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Title: Effect of annealing temperature on structure and electrical properties of topological insulator Bi{sub 2}Te{sub 3}

Abstract

Bi{sub 2}Te{sub 3} samples were prepared by precipitation method. The samples were annealed in evacuated quartz tubes and were treated at different temperature for different duration of time. Effects of annealing temperature and time on the structure of Bi{sub 2}Te{sub 3} were studied in detail. The Bi{sub 2}Te{sub 3} samples annealed at temperature 300°C and 450°C for 48Hrs, 72Hrs and 96Hrs were selected for the present study. The structure of Bi{sub 2}Te{sub 3} and related phases were investigated by the X-ray powder diffraction technique. Morphology and chemical compositions of the samples were investigated by scanning electron microscope and energy dispersive X-ray spectroscopy respectively. All the samples were indexed in rhombohedral crystal structure, with a space group R-3m. The structure consists of repeated quintuple layers of atoms, Te2-Bi-Te1-Bi-Te2 stacking along the z-axis of the unit cell. Electrical properties of the sample annealed at 300°C for 96Hrs was evaluated by measurements of the electrical resistivity and magnetoresistance. The magnetoresistance data at low temperature (1.5 to 50 K) were analyzed to investigate weak antilocalization (WAL) effect. MR data followed the Hikami–Larkin–Nagaoka (HLN) equation with a fit parameter α close to −1 as expected for topological surface states at 1.5 K, but for other temperatures themore » small oscillations were observed which may be due to the phenomena like Shubnikov-de Hass effect.« less

Authors:
;  [1]
  1. X-ray Research Laboratory, Department of Physics, Rashtrasant Tukadoji Maharaj Nagpur University, Nagpur-440033 (India)
Publication Date:
OSTI Identifier:
22591351
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1728; Journal Issue: 1; Conference: ICC 2015: International conference on condensed matter and applied physics, Bikaner (India), 30-31 Oct 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; BISMUTH TELLURIDES; CHEMICAL COMPOSITION; CRYSTALS; LAYERS; MAGNETORESISTANCE; MORPHOLOGY; POWDERS; PRECIPITATION; QUARTZ; SCANNING ELECTRON MICROSCOPY; SHUBNIKOV-DE HAAS EFFECT; SURFACES; TEMPERATURE DEPENDENCE; TRIGONAL LATTICES; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY

Citation Formats

Urkude, R. R., E-mail: rajashriurkude@gmail.com, and Palikundwar, U. A., E-mail: uapali@yahoo.com. Effect of annealing temperature on structure and electrical properties of topological insulator Bi{sub 2}Te{sub 3}. United States: N. p., 2016. Web. doi:10.1063/1.4946262.
Urkude, R. R., E-mail: rajashriurkude@gmail.com, & Palikundwar, U. A., E-mail: uapali@yahoo.com. Effect of annealing temperature on structure and electrical properties of topological insulator Bi{sub 2}Te{sub 3}. United States. https://doi.org/10.1063/1.4946262
Urkude, R. R., E-mail: rajashriurkude@gmail.com, and Palikundwar, U. A., E-mail: uapali@yahoo.com. 2016. "Effect of annealing temperature on structure and electrical properties of topological insulator Bi{sub 2}Te{sub 3}". United States. https://doi.org/10.1063/1.4946262.
@article{osti_22591351,
title = {Effect of annealing temperature on structure and electrical properties of topological insulator Bi{sub 2}Te{sub 3}},
author = {Urkude, R. R., E-mail: rajashriurkude@gmail.com and Palikundwar, U. A., E-mail: uapali@yahoo.com},
abstractNote = {Bi{sub 2}Te{sub 3} samples were prepared by precipitation method. The samples were annealed in evacuated quartz tubes and were treated at different temperature for different duration of time. Effects of annealing temperature and time on the structure of Bi{sub 2}Te{sub 3} were studied in detail. The Bi{sub 2}Te{sub 3} samples annealed at temperature 300°C and 450°C for 48Hrs, 72Hrs and 96Hrs were selected for the present study. The structure of Bi{sub 2}Te{sub 3} and related phases were investigated by the X-ray powder diffraction technique. Morphology and chemical compositions of the samples were investigated by scanning electron microscope and energy dispersive X-ray spectroscopy respectively. All the samples were indexed in rhombohedral crystal structure, with a space group R-3m. The structure consists of repeated quintuple layers of atoms, Te2-Bi-Te1-Bi-Te2 stacking along the z-axis of the unit cell. Electrical properties of the sample annealed at 300°C for 96Hrs was evaluated by measurements of the electrical resistivity and magnetoresistance. The magnetoresistance data at low temperature (1.5 to 50 K) were analyzed to investigate weak antilocalization (WAL) effect. MR data followed the Hikami–Larkin–Nagaoka (HLN) equation with a fit parameter α close to −1 as expected for topological surface states at 1.5 K, but for other temperatures the small oscillations were observed which may be due to the phenomena like Shubnikov-de Hass effect.},
doi = {10.1063/1.4946262},
url = {https://www.osti.gov/biblio/22591351}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1728,
place = {United States},
year = {2016},
month = {5}
}