Electron–Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy
Abstract
When surface states (SSs) form in topological insulators (TIs), they inherit the properties of bulk bands, including the electron–hole (e–h) asymmetry but with much more profound impacts. Here via combining magneto-infrared spectroscopy with theoretical analysis, we show that e–h asymmetry significantly modifies the SS electronic structures when interplaying with the quantum confinement effect. Compared with the case without e–h asymmetry, the SSs now bear not only a band asymmetry, such as that in the bulk, but also a shift of the Dirac point relative to the bulk bands and a reduction of the hybridization gap of up to 70%. Here, our results signify the importance of e–h asymmetry in the band engineering of TIs in the thin-film limit.
- Authors:
-
[1];
[1];
[4];
[5];
- National High Magnetic Field Laboratory, Tallahassee, FL (United States)
- University of Alabama, Tuscaloosa, AL (United States)
- University of Pennsylvania, Philadelphia, PA (United States)
- The State University of New Jersey, Piscataway, NJ (United States)
- Georgia Institute of Technology, Atlanta, GA (United States)
- Publication Date:
- Research Org.:
- Univ. of Alabama, Tuscaloosa, AL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Gordon and Betty Moore Foundation
- OSTI Identifier:
- 1658373
- Grant/Contract Number:
- SC0019326; DMR1720530; FG02-07ER46451; GBMF4418; EFMA-1542798
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 20; Journal Issue: 6; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Topological insulator; electron−hole asymmetry; Landau levels; magneto-infrared spectroscopy; quantum confinement effect; thickness; hybridization; colloids; magnetic properties; energy
Citation Formats
Jiang, Yuxuan, Asmar, Mahmoud M., Han, Xingyue, Ozerov, Mykhaylo, Smirnov, Dmitry, Salehi, Maryam, Oh, Seongshik, Jiang, Zhigang, Tse, Wang-Kong, and Wu, Liang. Electron–Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy. United States: N. p., 2020.
Web. doi:10.1021/acs.nanolett.0c01447.
Jiang, Yuxuan, Asmar, Mahmoud M., Han, Xingyue, Ozerov, Mykhaylo, Smirnov, Dmitry, Salehi, Maryam, Oh, Seongshik, Jiang, Zhigang, Tse, Wang-Kong, & Wu, Liang. Electron–Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy. United States. https://doi.org/10.1021/acs.nanolett.0c01447
Jiang, Yuxuan, Asmar, Mahmoud M., Han, Xingyue, Ozerov, Mykhaylo, Smirnov, Dmitry, Salehi, Maryam, Oh, Seongshik, Jiang, Zhigang, Tse, Wang-Kong, and Wu, Liang. Wed .
"Electron–Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy". United States. https://doi.org/10.1021/acs.nanolett.0c01447. https://www.osti.gov/servlets/purl/1658373.
@article{osti_1658373,
title = {Electron–Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy},
author = {Jiang, Yuxuan and Asmar, Mahmoud M. and Han, Xingyue and Ozerov, Mykhaylo and Smirnov, Dmitry and Salehi, Maryam and Oh, Seongshik and Jiang, Zhigang and Tse, Wang-Kong and Wu, Liang},
abstractNote = {When surface states (SSs) form in topological insulators (TIs), they inherit the properties of bulk bands, including the electron–hole (e–h) asymmetry but with much more profound impacts. Here via combining magneto-infrared spectroscopy with theoretical analysis, we show that e–h asymmetry significantly modifies the SS electronic structures when interplaying with the quantum confinement effect. Compared with the case without e–h asymmetry, the SSs now bear not only a band asymmetry, such as that in the bulk, but also a shift of the Dirac point relative to the bulk bands and a reduction of the hybridization gap of up to 70%. Here, our results signify the importance of e–h asymmetry in the band engineering of TIs in the thin-film limit.},
doi = {10.1021/acs.nanolett.0c01447},
journal = {Nano Letters},
number = 6,
volume = 20,
place = {United States},
year = {Wed May 13 00:00:00 EDT 2020},
month = {Wed May 13 00:00:00 EDT 2020}
}
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