Off-stoichiometric semiconductors Cu1.33+xZn1.33-xIn1.33Se4 (x = 0, 0.1, 0.2 and 0.3): Synthesis, structure, and thermal and electrical properties

Nolas, George S.; Poddig, Hagen; Shi, Wencong; Woods, Lilia M.; Martin, Joshua; Wang, Hsin

doi:10.1016/j.jssc.2021.122058

Title: Off-stoichiometric semiconductors Cu_1.33+xZn_1.33-xIn_1.33Se₄ (x = 0, 0.1, 0.2 and 0.3): Synthesis, structure, and thermal and electrical properties

Abstract

The synthesis, structure, and temperature dependent thermal and electrical properties of off-stoichiometric polycrystalline modified zinc blende quaternary chalcogenides Cu_1.33+xZn_1.33-xIn_1.33Se₄, where x = 0, 0.1, 0.2 and 0.3, are investigated. Temperature-dependent electrical properties reveal these compositions to be semiconductors with alteration of the carrier concentration and electrical transport via stoichiometric variation. The thermal conductivity is low for all specimens and intrinsic to these materials. First principles calculations are also reported in establishing a fundamental investigation that illustrates the large variation in stoichiometry that is possible in these materials. This stoichiometric variation results in the observed variation of the transport properties. Overall, the results presented reveal fundamental structure-property relationships in these quaternary chalcogenides, and provides a basis for further research into the viability for large stoichiometric variation in other materials that are of interest for technological applications.

Authors:

Nolas, George S. ^[1]; Poddig, Hagen ^[2];

^[1]; Woods, Lilia M. ^[1]; Martin, Joshua ^[3];

^[4]

Univ. of South Florida, Tampa, FL (United States)
Univ. of South Florida, Tampa, FL (United States); Dresden Univ. of Technology (Germany)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States). Material Measurement Lab.
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Publication Date:: Sat Feb 13 00:00:00 EST 2021

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Transportation Office. Vehicle Technologies Office

OSTI Identifier:: 1772612

Grant/Contract Number:: AC05-00OR22725; DMR-1748188

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Solid State Chemistry

Additional Journal Information:: Journal Volume: 297; Journal Issue: N/A; Journal ID: ISSN 0022-4596

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats


                    Nolas, George S., Poddig, Hagen, Shi, Wencong, Woods, Lilia M., Martin, Joshua, and Wang, Hsin. Off-stoichiometric semiconductors Cu1.33+xZn1.33-xIn1.33Se4 (x = 0, 0.1, 0.2 and 0.3): Synthesis, structure, and thermal and electrical properties.  United States: N. p., 2021. 
Web.  doi:10.1016/j.jssc.2021.122058.

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                    Nolas, George S., Poddig, Hagen, Shi, Wencong, Woods, Lilia M., Martin, Joshua, & Wang, Hsin. Off-stoichiometric semiconductors Cu1.33+xZn1.33-xIn1.33Se4 (x = 0, 0.1, 0.2 and 0.3): Synthesis, structure, and thermal and electrical properties.  United States.  https://doi.org/10.1016/j.jssc.2021.122058

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                    Nolas, George S., Poddig, Hagen, Shi, Wencong, Woods, Lilia M., Martin, Joshua, and Wang, Hsin. Sat .  
"Off-stoichiometric semiconductors Cu1.33+xZn1.33-xIn1.33Se4 (x = 0, 0.1, 0.2 and 0.3): Synthesis, structure, and thermal and electrical properties".  United States.  https://doi.org/10.1016/j.jssc.2021.122058.  https://www.osti.gov/servlets/purl/1772612.

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@article{osti_1772612,

  title        = {Off-stoichiometric semiconductors Cu1.33+xZn1.33-xIn1.33Se4 (x = 0, 0.1, 0.2 and 0.3): Synthesis, structure, and thermal and electrical properties},

  author       = {Nolas, George S. and Poddig, Hagen and Shi, Wencong and Woods, Lilia M. and Martin, Joshua and Wang, Hsin},

  abstractNote = {The synthesis, structure, and temperature dependent thermal and electrical properties of off-stoichiometric polycrystalline modified zinc blende quaternary chalcogenides Cu1.33+xZn1.33-xIn1.33Se4, where x = 0, 0.1, 0.2 and 0.3, are investigated. Temperature-dependent electrical properties reveal these compositions to be semiconductors with alteration of the carrier concentration and electrical transport via stoichiometric variation. The thermal conductivity is low for all specimens and intrinsic to these materials. First principles calculations are also reported in establishing a fundamental investigation that illustrates the large variation in stoichiometry that is possible in these materials. This stoichiometric variation results in the observed variation of the transport properties. Overall, the results presented reveal fundamental structure-property relationships in these quaternary chalcogenides, and provides a basis for further research into the viability for large stoichiometric variation in other materials that are of interest for technological applications.},

  doi          = {10.1016/j.jssc.2021.122058},

  journal      = {Journal of Solid State Chemistry},

  number       = N/A,

  volume       = 297,

  place        = {United States},

  year         = {Sat Feb 13 00:00:00 EST 2021},

  month        = {Sat Feb 13 00:00:00 EST 2021}

}

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Title: Off-stoichiometric semiconductors Cu1.33+xZn1.33-xIn1.33Se4 (x = 0, 0.1, 0.2 and 0.3): Synthesis, structure, and thermal and electrical properties

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