among the structures amenable to this approach is stanene, which is a monolayer of tin, similar to graphene, and has been predicted to host one-dimensional topological states at its edges. Stanene can be tuned by decorating with different adatoms, which makes it a promising platform on which to engineer topological devices. Here, we deposit Sn on Bi2Te3 and characterize the growth using anomalous synchrotron x-ray scattering and x-ray photoelectron spectroscopy (XPS). X-ray diffraction data reveal the formation of epitaxial Sn-based structures, along with penetration of Sn into the Bi2Te3, with Sn intercalating between the upper 10 Bi2Te3 quintuple layers. Additionally, XPS data show deposited Sn reacting to form SnTe and Bi at the Bi2Te3 surface. The calculated heat of reaction for Sn and Bi2Te3 is consistent with an exothermic reaction to SnTe and Bi. Using thermodynamic calculations as a guide, we identify several candidate substrates that can stabilize the stanene phase.
- Authors:
-
[1];
[2];
[1];
[1];
- Yale Univ., New Haven, CT (United States)
- Univ. of British Columbia, Vancouver, BC (Canada)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); Air Force Research Laboratory (AFRL); US Air Force Office of Scientific Research (AFOSR)
- OSTI Identifier:
- 1797907
- Alternate Identifier(s):
- OSTI ID: 1682370
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 128; Journal Issue: 16; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Chalcogenides; Topological state; interface; Thermodynamic functions; Topological insulator; Heterostructures; Chemical reactions; X-ray photoelectron spectroscopy; Crystal structure; X-ray diffraction; X-ray scattering; Epitaxy
Citation Formats
Albright, Stephen D., Zou, Ke, Lau, Claudia, Eltinge, Stephen, Hong, Hawoong, Ismail-Beigi, Sohrab, Walker, Frederick J., and Ahn, Charles H. Identifying crystal structures and chemical reactions at the interface of stanene on Bi2Te3. United States: N. p., 2020.
Web. doi:10.1063/5.0020168.
Albright, Stephen D., Zou, Ke, Lau, Claudia, Eltinge, Stephen, Hong, Hawoong, Ismail-Beigi, Sohrab, Walker, Frederick J., & Ahn, Charles H. Identifying crystal structures and chemical reactions at the interface of stanene on Bi2Te3. United States. https://doi.org/10.1063/5.0020168
Albright, Stephen D., Zou, Ke, Lau, Claudia, Eltinge, Stephen, Hong, Hawoong, Ismail-Beigi, Sohrab, Walker, Frederick J., and Ahn, Charles H. Wed .
"Identifying crystal structures and chemical reactions at the interface of stanene on Bi2Te3". United States. https://doi.org/10.1063/5.0020168. https://www.osti.gov/servlets/purl/1797907.
@article{osti_1797907,
title = {Identifying crystal structures and chemical reactions at the interface of stanene on Bi2Te3},
author = {Albright, Stephen D. and Zou, Ke and Lau, Claudia and Eltinge, Stephen and Hong, Hawoong and Ismail-Beigi, Sohrab and Walker, Frederick J. and Ahn, Charles H.},
abstractNote = {Synthesizing monolayers and heterostructures is an enabling approach to extract new physical phenomena from bulk materials. Among the structures amenable to this approach is stanene, which is a monolayer of tin, similar to graphene, and has been predicted to host one-dimensional topological states at its edges. Stanene can be tuned by decorating with different adatoms, which makes it a promising platform on which to engineer topological devices. Here, we deposit Sn on Bi2Te3 and characterize the growth using anomalous synchrotron x-ray scattering and x-ray photoelectron spectroscopy (XPS). X-ray diffraction data reveal the formation of epitaxial Sn-based structures, along with penetration of Sn into the Bi2Te3, with Sn intercalating between the upper 10 Bi2Te3 quintuple layers. Additionally, XPS data show deposited Sn reacting to form SnTe and Bi at the Bi2Te3 surface. The calculated heat of reaction for Sn and Bi2Te3 is consistent with an exothermic reaction to SnTe and Bi. Using thermodynamic calculations as a guide, we identify several candidate substrates that can stabilize the stanene phase.},
doi = {10.1063/5.0020168},
journal = {Journal of Applied Physics},
number = 16,
volume = 128,
place = {United States},
year = {Wed Oct 28 00:00:00 EDT 2020},
month = {Wed Oct 28 00:00:00 EDT 2020}
}
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Works referenced in this record:
Surface phase transition and interface interaction in the α-Sn/InSb{111} system
journal, September 1994
- Osaka, T.; Omi, H.; Yamamoto, K.
- Physical Review B, Vol. 50, Issue 11
Chiral transport along magnetic domain walls in the quantum anomalous Hall effect
journal, December 2017
- Rosen, Ilan T.; Fox, Eli J.; Kou, Xufeng
- npj Quantum Materials, Vol. 2, Issue 1
Stanene on a SiC(0001) surface: a candidate for realizing quantum anomalous Hall effect
journal, January 2019
- Li, Ping
- Physical Chemistry Chemical Physics, Vol. 21, Issue 21
Strained-layer growth and islanding of germanium on Si(111)-(7 × 7) studied with STM
journal, June 1991
- Köhler, U.; Jusko, O.; Pietsch, G.
- Surface Science, Vol. 248, Issue 3
Quantum Spin Hall Insulator State in HgTe Quantum Wells
journal, November 2007
- Konig, M.; Wiedmann, S.; Brune, C.
- Science, Vol. 318, Issue 5851, p. 766-770
Epitaxial growth of honeycomb-like stanene on Au(111)
journal, July 2020
- Pang, Wenhui; Nishino, Kazuki; Ogikubo, Tsuyoshi
- Applied Surface Science, Vol. 517
Stable two-dimensional dumbbell stanene: A quantum spin Hall insulator
journal, September 2014
- Tang, Peizhe; Chen, Pengcheng; Cao, Wendong
- Physical Review B, Vol. 90, Issue 12
The N 6,7 O 4,5 O 4.5 Auger spectra of thallium, lead and bismuth
journal, September 1977
- McGilp, J. F.; Weightman, P.; McGuire, E. J.
- Journal of Physics C: Solid State Physics, Vol. 10, Issue 17
Epitaxial growth of ultraflat stanene with topological band inversion
journal, November 2018
- Deng, Jialiang; Xia, Bingyu; Ma, Xiaochuan
- Nature Materials, Vol. 17, Issue 12
Superconductivity above 100 K in single-layer FeSe films on doped SrTiO3
journal, November 2014
- Ge, Jian-Feng; Liu, Zhi-Long; Liu, Canhua
- Nature Materials, Vol. 14, Issue 3
Epitaxial growth and interfacial structure of Sn on Si()-(7×7)
journal, May 2002
- Roldan Cuenya, B.; Doi, M.; Keune, W.
- Surface Science, Vol. 506, Issue 1-2
Anisotropic Electronic Structure and Interfacial Chemical Reaction of Stanene/Bi 2 Te 3
journal, January 2020
- Li, Jinmei; Lei, Tao; Wang, Jiaou
- The Journal of Physical Chemistry C, Vol. 124, Issue 8
Two- and one-dimensional quantum spin Hall states in stanene-functionalized GaTe and InTe matrices
journal, January 2019
- Menshchikova, T. V.; Rusinov, I. P.; Golub, P.
- Journal of Materials Chemistry C, Vol. 7, Issue 26
Chiral Majorana fermion modes in a quantum anomalous Hall insulator–superconductor structure
journal, July 2017
- He, Qing Lin; Pan, Lei; Stern, Alexander L.
- Science, Vol. 357, Issue 6348
Revealing surface-state transport in ultrathin topological crystalline insulator SnTe films
journal, May 2019
- Zou, Ke; Albright, Stephen D.; Dagdeviren, Omur E.
- APL Materials, Vol. 7, Issue 5
Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide
journal, July 2001
- McKee, R. A.
- Science, Vol. 293, Issue 5529
Possibility of realizing quantum spin Hall effect at room temperature in
journal, July 2016
- Wang, Hui; Pi, S. T.; Kim, J.
- Physical Review B, Vol. 94, Issue 3
Large area planar stanene epitaxially grown on Ag(1 1 1)
journal, January 2018
- Yuhara, Junji; Fujii, Yuya; Nishino, Kazuki
- 2D Materials, Vol. 5, Issue 2
Effects of Bi Irradiation on the Molecular Beam Epitaxy Growth of GaSb on Ge (111) Vicinal Substrates
journal, August 2019
- Kajikawa, Yasutomo; Nishigaichi, Makoto; Inoue, Masahiro
- physica status solidi (a), Vol. 217, Issue 3
In-plane crystal field constrained electronic structure of stanene
journal, March 2020
- Li, Jinmei; Lei, Tao; Wang, Jiaou
- Applied Physics Letters, Vol. 116, Issue 10
Ultrahigh electron mobility in suspended graphene
journal, June 2008
- Bolotin, K. I.; Sikes, K. J.; Jiang, Z.
- Solid State Communications, Vol. 146, Issue 9-10, p. 351-355
Growth of thin Sn films on Ag(111) studied with low-energy electron diffraction and X-ray photoelectron spectroscopy
journal, July 2019
- Luh, Dah-An; Wang, Chia-Hsin; Yang, Yaw-Wen
- Thin Solid Films, Vol. 682
Epitaxial growth of two-dimensional stanene
journal, August 2015
- Zhu, Feng-feng; Chen, Wei-jiong; Xu, Yong
- Nature Materials, Vol. 14, Issue 10
Type-II Ising pairing in few-layer stanene
journal, March 2020
- Falson, Joseph; Xu, Yong; Liao, Menghan
- Science, Vol. 367, Issue 6485
Nickel-enhanced low-temperature epitaxial growth of silicon
journal, March 2003
- Uchida, Y.; Katsumata, N.; Ishida, K.
- Thin Solid Films, Vol. 427, Issue 1-2
High-speed graphene transistors with a self-aligned nanowire gate
journal, September 2010
- Liao, Lei; Lin, Yung-Chen; Bao, Mingqiang
- Nature, Vol. 467, Issue 7313
Quantized chiral edge conduction on domain walls of a magnetic topological insulator
journal, December 2017
- Yasuda, K.; Mogi, M.; Yoshimi, R.
- Science, Vol. 358, Issue 6368
Tunable electronic properties of van der Waals heterostructures composed of stanene adsorbed on two-dimensional, graphene-like nitrides
journal, April 2019
- Yelgel, Celal
- Journal of Applied Physics, Vol. 125, Issue 15
The effect of Sn intercalation on the superconducting properties of 2H NbSe2
journal, June 2019
- Naik, Subham; Pradhan, Gopal K.; Bhat, Shwetha G.
- Physica C: Superconductivity and its Applications, Vol. 561
Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
journal, October 2011
- Bansal, Namrata; Kim, Yong Seung; Edrey, Eliav
- Thin Solid Films, Vol. 520, Issue 1
X-ray photoelectron spectra and electronic structure of Bi2X3 (X = O, S, Se, Te)
journal, March 1977
- Debies, Thomas P.; Rabalais, J. Wayne
- Chemical Physics, Vol. 20, Issue 2
Film/substrate registry as measured by anomalous x-ray scattering at a reacted, epitaxial Cu/Si(111) interface
journal, November 1991
- Walker, F.; Specht, E.; McKee, R.
- Physical Review Letters, Vol. 67, Issue 20
A new frontier for superconductivity
journal, November 2014
- Bozovic, Ivan; Ahn, Charles
- Nature Physics, Vol. 10, Issue 12
Picoscale structural insight into superconductivity of monolayer FeSe/SrTiO 3
journal, April 2020
- Peng, Rui; Zou, Ke; Han, M. G.
- Science Advances, Vol. 6, Issue 15
Exploring Ag(111) Substrate for Epitaxially Growing Monolayer Stanene: A First-Principles Study
journal, July 2016
- Gao, Junfeng; Zhang, Gang; Zhang, Yong-Wei
- Scientific Reports, Vol. 6, Issue 1
Epitaxial growth of Bi 2 Se 3 topological insulator thin films on Si (111)
journal, May 2011
- He, Liang; Xiu, Faxian; Wang, Yong
- Journal of Applied Physics, Vol. 109, Issue 10
Epitaxial growth and electronic properties of few-layer stanene on InSb (1 1 1)
journal, October 2019
- Zheng, Xiaohu; Zhang, Jian-Feng; Tong, Bingbing
- 2D Materials, Vol. 7, Issue 1
Bi surfactant mediated epitaxy of Ge on Si(111)
journal, April 1999
- Horn-von Hoegen, M.; Meyer zu Heringdorf, F. J.; Kammler, M.
- Thin Solid Films, Vol. 343-344
Superconductivity in an infinite-layer nickelate
journal, August 2019
- Li, Danfeng; Lee, Kyuho; Wang, Bai Yang
- Nature, Vol. 572, Issue 7771
Realization of Strained Stanene by Interface Engineering
journal, March 2019
- Liu, Yani; Gao, Nan; Zhuang, Jincheng
- The Journal of Physical Chemistry Letters, Vol. 10, Issue 7
Strain Engineering of the Band Gap of HgTe Quantum Wells Using Superlattice Virtual Substrates
journal, August 2016
- Leubner, Philipp; Lunczer, Lukas; Brüne, Christoph
- Physical Review Letters, Vol. 117, Issue 8
A Perspective on Recent Advances in 2D Stanene Nanosheets
journal, August 2019
- Sahoo, Sumanta Kumar; Wei, Kung‐Hwa
- Advanced Materials Interfaces, Vol. 6, Issue 18
Role of double layers at the interface of FeSe/ superconductors
journal, May 2016
- Zou, Ke; Mandal, Subhasish; Albright, Stephen D.
- Physical Review B, Vol. 93, Issue 18
Large-Gap Quantum Spin Hall Insulators in Tin Films
journal, September 2013
- Xu, Yong; Yan, Binghai; Zhang, Hai-Jun
- Physical Review Letters, Vol. 111, Issue 13
Superconductivity in few-layer stanene
journal, January 2018
- Liao, Menghan; Zang, Yunyi; Guan, Zhaoyong
- Nature Physics, Vol. 14, Issue 4
Quantum spin Hall effect in two-dimensional transition metal dichalcogenides
journal, November 2014
- Qian, X.; Liu, J.; Fu, L.
- Science, Vol. 346, Issue 6215
Spin-filtered edge states with an electrically tunable gap in a two-dimensional topological crystalline insulator
journal, December 2013
- Liu, Junwei; Hsieh, Timothy H.; Wei, Peng
- Nature Materials, Vol. 13, Issue 2
Bond ionicity and structural stability of some average-valence-five materials studied by x-ray photoemission
journal, February 1977
- Shalvoy, R. B.; Fisher, G. B.; Stiles, P. J.
- Physical Review B, Vol. 15, Issue 4
Elemental Topological Insulator with Tunable Fermi Level: Strained -Sn on InSb(001)
journal, October 2013
- Barfuss, A.; Dudy, L.; Scholz, M. R.
- Physical Review Letters, Vol. 111, Issue 15
High-temperature superconductivity in iron pnictides and chalcogenides
journal, March 2016
- Si, Qimiao; Yu, Rong; Abrahams, Elihu
- Nature Reviews Materials, Vol. 1, Issue 4
Morphology and Electronic Structure of Sn-Intercalated TiS 2 (0001) Layers
journal, August 2019
- Yuhara, Junji; Isobe, Naoki; Nishino, Kazuki
- The Journal of Physical Chemistry C, Vol. 123, Issue 36
Large-gap quantum spin Hall states in decorated stanene grown on a substrate
journal, August 2015
- Xu, Yong; Tang, Peizhe; Zhang, Shou-Cheng
- Physical Review B, Vol. 92, Issue 8
Single-layer MoS2 transistors
journal, January 2011
- Radisavljevic, B.; Radenovic, A.; Brivio, J.
- Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
Quantum spin Hall state in monolayer 1T'-WTe2
journal, June 2017
- Tang, Shujie; Zhang, Chaofan; Wong, Dillon
- Nature Physics, Vol. 13, Issue 7