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Title: Control of Domain Structures in Multiferroic Thin Films through Defect Engineering

Abstract

Abstract Domain walls (DWs) have become an essential component in nanodevices based on ferroic thin films. The domain configuration and DW stability, however, are strongly dependent on the boundary conditions of thin films, which make it difficult to create complex ordered patterns of DWs. Here, it is shown that novel domain structures, that are otherwise unfavorable under the natural boundary conditions, can be realized by utilizing engineered nanosized structural defects as building blocks for reconfiguring DW patterns. It is directly observed that an array of charged defects, which are located within a monolayer thickness, can be intentionally introduced by slightly changing substrate temperature during the growth of multiferroic BiFeO 3 thin films. These defects are strongly coupled to the domain structures in the pretemperature‐change portion of the BiFeO 3 film and can effectively change the configuration of newly grown domains due to the interaction between the polarization and the defects. Thus, two types of domain patterns are integrated into a single film without breaking the DW periodicity. The potential use of these defects for building complex patterns of conductive DWs is also demonstrated.

Authors:
ORCiD logo [1];  [2];  [1];  [3];  [1];  [4];  [1];  [1];  [4];  [3];  [1]
+ Show Author Affiliations
  1. University of California, Irvine, CA (United States)
  2. University of Michigan, Ann Arbor, MI (United States)
  3. Pennsylvania State University, University Park, PA (United States)
  4. Cornell University, Ithaca, NY (United States)
Publication Date:
Research Org.:
Univ. of California, Irvine, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); USDOE
OSTI Identifier:
1600475
Alternate Identifier(s):
OSTI ID: 1463198
Grant/Contract Number:  
FG02-07ER46417; SC0014430; DMR-1420620; DMR-1506535; OCI0821527; EEC-1160504; ECCS-1542081; DMR-1719875; FG0207ER46417; DE‐SC0014430
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 30; Journal Issue: 38; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; control; thin films; defect engineering; domain structures

Citation Formats

Li, Linze, Jokisaari, Jacob R., Zhang, Yi, Cheng, Xiaoxing, Yan, Xingxu, Heikes, Colin, Lin, Qiyin, Gadre, Chaitanya, Schlom, Darrell G., Chen, Long-Qing, and Pan, Xiaoqing. Control of Domain Structures in Multiferroic Thin Films through Defect Engineering. United States: N. p., 2018. Web. doi:10.1002/adma.201802737.
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Li, Linze, Jokisaari, Jacob R., Zhang, Yi, Cheng, Xiaoxing, Yan, Xingxu, Heikes, Colin, Lin, Qiyin, Gadre, Chaitanya, Schlom, Darrell G., Chen, Long-Qing, & Pan, Xiaoqing. Control of Domain Structures in Multiferroic Thin Films through Defect Engineering. United States. https://doi.org/10.1002/adma.201802737
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Li, Linze, Jokisaari, Jacob R., Zhang, Yi, Cheng, Xiaoxing, Yan, Xingxu, Heikes, Colin, Lin, Qiyin, Gadre, Chaitanya, Schlom, Darrell G., Chen, Long-Qing, and Pan, Xiaoqing. Mon . "Control of Domain Structures in Multiferroic Thin Films through Defect Engineering". United States. https://doi.org/10.1002/adma.201802737. https://www.osti.gov/servlets/purl/1600475.
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@article{osti_1600475,
title = {Control of Domain Structures in Multiferroic Thin Films through Defect Engineering},
author = {Li, Linze and Jokisaari, Jacob R. and Zhang, Yi and Cheng, Xiaoxing and Yan, Xingxu and Heikes, Colin and Lin, Qiyin and Gadre, Chaitanya and Schlom, Darrell G. and Chen, Long-Qing and Pan, Xiaoqing},
abstractNote = {Abstract Domain walls (DWs) have become an essential component in nanodevices based on ferroic thin films. The domain configuration and DW stability, however, are strongly dependent on the boundary conditions of thin films, which make it difficult to create complex ordered patterns of DWs. Here, it is shown that novel domain structures, that are otherwise unfavorable under the natural boundary conditions, can be realized by utilizing engineered nanosized structural defects as building blocks for reconfiguring DW patterns. It is directly observed that an array of charged defects, which are located within a monolayer thickness, can be intentionally introduced by slightly changing substrate temperature during the growth of multiferroic BiFeO 3 thin films. These defects are strongly coupled to the domain structures in the pretemperature‐change portion of the BiFeO 3 film and can effectively change the configuration of newly grown domains due to the interaction between the polarization and the defects. Thus, two types of domain patterns are integrated into a single film without breaking the DW periodicity. The potential use of these defects for building complex patterns of conductive DWs is also demonstrated.},
doi = {10.1002/adma.201802737},
journal = {Advanced Materials},
number = 38,
volume = 30,
place = {United States},
year = {Mon Aug 06 00:00:00 EDT 2018},
month = {Mon Aug 06 00:00:00 EDT 2018}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1002/adma.201802737
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Cited by: 30 works
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Figures / Tables:

Figure 1 Figure 1: Domain structures in BiFeO3 thin films. a, Left, atomic model of BiFeO3 pseudocubic structure (left), polarization is shown by the green arrow. Right, 71° and 109° domain patterns in BFO thin films. Polarizations are shown by white arrows. b, Cross-sectional bright-field TEM image and corresponding schematic of polarizationmore » structures showing ordered 71° and 109° domains separated by an array of defects in a 400 nm BiFeO3 film. c, PFM phase image showing the same periodically ordered domain patterns in the same BiFeO3 film.« less
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    Works referencing / citing this record:

    Design and Manipulation of Ferroic Domains in Complex Oxide Heterostructures
    text, January 2019

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