Antiphase-Boundary-Engineered Domain Switching in a (110)-Oriented BiFeO3 Film

Zhang, Yangyang; Han, Myung-Geun; Sando, Daniel; Wu, Lijun; Valanoor, Nagarajan; Zhu, Yimei

doi:10.1021/acsaelm.1c00392

Title: Antiphase-Boundary-Engineered Domain Switching in a (110)-Oriented BiFeO₃ Film

Journal Article · 14 July 2021 · ACS Applied Electronic Materials

DOI: https://doi.org/10.1021/acsaelm.1c00392 · OSTI ID:1817200

Zhang, Yangyang ^[1];

^[2];

^[3]; Wu, Lijun ^[2];

^[3];

^[2]

Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.; Univ. of New South Wales, Sydney, NSW (Australia). School of Materials Science and Engineering
Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
Univ. of New South Wales, Sydney, NSW (Australia). School of Materials Science and Engineering

A ferroelectric domain wall memory device exploits the presence (or absence) of domain walls as the basis for information storage. Although structural defects strongly influence ferroelectric domain wall nucleation and growth, this correlation is far from being fully understood. For example, a single defect can play opposing roles: it can act as a nucleation site to initiate domain switching or, conversely, serve as a pinning center inhibiting domain wall motion. This is particularly the case for antiphase boundaries (APBs), whose influence on switching remains relatively unexplored despite being ubiquitous in oxide perovskite ferroelectrics. Here, we use aberration-corrected scanning transmission microscopy and in situ transmission electron microscopy under an applied bias to extensively characterize the influence of an APB on the switching behavior in a (110)-oriented BiFeO₃ thin film. We demonstrate that deterministic nucleation occurs in the proximity of a vertically oriented APB, following which domain growth occurs laterally in a symmetric fashion. Atomic-scale structural analysis reveals that the shear operation vector for the APB is 1/2[110]; this half-unit-cell shift extends over a few nanometers, implying that the APB plane is inclined toward the imaging direction. The symmetric switching observation is attributed to local inhomogeneous lattice strain and a reduction of polarization caused by the APB. These results demonstrate that an extended structural defect can be used as an active switching element rather than a stumbling block in reprogrammable domain-wall-based devices. Ultimately, this will expand the capabilities of ferroelectric thin films for future electronic devices based on ferroelectric domain walls.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: Australian Research Council (ARC) Centre of Excellence in Future Low-Energy Electgronics Technologies; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1817200

Report Number(s):: BNL-222037-2021-JAAM

Journal Information:: ACS Applied Electronic Materials, Journal Name: ACS Applied Electronic Materials Journal Issue: 7 Vol. 3; ISSN 2637-6113

Publisher:: ACS PublicationsCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Antiphase-Boundary-Engineered Domain Switching in a (110)-Oriented BiFeO3 Film

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Title: Antiphase-Boundary-Engineered Domain Switching in a (110)-Oriented BiFeO₃ Film