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Title: Structures and electronic properties of domain walls in BiFeO3 thin films

Abstract

Abstract Domain walls (DWs) in ferroelectrics are atomically sharp and can be created, erased, and reconfigured within the same physical volume of ferroelectric matrix by external electric fields. They possess a myriad of novel properties and functionalities that are absent in the bulk of the domains, and thus could become an essential element in next-generation nanodevices based on ferroelectrics. The knowledge about the structure and properties of ferroelectric DWs not only advances the fundamental understanding of ferroelectrics, but also provides guidance for the design of ferroelectric-based devices. In this article, we provide a review of structures and properties of DWs in one of the most widely studied ferroelectric systems, BiFeO3 thin films. We correlate their conductivity and photovoltaic properties to the atomic-scale structure and dynamic behaviors of DWs.

Authors:
 [1];  [1];  [2];  [1];  [3]
  1. Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA
  2. Department of Physics and Astronomy, University of California, Irvine, CA 92697, USA
  3. Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA, Department of Physics and Astronomy, University of California, Irvine, CA 92697, USA, Irvine Materials Research Institute, University of California, Irvine, CA 92697, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1562604
Alternate Identifier(s):
OSTI ID: 1545176
Grant/Contract Number:  
SC0014430
Resource Type:
Published Article
Journal Name:
National Science Review
Additional Journal Information:
Journal Name: National Science Review Journal Volume: 6 Journal Issue: 4; Journal ID: ISSN 2095-5138
Publisher:
Oxford University Press
Country of Publication:
China
Language:
English

Citation Formats

Huyan, Huaixun, Li, Linze, Addiego, Christopher, Gao, Wenpei, and Pan, Xiaoqing. Structures and electronic properties of domain walls in BiFeO3 thin films. China: N. p., 2019. Web. doi:10.1093/nsr/nwz101.
Huyan, Huaixun, Li, Linze, Addiego, Christopher, Gao, Wenpei, & Pan, Xiaoqing. Structures and electronic properties of domain walls in BiFeO3 thin films. China. doi:10.1093/nsr/nwz101.
Huyan, Huaixun, Li, Linze, Addiego, Christopher, Gao, Wenpei, and Pan, Xiaoqing. Wed . "Structures and electronic properties of domain walls in BiFeO3 thin films". China. doi:10.1093/nsr/nwz101.
@article{osti_1562604,
title = {Structures and electronic properties of domain walls in BiFeO3 thin films},
author = {Huyan, Huaixun and Li, Linze and Addiego, Christopher and Gao, Wenpei and Pan, Xiaoqing},
abstractNote = {Abstract Domain walls (DWs) in ferroelectrics are atomically sharp and can be created, erased, and reconfigured within the same physical volume of ferroelectric matrix by external electric fields. They possess a myriad of novel properties and functionalities that are absent in the bulk of the domains, and thus could become an essential element in next-generation nanodevices based on ferroelectrics. The knowledge about the structure and properties of ferroelectric DWs not only advances the fundamental understanding of ferroelectrics, but also provides guidance for the design of ferroelectric-based devices. In this article, we provide a review of structures and properties of DWs in one of the most widely studied ferroelectric systems, BiFeO3 thin films. We correlate their conductivity and photovoltaic properties to the atomic-scale structure and dynamic behaviors of DWs.},
doi = {10.1093/nsr/nwz101},
journal = {National Science Review},
number = 4,
volume = 6,
place = {China},
year = {2019},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1093/nsr/nwz101

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