skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Growth and characterization of molecular beam epitaxy-grown Bi{sub 2}Te{sub 3−x}Se{sub x} topological insulator alloys

Abstract

We report a systematic study on the structural and electronic properties of Bi{sub 2}Te{sub 3−x}Se{sub x} topological insulator alloy grown by molecular beam epitaxy (MBE). A mixing ratio of Bi{sub 2}Se{sub 3} to Bi{sub 2}Te{sub 3} was controlled by varying the Bi:Te:Se flux ratio. X-ray diffraction and Raman spectroscopy measurements indicate the high crystalline quality for the as-grown Bi{sub 2}Te{sub 3−x}Se{sub x} films. Substitution of Te by Se is also revealed from both analyses. The surfaces of the films exhibit terrace-like quintuple layers and their size of the characteristic triangular terraces decreases monotonically with increasing Se content. However, the triangular terrace structure gradually recovers as the Se content further increases. Most importantly, the angle-resolved photoemission spectroscopy results provide evidence of single-Dirac-cone like surface states in which Bi{sub 2}Te{sub 3−x}Se{sub x} with Se/Te-substitution leads to tunable surface states. Our results demonstrate that by fine-tuned MBE growth conditions, Bi{sub 2}Te{sub 3−x}Se{sub x} thin film alloys with tunable topological surface states can be obtained, providing an excellent platform for exploring the novel device applications based on this compound.

Authors:
; ; ;  [1];  [1]; ;  [2]; ;  [3]
  1. Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China)
  2. National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China)
  3. School of Electronic Science and Applied Physics, HeFei University of Technology, Anhui (China)
Publication Date:
OSTI Identifier:
22494985
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALLOYS; BISMUTH SELENIDES; BISMUTH TELLURIDES; MOLECULAR BEAM EPITAXY; PHOTOELECTRON SPECTROSCOPY; RAMAN SPECTROSCOPY; SURFACES; THIN FILMS; TOPOLOGY; X-RAY DIFFRACTION

Citation Formats

Tung, Y., Chiang, Y. F., Chong, C. W., E-mail: cheongwei2000@yahoo.com, E-mail: jcahuang@mail.ncku.edu.tw, E-mail: makalu@nsrrc.org.tw, Deng, Z. X., Chen, Y. C., Huang, J. C. A.,, Advanced Optoelectronic Technology Center, Taiwan Consortium of Emergent Crystalline Materials, Cheng, C.-M., E-mail: cheongwei2000@yahoo.com, E-mail: jcahuang@mail.ncku.edu.tw, E-mail: makalu@nsrrc.org.tw, Pi, T. -W., Tsuei, K. -D., Li, Z., and Qiu, H. Growth and characterization of molecular beam epitaxy-grown Bi{sub 2}Te{sub 3−x}Se{sub x} topological insulator alloys. United States: N. p., 2016. Web. doi:10.1063/1.4941018.
Tung, Y., Chiang, Y. F., Chong, C. W., E-mail: cheongwei2000@yahoo.com, E-mail: jcahuang@mail.ncku.edu.tw, E-mail: makalu@nsrrc.org.tw, Deng, Z. X., Chen, Y. C., Huang, J. C. A.,, Advanced Optoelectronic Technology Center, Taiwan Consortium of Emergent Crystalline Materials, Cheng, C.-M., E-mail: cheongwei2000@yahoo.com, E-mail: jcahuang@mail.ncku.edu.tw, E-mail: makalu@nsrrc.org.tw, Pi, T. -W., Tsuei, K. -D., Li, Z., & Qiu, H. Growth and characterization of molecular beam epitaxy-grown Bi{sub 2}Te{sub 3−x}Se{sub x} topological insulator alloys. United States. doi:10.1063/1.4941018.
Tung, Y., Chiang, Y. F., Chong, C. W., E-mail: cheongwei2000@yahoo.com, E-mail: jcahuang@mail.ncku.edu.tw, E-mail: makalu@nsrrc.org.tw, Deng, Z. X., Chen, Y. C., Huang, J. C. A.,, Advanced Optoelectronic Technology Center, Taiwan Consortium of Emergent Crystalline Materials, Cheng, C.-M., E-mail: cheongwei2000@yahoo.com, E-mail: jcahuang@mail.ncku.edu.tw, E-mail: makalu@nsrrc.org.tw, Pi, T. -W., Tsuei, K. -D., Li, Z., and Qiu, H. Sun . "Growth and characterization of molecular beam epitaxy-grown Bi{sub 2}Te{sub 3−x}Se{sub x} topological insulator alloys". United States. doi:10.1063/1.4941018.
@article{osti_22494985,
title = {Growth and characterization of molecular beam epitaxy-grown Bi{sub 2}Te{sub 3−x}Se{sub x} topological insulator alloys},
author = {Tung, Y. and Chiang, Y. F. and Chong, C. W., E-mail: cheongwei2000@yahoo.com, E-mail: jcahuang@mail.ncku.edu.tw, E-mail: makalu@nsrrc.org.tw and Deng, Z. X. and Chen, Y. C. and Huang, J. C. A., and Advanced Optoelectronic Technology Center and Taiwan Consortium of Emergent Crystalline Materials and Cheng, C.-M., E-mail: cheongwei2000@yahoo.com, E-mail: jcahuang@mail.ncku.edu.tw, E-mail: makalu@nsrrc.org.tw and Pi, T. -W. and Tsuei, K. -D. and Li, Z. and Qiu, H.},
abstractNote = {We report a systematic study on the structural and electronic properties of Bi{sub 2}Te{sub 3−x}Se{sub x} topological insulator alloy grown by molecular beam epitaxy (MBE). A mixing ratio of Bi{sub 2}Se{sub 3} to Bi{sub 2}Te{sub 3} was controlled by varying the Bi:Te:Se flux ratio. X-ray diffraction and Raman spectroscopy measurements indicate the high crystalline quality for the as-grown Bi{sub 2}Te{sub 3−x}Se{sub x} films. Substitution of Te by Se is also revealed from both analyses. The surfaces of the films exhibit terrace-like quintuple layers and their size of the characteristic triangular terraces decreases monotonically with increasing Se content. However, the triangular terrace structure gradually recovers as the Se content further increases. Most importantly, the angle-resolved photoemission spectroscopy results provide evidence of single-Dirac-cone like surface states in which Bi{sub 2}Te{sub 3−x}Se{sub x} with Se/Te-substitution leads to tunable surface states. Our results demonstrate that by fine-tuned MBE growth conditions, Bi{sub 2}Te{sub 3−x}Se{sub x} thin film alloys with tunable topological surface states can be obtained, providing an excellent platform for exploring the novel device applications based on this compound.},
doi = {10.1063/1.4941018},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 5,
volume = 119,
place = {United States},
year = {2016},
month = {2}
}