Controlled Nucleation and Stabilization of Ferroelectric Domain Wall Patterns in Epitaxial (110) Bismuth Ferrite Heterostructures
Abstract
Abstract Ferroelectric domain walls, topological entities separating domains of uniform polarization, are promising candidates as active elements for nanoscale memories. In such applications, controlled nucleation and stabilization of domain walls are critical. Here, using in situ transmission electron microscopy and phase‐field simulations, a controlled nucleation of vertically oriented 109° domain walls in (110)‐oriented BiFeO 3 (BFO) thin films is reported. In the switching experiment, reversed domains that are nucleated preferentially at the nanoscale edges of the “crest and sag” pattern‐like electrode under external bias subsequently grow into a stable stripe configuration. In addition, when triangular pockets (with an in‐plane polarization component) are present, these domain walls are pinned to form stable flux‐closure domains. Phase field simulations show that i) field enhancement at the edges of the electrode causes site‐specific domain nucleation, and ii) the local electrostatics at the domain walls drives the formation of flux closure domains, thus stabilizing the striped pattern, irrespective of the initial configuration. The results demonstrate how flux closure pinning can be exploited in conjunction with electrode patterning and substrate orientation to achieve a desired topological defect configuration. These insights constitute critical advancements in exploiting domain walls in next generation ferroelectronic devices.
- Authors:
-
[4]
- Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of New South Wales, Sydney, NSW (Australia)
- Pennsylvania State Univ., University Park, PA (United States)
- Univ. of New South Wales, Sydney, NSW (Australia)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; Australian Research Council (ARC); Australian Government; National Science Foundation (NSF); USDOE
- OSTI Identifier:
- 1670671
- Alternate Identifier(s):
- OSTI ID: 1724258
- Report Number(s):
- BNL-219925-2020-JAAM
Journal ID: ISSN 1616-301X; TRN: US2203869
- Grant/Contract Number:
- SC0012704; CE170100039; DMR‐1420620; DMR‐1744213
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Functional Materials
- Additional Journal Information:
- Journal Volume: 30; Journal Issue: 48; Journal ID: ISSN 1616-301X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; domain walls; interface engineering; orientation; flux closure; in-situ TEM
Citation Formats
Zhang, Yangyang, Tan, Yueze, Sando, Daniel, Chen, Long‐Qing, Valanoor, Nagarajan, Zhu, Yimei, and Han, Myung‐Geun. Controlled Nucleation and Stabilization of Ferroelectric Domain Wall Patterns in Epitaxial (110) Bismuth Ferrite Heterostructures. United States: N. p., 2020.
Web. doi:10.1002/adfm.202003571.
Zhang, Yangyang, Tan, Yueze, Sando, Daniel, Chen, Long‐Qing, Valanoor, Nagarajan, Zhu, Yimei, & Han, Myung‐Geun. Controlled Nucleation and Stabilization of Ferroelectric Domain Wall Patterns in Epitaxial (110) Bismuth Ferrite Heterostructures. United States. https://doi.org/10.1002/adfm.202003571
Zhang, Yangyang, Tan, Yueze, Sando, Daniel, Chen, Long‐Qing, Valanoor, Nagarajan, Zhu, Yimei, and Han, Myung‐Geun. Wed .
"Controlled Nucleation and Stabilization of Ferroelectric Domain Wall Patterns in Epitaxial (110) Bismuth Ferrite Heterostructures". United States. https://doi.org/10.1002/adfm.202003571. https://www.osti.gov/servlets/purl/1670671.
@article{osti_1670671,
title = {Controlled Nucleation and Stabilization of Ferroelectric Domain Wall Patterns in Epitaxial (110) Bismuth Ferrite Heterostructures},
author = {Zhang, Yangyang and Tan, Yueze and Sando, Daniel and Chen, Long‐Qing and Valanoor, Nagarajan and Zhu, Yimei and Han, Myung‐Geun},
abstractNote = {Abstract Ferroelectric domain walls, topological entities separating domains of uniform polarization, are promising candidates as active elements for nanoscale memories. In such applications, controlled nucleation and stabilization of domain walls are critical. Here, using in situ transmission electron microscopy and phase‐field simulations, a controlled nucleation of vertically oriented 109° domain walls in (110)‐oriented BiFeO 3 (BFO) thin films is reported. In the switching experiment, reversed domains that are nucleated preferentially at the nanoscale edges of the “crest and sag” pattern‐like electrode under external bias subsequently grow into a stable stripe configuration. In addition, when triangular pockets (with an in‐plane polarization component) are present, these domain walls are pinned to form stable flux‐closure domains. Phase field simulations show that i) field enhancement at the edges of the electrode causes site‐specific domain nucleation, and ii) the local electrostatics at the domain walls drives the formation of flux closure domains, thus stabilizing the striped pattern, irrespective of the initial configuration. The results demonstrate how flux closure pinning can be exploited in conjunction with electrode patterning and substrate orientation to achieve a desired topological defect configuration. These insights constitute critical advancements in exploiting domain walls in next generation ferroelectronic devices.},
doi = {10.1002/adfm.202003571},
journal = {Advanced Functional Materials},
number = 48,
volume = 30,
place = {United States},
year = {Wed Sep 16 00:00:00 EDT 2020},
month = {Wed Sep 16 00:00:00 EDT 2020}
}
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